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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 368pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,176 |
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MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A VS8 2-3U1A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-8 (2.9x1.5)
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock5,312 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1550pF @ 10V | ±8V | - | 700mW (Ta) | 30 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Fairchild/ON Semiconductor |
MOSFET P-CH 60V 5.4A IPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,552 |
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MOSFET (Metal Oxide) | 60V | 5.4A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 295pF @ 25V | ±25V | - | 2.5W (Ta), 28W (Tc) | 451 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 20V 200MA SC89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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Package: SC-89, SOT-490 |
Stock3,356,424 |
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MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 300mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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ON Semiconductor |
MOSFET N-CH 24V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,536 |
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MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 17.7nC @ 5V | 2050pF @ 20V | ±20V | - | 1.25W (Ta), 78.1W (Tc) | 5.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,296 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 200V 74A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,872 |
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MOSFET (Metal Oxide) | 200V | 74A (Tc) | 10V | 4V @ 4mA | 280nC @ 10V | 5400pF @ 25V | ±20V | - | 360W (Tc) | 30 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Microsemi Corporation |
MOSFET N-CH 1200V 14A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3Pak
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock2,656 |
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MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 5V @ 1mA | 145nC @ 10V | 4765pF @ 25V | ±30V | - | 625W (Tc) | 1.2 Ohm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
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Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Stock2,176 |
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MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 3.2V @ 250µA | 153nC @ 10V | 12000pF @ 50V | ±20V | - | 375W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 2X2 4-MFP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.47W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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Package: 4-XFBGA, CSPBGA |
Stock720,300 |
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MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 17nC @ 4.5V | - | ±12V | - | 1.47W (Ta) | 65 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Torex Semiconductor Ltd |
MOSFET P-CH 20V 700MA SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,931,712 |
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MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 2.5V, 4.5V | - | - | 180pF @ 10V | ±12V | - | 500mW (Ta) | 300 mOhm @ 400mA, 4.5V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,504 |
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MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 55nC @ 10V | 4000pF @ 20V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1.45 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock22,548 |
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MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.1V @ 250µA | 6nC @ 10V | 263pF @ 100V | ±30V | - | 56.8W (Tc) | 900 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92 (TO-226)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,888 |
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MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 1W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 75V 16A 1212-8 PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 35V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock882,000 |
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MOSFET (Metal Oxide) | 75V | 16A (Tc) | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | 840pF @ 35V | ±20V | - | 3.8W (Ta), 52W (Tc) | 37 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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STMicroelectronics |
MOSFET N-CH 650V 42A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,584 |
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MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | ±25V | - | 250W (Tc) | 63 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Diotec Semiconductor |
IC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-QFN (3x3)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 2060 pF @ 15 V | ±20V | - | 40W (Tc) | 9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerVDFN |
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NEC Corporation |
SMALL SIGNAL FET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750W (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | - | 230 pF @ 10 V | ±20V | - | 750W (Ta) | 400mOhm @ 500mA, 10V | 150°C | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8DSO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock7,413 |
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MOSFET (Metal Oxide) | 30 V | 9.2A (Ta) | 10V | 2.2V @ 140µA | 81 nC @ 10 V | 3520 pF @ 25 V | ±25V | - | 1.56W (Ta) | 13mOhm @ 11.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 38A/72.5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 72.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock6,756 |
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MOSFET (Metal Oxide) | 60 V | 38A (Ta), 72.5A (Tc) | 6V, 10V | 3.4V @ 250µA | 60 nC @ 10 V | 2870 pF @ 30 V | ±20V | - | 8.3W (Ta), 30W (Tc) | 3.3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 28A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 4.5V @ 250µA | 39 nC @ 10 V | 2993 pF @ 100 V | ±20V | - | 357W (Tc) | 125mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
DICE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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YAGEO XSEMI |
MOSFET N-CH 60V 93A TO220CFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220CFM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 60 V | 93A (Tc) | 10V | 4V @ 250µA | 192 nC @ 10 V | 11600 pF @ 50 V | ±20V | - | 1.92W (Ta), 34.7W (Tc) | 2.4mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220CFM | TO-220-3 Full Pack |
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Sanyo |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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SparkFun Electronics |
P-CHANNEL MOSFET 20V 24A - LOW V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 24A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 24A | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tj)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 170A (Tc) | 10V | 4V @ 250µA | 100 nC @ 10 V | 6452 pF @ 40 V | ±20V | - | 208W (Tj) | 2.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Renesas Electronics Corporation |
DISCRETE / POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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International Rectifier |
AUTOMOTIVE HEXFET N-CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 25W
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 3.5A | - | - | - | - | - | - | 25W | - | - | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |