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Infineon Technologies |
MOSFET N-CH 60V 45A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,400 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 2.2V @ 35µA | 64nC @ 10V | 4780pF @ 25V | ±16V | - | 71W (Tc) | 8.2 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,488 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | ±20V | - | 215W (Tc) | 7.7 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,376 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 110W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 8.8A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
|
Package: SC-74, SOT-457 |
Stock644,604 |
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MOSFET (Metal Oxide) | 20V | 8.8A (Ta) | 1.8V, 10V | 1V @ 250µA | 22nC @ 4.5V | 2200pF @ 10V | ±12V | - | 2W (Ta) | 18 mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 3A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,840 |
|
MOSFET (Metal Oxide) | 200V | 3A (Tc) | 5V, 10V | 5V @ 250µA | 6.5nC @ 10V | 220pF @ 25V | ±20V | - | 2.5W (Ta), 30W (Tc) | 1.4 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 550V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock210,000 |
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MOSFET (Metal Oxide) | 550V | 3A (Tc) | 10V | 5V @ 250µA | 5.5nC @ 10V | 140pF @ 25V | ±30V | - | 46W (Tc) | 3 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 30V 90A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock10,116 |
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MOSFET (Metal Oxide) | 30V | 23A (Ta), 90A (Tc) | 4.5V, 10V | 2.35V @ 50µA | 31nC @ 10V | 2380pF @ 10V | ±20V | - | 3.6W (Ta), 54W (Tc) | 4.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 70V 180A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,160 |
|
MOSFET (Metal Oxide) | 70V | 180A (Tc) | 10V | 4V @ 8mA | 420nC @ 10V | 9400pF @ 25V | ±20V | - | 568W (Tc) | 6 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 12A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,816 |
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MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | ±30V | - | 225W (Tc) | 650 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 40A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 13.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,568 |
|
MOSFET (Metal Oxide) | 30V | 10.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 11.5V | 895pF @ 12V | ±20V | - | 2.4W (Ta), 60W (Tc) | 13.1 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock3,840 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta), 136A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45.2nC @ 10V | 3071pF @ 15V | ±20V | - | 3.1W (Ta), 64W (Tc) | 1.7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 3A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,864 |
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MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 662pF @ 100V | ±30V | - | 83W (Tc) | 1.4 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock5,120 |
|
MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 3000pF @ 25V | ±20V | - | 68W (Tc) | 8.2 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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ON Semiconductor |
MOSFET P-CH 30V 50A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock508,476 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V | 2V @ 250µA | 100nC @ 5V | 4900pF @ 25V | ±15V | - | 2.5W (Ta), 125W (Tc) | 25 mOhm @ 25A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9815pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock17,676 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.5V @ 250µA | 151nC @ 10V | 9815pF @ 25V | ±20V | - | 231W (Tc) | 3.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 200V 130A MAX247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247?
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,392 |
|
MOSFET (Metal Oxide) | 200V | 130A (Tc) | 10V | 4V @ 250µA | 338nC @ 10V | 11100pF @ 25V | ±20V | - | 450W (Tc) | 12 mOhm @ 65A, 10V | -55°C ~ 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
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|
STMicroelectronics |
MOSFET N-CH 500V 21A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock99,924 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1735pF @ 25V | ±25V | - | 35W (Tc) | 158 mOhm @ 10.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock206,400 |
|
MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | ±20V | - | 144W (Tc) | 77.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 55V 2A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock566,280 |
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MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | ±16V | - | 1W (Ta) | 140 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock60,264 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 70nC @ 10V | 2650pF @ 25V | ±20V | - | 3W (Ta), 136W (Tc) | 9.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 100V 5.5/32A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 5.5A (Ta), 32A (Tc) | 6V, 10V | 4V @ 250µA | 28 nC @ 10 V | 1250 pF @ 25 V | ±20V | - | 95W (Tc) | 36mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V 3.8A SOT23 T&R 1
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 487 pF @ 20 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 800mW
- Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6.3 nC @ 4.5 V | 487 pF @ 20 V | ±8V | - | 800mW | 62mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 40V 53.3A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 53.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Tc)
- Rds On (Max) @ Id, Vgs: 0.72mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 53.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 203 nC @ 10 V | 14100 pF @ 20 V | ±20V | - | 3.5W (Tc) | 0.72mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CHANNEL 100V 34A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56.5W (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 50 nC @ 10 V | 2420 pF @ 50 V | ±20V | - | 56.5W (Tc) | 12mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Central Semiconductor Corp |
MOSFET P-CH 30V 11A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 8 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock20,295 |
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MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 80 nC @ 10 V | 3100 pF @ 8 V | 20V | - | 2.5W (Ta) | 20mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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onsemi |
MOSFET N-CH 500V 3.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 5V @ 250µA | 15 nC @ 10 V | 650 pF @ 25 V | ±30V | - | 40W (Tc) | 1.55Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
GAN HV
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 55.5W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-6
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 12.8A (Tc) | - | 1.6V @ 960µA | - | 157 pF @ 400 V | -10V | - | 55.5W (Tc) | - | -40°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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