|
|
ON Semiconductor |
MOSFET N-CH 30V 9.1A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock4,816 |
|
MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 4.5V | 2310pF @ 24V | ±20V | - | 900mW (Ta) | 6 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock568,728 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Tj) | 1.8V, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | 680pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.1W (Ta) | 80 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
|
|
Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock5,824 |
|
MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 2.4V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
|
|
Infineon Technologies |
MOSFET N-CH 550V 12A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,424 |
|
MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
IXYS |
MOSFET N-CH 600V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock4,592 |
|
MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 5V @ 1mA | 25nC @ 10V | 1480pF @ 25V | ±30V | - | 327W (Tc) | 540 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,208 |
|
MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 2V @ 1mA | - | 50pF @ 25V | ±30V | - | 1W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 16A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.25V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock2,624 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 5.25V @ 1mA | 26nC @ 10V | 1370pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 180 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 3A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,928 |
|
MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 4.5V @ 250µA | 8nC @ 10V | 331pF @ 25V | ±30V | - | 74W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 30V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 45A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock972,684 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 5V, 10V | 2.5V @ 250µA | 47nC @ 5V | 2700pF @ 25V | ±20V | - | 150W (Tc) | 6.5 mOhm @ 45A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 41A TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 273W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,216 |
|
SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | - | 273W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,768 |
|
MOSFET (Metal Oxide) | 100V | 11.4A (Ta), 90A (Tc) | 4.5V, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | ±20V | - | 156W (Tc) | 10.5 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock72,840 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock223,956 |
|
MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 73nC @ 10V | 3720pF @ 13V | ±20V | - | 115W (Tc) | 4 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Vishay Siliconix |
MOSFET N-CH 400V 1.7A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock36,000 |
|
MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Vishay Siliconix |
MOSFET N-CH 600V 320MA 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
|
Package: 4-DIP (0.300", 7.62mm) |
Stock24,180 |
|
MOSFET (Metal Oxide) | 600V | 320mA (Ta) | 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | ±20V | - | 1W (Ta) | 4.4 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
|
Infineon Technologies |
MOSFET N-CH 100V 31A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock23,472 |
|
MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | ±20V | - | 3W (Ta), 110W (Tc) | 39 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock62,736 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 110W (Tc) | 65 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Nexperia USA Inc. |
MOSFET P-CH 20V 7.9A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock235,158 |
|
MOSFET (Metal Oxide) | 20V | 7.9A (Tc) | 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 1020pF @ 20V | ±12V | - | 5W (Tc) | 50 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 154W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 4.5V @ 1.9mA | 39 nC @ 10 V | 1500 pF @ 400 V | ±30V | - | 154W (Tc) | 165mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
EPC Space, LLC |
GAN FET HEMT 100V 90A COTS 5UB
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-SMD
- Package / Case: 5-SMD, No Lead
|
Package: - |
Stock24 |
|
GaNFET (Gallium Nitride) | 100 V | 80A (Tc) | 5V | 2.5V @ 12mA | 11.7 nC @ 5 V | 1240 pF @ 50 V | +6V, -4V | - | - | 6mOhm @ 40A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 5-SMD | 5-SMD, No Lead |
|
|
Nexperia USA Inc. |
650 V, 140 MOHM GALLIUM NITRIDE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
- Vgs (Max): +7V, -1.4V
- FET Feature: -
- Power Dissipation (Max): 113W (Ta)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: DFN8080-8
- Package / Case: 8-VDFN Exposed Pad
|
Package: - |
Stock7,353 |
|
GaNFET (Gallium Nitride) | 650 V | 17A (Ta) | 6V | 2.5V @ 17.2mA | 3.5 nC @ 6 V | 125 pF @ 400 V | +7V, -1.4V | - | 113W (Ta) | 140mOhm @ 5A, 6V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN8080-8 | 8-VDFN Exposed Pad |
|
|
Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tj)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 4V @ 250µA | 13 nC @ 10 V | 1000 pF @ 25 V | ±20V | - | 74W (Tj) | 6.8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 3.8A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 2.5V, 10V | 1.8V @ 250µA | 3.6 nC @ 4.5 V | 270 pF @ 15 V | ±12V | - | 1.4W (Ta) | 60mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
|
|
International Rectifier |
AUTOMOTIVE HEXFET N CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 140A (Tc) | - | 4V @ 250µA | 220 nC @ 10 V | 5310 pF @ 25 V | - | - | 330W (Tc) | 7mOhm @ 82A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V~30V TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.4A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 14.3 nC @ 10 V | 749 pF @ 15 V | ±20V | - | 1.6W (Ta) | 42mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
|
|
Rohm Semiconductor |
SICFET N-CH 1200V 30A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 159W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
Package: - |
Stock2,355 |
|
SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | - | 5.6V @ 5mA | 60 nC @ 18 V | 785 pF @ 800 V | +22V, -4V | - | 159W | 104mOhm @ 10A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
|
|
Renesas Electronics Corporation |
MOSFET N-CH 500V 10A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 29.5W (Ta)
- Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 10A (Ta) | 10V | - | 23 nC @ 10 V | 765 pF @ 25 V | ±30V | - | 29.5W (Ta) | 850mOhm @ 5A, 10V | 150°C | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Nexperia USA Inc. |
PSMN6R7-40MLD/SOT1210/MLFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Ta)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 4.5V, 10V | 2.15V @ 1mA | 31 nC @ 10 V | 2071 pF @ 20 V | ±20V | - | 65W (Ta) | 6.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |