|
|
Infineon Technologies |
MOSFET N-CH 25V 57A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,232 |
|
MOSFET (Metal Oxide) | 25V | 57A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | ±20V | - | 48W (Tc) | 8.7 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock51,600 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 2.7V, 10V | 2V @ 250µA | 51nC @ 4.5V | 3150pF @ 15V | ±12V | - | 2.5W (Ta) | 8 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 7A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 17.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,920 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta), 35A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 2400pF @ 30V | ±20V | - | 2.1W (Ta), 100W (Tc) | 17.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
|
Package: 10-PolarPAK? (L) |
Stock7,168 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 138nC @ 10V | 6100pF @ 15V | ±20V | - | 5.2W (Ta), 125W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
|
|
ON Semiconductor |
MOSFET N-CH 30V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,888 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2V @ 250µA | 75nC @ 5V | 5635pF @ 25V | ±20V | - | 2.5W (Ta), 125W (Tc) | 6.5 mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
NXP |
MOSFET N-CH 30V 63A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock5,744 |
|
MOSFET (Metal Oxide) | 30V | 63A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 13.3nC @ 4.5V | 1565pF @ 12V | ±20V | - | 62.5W (Tc) | 9.9 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Infineon Technologies |
MOSFET N CH 100V 56A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3031pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,584 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | ±20V | - | 143W (Tc) | 13.9 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Renesas Electronics America |
MOSFET N-CH 100V 70A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,168 |
|
MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 3.3V @ 250µA | 75nC @ 10V | 3750pF @ 25V | ±20V | - | 1.8W (Ta), 120W (Tc) | 20 mOhm @ 35A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 9.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,256 |
|
MOSFET (Metal Oxide) | 600V | 9.5A (Tc) | 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | ±30V | - | 50W (Tc) | 730 mOhm @ 4.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251B
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock2,592 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 70A (Tc) | 10V, 20V | 3.5V @ 250µA | 65nC @ 10V | 2760pF @ 15V | ±25V | - | 2.5W (Ta), 90W (Tc) | 6.7 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
|
|
Diodes Incorporated |
MOSFET N-CH 60V 0.34A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock5,184 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.5pF @ 30V | ±20V | - | 320mW (Ta) | 2 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,016 |
|
MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 4.5V @ 250µA | 6.1nC @ 10V | 138pF @ 25V | ±30V | - | 39W (Tc) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 16.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock35,160 |
|
MOSFET (Metal Oxide) | 100V | 33A (Ta) | 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | ±20V | - | 125W (Tc) | 9.7 mOhm @ 16.5A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET P-CH 60V 1.8A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock1,424,640 |
|
MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 18.1nC @ 10V | 942pF @ 30V | ±20V | - | 600mW (Ta) | 111 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,648 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | ±20V | - | 52W (Tc) | 1.3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock209,340 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 31.5nC @ 10V | 1440pF @ 15V | ±20V | - | 3.8W (Ta), 52W (Tc) | 8.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK 1212-8S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 20V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock29,976 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 75nC @ 10V | 3750pF @ 20V | +20V, -16V | - | 57W (Tc) | 2.65 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8S (3.3x3.3) | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET P-CH 55V 74A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock473,952 |
|
MOSFET (Metal Oxide) | 55V | 74A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | ±20V | - | 200W (Tc) | 20 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Vishay Siliconix |
MOSFET P-CH 20V 4.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock599,868 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.7V, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 40 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
onsemi |
MOSFET N-CH 40V 45A/240A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.3W (Ta), 136.4W (Tc)
- Rds On (Max) @ Id, Vgs: 1.21mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 45A (Ta), 240A (Tc) | 10V | 3.5V @ 190µA | 75 nC @ 10 V | 4960 pF @ 25 V | +20V, -16V | - | 4.3W (Ta), 136.4W (Tc) | 1.21mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
|
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 4V @ 250µA | 75 nC @ 20 V | 1060 pF @ 25 V | ±20V | - | 128W (Tc) | 24mOhm @ 49A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 40V 230A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 230A (Tc) | 10V | 4V @ 250µA | 140 nC @ 10 V | 7400 pF @ 25 V | ±15V | - | 40W (Tc) | 2.9mOhm @ 115A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
|
|
Diotec Semiconductor |
MOSFET SOT23 N 60V 0.36A 1.6OHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 51.3 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 360mA (Ta) | 2.5V, 10V | 1.6V @ 250µA | 1.3 nC @ 10 V | 51.3 pF @ 10 V | ±20V | - | 350mW (Ta) | 1.6Ohm @ 350mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
Package: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 650 V | 64A (Tc) | 18V | 5.7V @ 12.3mA | 67 nC @ 18 V | 2288 pF @ 400 V | +23V, -5V | - | 300W (Tc) | 30mOhm @ 41.1A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
|
|
Diotec Semiconductor |
MOSFET SO8 90V 8A 0.075OHM 150C
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 8A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 2W
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Stock12,000 |
|
- | - | 8A | - | - | - | - | - | - | 2W | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT23-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
MOSFET P-CH 30V 450MA SOT883VL
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883VL
- Package / Case: SC-101, SOT-883
|
Package: - |
Stock1,617 |
|
MOSFET (Metal Oxide) | 30 V | 450mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.88 nC @ 4.5 V | 55 pF @ 25 V | 8V | - | 100mW (Ta) | 1.1Ohm @ 430mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |