Page 1185 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AON7452
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 2.5A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock12,600
NTGS3443BT1G
ON Semiconductor

MOSFET P-CH 20V 2.7A 6-TSOP

Package: SOT-23-6

Stock266,700
FQP22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 22A TO-220

Package: TO-220-3

Stock5,840
FQP5N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 4.5A TO-220

Package: TO-220-3

Stock103,464
ZXMN3A01E6TC
Diodes Incorporated

MOSFET N-CH 30V 2.4A SOT23-6

Package: SOT-23-6

Stock7,552
STB25NM60N
STMicroelectronics

MOSFET N-CH 600V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock102,372
IXFR15N80Q
IXYS

MOSFET N-CH 800V 13A ISOPLUS247

Package: ISOPLUS247?

Stock4,960
IXTY18P10T
IXYS

MOSFET P-CH 100V 18A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,488
TP2640LG-G
Microchip Technology

MOSFET P-CH 400V 0.086A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,744
FCPF11N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO220F

Package: TO-220-3 Full Pack

Stock161,460
NTMFS4936NT3G
ON Semiconductor

MOSFET N-CH 30V 11.6A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,352
IXTK180N15P
IXYS

MOSFET N-CH 150V 180A TO-264

Package: TO-264-3, TO-264AA

Stock2,176
IPI029N06NAKSA1
Infineon Technologies

MOSFET N-CH 60V 24A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,876
IRFZ40PBF
Vishay Siliconix

MOSFET N-CH 60V 50A TO220AB

Package: TO-220-3

Stock8,268
IRF3710ZSTRLPBF
Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock39,024
R5011FNX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO-220FM

Package: TO-220-2 Full Pack

Stock8,832
SUM85N15-19-E3
Vishay Siliconix

MOSFET N-CH 150V 85A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock313,128
SI7456DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 5.7A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,632
ZXMN6A09GTA
Diodes Incorporated

MOSFET N-CH 60V 6.9A SOT223

Package: TO-261-4, TO-261AA

Stock89,484
SUD23N06-31-GE3
Vishay Siliconix

MOSFET N-CH 60V 21.4A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock129,168

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AON7452	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 2.5A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock12,600	MOSFET (Metal Oxide)	100V	2.5A (Ta), 5.5A (Tc)	7V, 10V	4.7V @ 250µA	4nC @ 10V	185pF @ 50V	±25V	-	3.1W (Ta), 17W (Tc)	310 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
NTGS3443BT1G	ON Semiconductor	MOSFET P-CH 20V 2.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 819pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock266,700	MOSFET (Metal Oxide)	20V	2.7A (Ta)	2.5V, 4.5V	1.4V @ 250µA	11nC @ 4.5V	819pF @ 10V	±12V	-	700mW (Ta)	60 mOhm @ 3.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
FQP22P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 22A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	50nC @ 10V	1500pF @ 25V	±30V	-	125W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQP5N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	400V	4.5A (Tc)	10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	±30V	-	70W (Tc)	1.6 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZXMN3A01E6TC	Diodes Incorporated	MOSFET N-CH 30V 2.4A SOT23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock7,552	MOSFET (Metal Oxide)	30V	2.4A (Ta)	4.5V, 10V	1V @ 250µA	3.9nC @ 10V	190pF @ 25V	±20V	-	1.1W (Ta)	120 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STB25NM60N	STMicroelectronics	MOSFET N-CH 600V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock102,372	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2400pF @ 50V	±25V	-	160W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFR15N80Q	IXYS	MOSFET N-CH 800V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,960	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	4300pF @ 25V	±20V	-	250W (Tc)	600 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTY18P10T	IXYS	MOSFET P-CH 100V 18A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,488	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4.5V @ 250µA	39nC @ 10V	2100pF @ 25V	±15V	-	83W (Tc)	120 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
TP2640LG-G	Microchip Technology	MOSFET P-CH 400V 0.086A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,744	MOSFET (Metal Oxide)	400V	86mA (Tj)	2.5V, 10V	2V @ 1mA	-	300pF @ 25V	±20V	-	740mW (Ta)	15 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FCPF11N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock161,460	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	36W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTMFS4936NT3G	ON Semiconductor	MOSFET N-CH 30V 11.6A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3044pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,352	MOSFET (Metal Oxide)	30V	11.6A (Ta), 79A (Tc)	4.5V, 10V	2.2V @ 250µA	43nC @ 10V	3044pF @ 15V	±20V	-	920mW (Ta), 43W (Tc)	3.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IXTK180N15P	IXYS	MOSFET N-CH 150V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,176	MOSFET (Metal Oxide)	150V	180A (Tc)	10V	5V @ 500µA	240nC @ 10V	7000pF @ 25V	±20V	-	800W (Tc)	10 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IPI029N06NAKSA1	Infineon Technologies	MOSFET N-CH 60V 24A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,876	MOSFET (Metal Oxide)	60V	24A (Ta), 100A (Tc)	6V, 10V	2.8V @ 75µA	56nC @ 10V	4100pF @ 30V	±20V	-	3W (Ta), 136W (Tc)	2.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ40PBF	Vishay Siliconix	MOSFET N-CH 60V 50A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,268	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3710ZSTRLPBF	Infineon Technologies	MOSFET N-CH 100V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock39,024	MOSFET (Metal Oxide)	100V	59A (Tc)	10V	4V @ 250µA	120nC @ 10V	2900pF @ 25V	±20V	-	160W (Tc)	18 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R5011FNX	Rohm Semiconductor	MOSFET N-CH 500V 11A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,832	MOSFET (Metal Oxide)	500V	11A (Ta), 5.4A (Tc)	10V	4V @ 1mA	30nC @ 10V	950pF @ 25V	±30V	-	50W (Tc)	520 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
SUM85N15-19-E3	Vishay Siliconix	MOSFET N-CH 150V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock313,128	MOSFET (Metal Oxide)	150V	85A (Tc)	10V	4V @ 250µA	110nC @ 10V	4750pF @ 25V	±20V	-	3.75W (Ta), 375W (Tc)	19 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7456DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 5.7A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,632	MOSFET (Metal Oxide)	100V	5.7A (Ta)	6V, 10V	4V @ 250µA	44nC @ 10V	-	±20V	-	1.9W (Ta)	25 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
ZXMN6A09GTA	Diodes Incorporated	MOSFET N-CH 60V 6.9A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock89,484	MOSFET (Metal Oxide)	60V	5.4A (Ta)	10V	3V @ 250µA	24.2nC @ 5V	1407pF @ 40V	±20V	-	2W (Ta)	40 mOhm @ 8.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SUD23N06-31-GE3	Vishay Siliconix	MOSFET N-CH 60V 21.4A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock129,168	MOSFET (Metal Oxide)	60V	21.4A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 10V	670pF @ 25V	±20V	-	5.7W (Ta), 31.25W (Tc)	31 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
MCH3377-TL-E	onsemi	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta)	-	-	4.6 nC @ 4.5 V	375 pF @ 10 V	-	-	-	83mOhm @ 1.5A, 4.5V	-	Surface Mount	3-MCPH	SC-70, SOT-323
RQK0202RGDQAWS-H6	Renesas Electronics Corporation	P CH MOS FET POWER SWITCHING FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT015W120G3-4AG	STMicroelectronics	TO247-4 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 673W (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 60A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	129A (Tc)	15V, 18V	4.2V @ 10mA	167 nC @ 18 V	3512 pF @ 800 V	+22V, -10V	-	673W (Tc)	17.5mOhm @ 60A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4
FDS6690S	Fairchild Semiconductor	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	3V @ 1mA	16 nC @ 5 V	1233 pF @ 15 V	±20V	-	1W (Ta)	16mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPTG063N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8 Package / Case: 8-PowerSMD, Gull Wing	Package: -	Stock5,358	MOSFET (Metal Oxide)	150 V	16.2A (Ta), 122A (Tc)	8V, 10V	4.6V @ 163µA	63 nC @ 10 V	4800 pF @ 75 V	±20V	-	3.8W (Ta), 214W (Tc)	6.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8	8-PowerSMD, Gull Wing
SIA108DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 6.6A/12A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock14,382	MOSFET (Metal Oxide)	80 V	6.6A (Ta), 12A (Tc)	7.5V, 10V	4V @ 250µA	13 nC @ 10 V	545 pF @ 40 V	±20V	-	3.5W (Ta), 19W (Tc)	38mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
EPC2308ENGRT	EPC	TRANS GAN 150V .006OHM 3X5PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 7-QFN (3x5) Package / Case: 7-PowerWQFN	Package: -	Stock155,076	GaNFET (Gallium Nitride)	150 V	48A (Tc)	5V	2.5V @ 5mA	13.8 nC @ 5 V	2103 pF @ 75 V	+6V, -4V	-	-	6mOhm @ 15A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	7-QFN (3x5)	7-PowerWQFN
DI100N10PQ-AQ	Diotec Semiconductor	MOSFET PWRQFN 5X6 100V 0.0045OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	80A (Tc)	4.5V, 10V	3V @ 250µA	64 nC @ 10 V	3400 pF @ 30 V	±20V	-	50W (Tc)	5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN