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Infineon Technologies |
MOSFET N-CH 100V 1.2A PG-SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock4,768 |
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MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | ±20V | - | 1.8W (Ta) | 600 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock14,352 |
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MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 4.5V @ 250µA | 35nC @ 10V | 1370pF @ 25V | ±30V | - | 50W (Tc) | 900 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 20V 5A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,100 |
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MOSFET (Metal Oxide) | 20V | 5A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 14.5nC @ 10V | 480pF @ 10V | ±12V | - | 2W (Ta), 3.3W (Tc) | 70 mOhm @ 3.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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NXP |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,768 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 44.2nC @ 5V | 3965pF @ 25V | ±15V | - | 200W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock87,660 |
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MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 74W (Tc) | 400 mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 75V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,800 |
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MOSFET (Metal Oxide) | 75V | 75A (Tj) | 4.5V, 10V | 2V @ 1mA | - | 8840pF @ 25V | ±10V | - | 230W (Tc) | 8.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 27A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 5V @ 250µA | 83nC @ 10V | 3750pF @ 100V | ±25V | - | 160W (Tc) | 98 mOhm @ 13.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 60A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock432,276 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 5V, 10V | 1V @ 250µA | 21nC @ 5V | 2200pF @ 25V | ±20V | - | 70W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH 500V 51A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,568 |
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MOSFET (Metal Oxide) | 500V | 51A | 10V | 5V @ 1mA | 123nC @ 10V | 5590pF @ 25V | ±30V | - | 290W (Tc) | 75 mOhm @ 25.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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ON Semiconductor |
MOSFET N-CH 30V 54A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,040 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 11nC @ 4.5V | 1350pF @ 12V | ±20V | - | 1.4W (Ta), 50W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 30V TO-236AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta), 6.94W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,176 |
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MOSFET (Metal Oxide) | 20V | 6.3A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 15nC @ 4.5V | 930pF @ 10V | ±12V | - | 460mW (Ta), 6.94W (Tc) | 20 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 0.3A SC70
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3 (SOT323)
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock2,032 |
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MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 2.4V @ 250µA | - | 45pF @ 5V | ±20V | - | 150mW (Ta) | 1 Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | 5-TSSOP, SC-70-5, SOT-353 |
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STMicroelectronics |
MOSFET N-CH 800V 2.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock247,812 |
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MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 4.5V @ 50µA | 19nC @ 10V | 485pF @ 25V | ±30V | - | 70W (Tc) | 4.5 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,480 |
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MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 3.3V @ 14µA | 15nC @ 10V | 1075pF @ 30V | ±20V | - | 2.1W (Ta), 36W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 26A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,776 |
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MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 4V @ 250µA | 45.5nC @ 10V | 1781pF @ 100V | ±25V | - | 190W (Tc) | 125 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 30V 20A 8-HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 25.1W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,176 |
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MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 16.8nC @ 10V | 1080pF @ 15V | ±20V | - | 3W (Ta), 25.1W (Tc) | 4.6 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 20V 0.224A XLLGA3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 120mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-XLLGA (0.62x0.62)
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock216,000 |
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MOSFET (Metal Oxide) | 20V | 224mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.7nC @ 4.5V | 15.8pF @ 15V | ±8V | - | 120mW (Ta) | 1.4 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-XLLGA (0.62x0.62) | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CH 50V 2.4A 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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Package: 4-DIP (0.300", 7.62mm) |
Stock33,000 |
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MOSFET (Metal Oxide) | 50V | 2.4A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 400pF @ 25V | ±20V | - | 1W (Tc) | 100 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock99,822 |
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MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 6.9A SC59
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock110,436 |
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MOSFET (Metal Oxide) | 20V | 6.9A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 11.6nC @ 4.5V | 1149pF @ 10V | ±12V | - | 610mW (Ta) | 20 mOhm @ 9.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 501V~650V SO-8 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 200mA (Ta) | 10V | 4V @ 250µA | 9.7 nC @ 10 V | 400 pF @ 25 V | ±30V | - | 1.9W (Ta) | 20Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 3.8A SC59
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock81,600 |
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MOSFET (Metal Oxide) | 20 V | 3.8A (Ta) | 2.5V, 4.5V | 1.2V @ 30µA | 8.8 nC @ 4.5 V | 1147 pF @ 10 V | ±12V | - | 500mW (Ta) | 21mOhm @ 3.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC59-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8DFN 5X6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Panjit International Inc. |
600V SUPER JUNCTION MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 22.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB-F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: - |
Stock5,958 |
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MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 4V @ 250µA | 8.8 nC @ 10 V | 310 pF @ 400 V | ±30V | - | 22.5W (Tc) | 900mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB-F | TO-220-3 Full Pack, Isolated Tab |
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Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 5.4 nC @ 4.5 V | 416 pF @ 10 V | ±12V | - | 1.25W (Ta) | 100mOhm @ 3.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Renesas Electronics Corporation |
TRANSISTOR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | 40A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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