Page 122 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3315LPBF
Infineon Technologies

MOSFET N-CH 150V 21A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,648
SPB100N03S2-03
Infineon Technologies

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock36,120
IRF7467TR
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,544
PMZ270XN,315
Nexperia USA Inc.

MOSFET N-CH 20V 2.15A SOT883

Package: SC-101, SOT-883

Stock7,888
NTTFS4823NTWG
ON Semiconductor

MOSFET N-CH 30V 7.1A 8WDFN

Package: 8-PowerWDFN

Stock530,112
IXFV74N20P
IXYS

MOSFET N-CH 200V 74A PLUS220

Package: TO-220-3, Short Tab

Stock3,552
IXFC36N50P
IXYS

MOSFET N-CH 500V 19A ISOPLUS220

Package: ISOPLUS220?

Stock7,168
FQD19N10LTF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,144
BUK9520-100A,127
Nexperia USA Inc.

MOSFET N-CH 100V 63A TO220AB

Package: TO-220-3

Stock5,600
STD150NH02LT4
STMicroelectronics

MOSFET N-CH 24V 150A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock596,148
SQM60N06-15_GE3
Vishay Siliconix

MOSFET N-CH 60V 56A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,768
RSR020P05FRATL
Rohm Semiconductor

MOSFET P-CH 45V 2A TSMT3

Package: SC-96

Stock2,752
DMJ70H1D3SH3
Diodes Incorporated

MOSFET BVDSS: 651V 800V TO251

Package: TO-251-3 Stub Leads, IPak

Stock5,760
IXFH14N85X
IXYS

MOSFET N-CH 850V 14A TO247-3

Package: TO-247-3

Stock6,204
STW62NM60N
STMicroelectronics

MOSFET N-CH 600V 65A TO-247

Package: TO-247-3

Stock3,904
IRFHM8326TRPBF
Infineon Technologies

MOSFET N-CH 30V 25A PQFN

Package: 8-PowerTDFN

Stock57,336
SISA16DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V D-S PPAK 1212-8

Package: PowerPAK? 1212-8

Stock23,592
SI7421DN-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 6.4A 1212-8

Package: PowerPAK? 1212-8

Stock361,008
PMV52ENER
Nexperia USA Inc.

PMV52ENE/SOT23/TO-236AB

Package: -

Stock1,848
DMP3007SCGQ-13
Diodes Incorporated

MOSFET P-CH 30V 50A 8DFN

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3315LPBF	Infineon Technologies	MOSFET N-CH 150V 21A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,648	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SPB100N03S2-03	Infineon Technologies	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock36,120	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7467TR	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,544	MOSFET (Metal Oxide)	30V	11A (Ta)	2.8V, 10V	2V @ 250µA	32nC @ 4.5V	2530pF @ 15V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PMZ270XN,315	Nexperia USA Inc.	MOSFET N-CH 20V 2.15A SOT883 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock7,888	MOSFET (Metal Oxide)	20V	2.15A (Tc)	2.5V, 4.5V	1.5V @ 250µA	0.72nC @ 4.5V	34pF @ 20V	±12V	-	2.5W (Tc)	340 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
NTTFS4823NTWG	ON Semiconductor	MOSFET N-CH 30V 7.1A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock530,112	MOSFET (Metal Oxide)	30V	7.1A (Ta), 50A (Tc)	4.5V, 11.5V	2.5V @ 250µA	9nC @ 4.5V	1013pF @ 12V	±20V	-	660mW (Ta), 32.9W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IXFV74N20P	IXYS	MOSFET N-CH 200V 74A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,552	MOSFET (Metal Oxide)	200V	74A (Tc)	10V	5V @ 4mA	107nC @ 10V	3300pF @ 25V	±20V	-	480W (Tc)	34 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXFC36N50P	IXYS	MOSFET N-CH 500V 19A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,168	MOSFET (Metal Oxide)	500V	19A (Tc)	10V	5V @ 4mA	93nC @ 10V	5500pF @ 25V	±30V	-	156W (Tc)	190 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
FQD19N10LTF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,144	MOSFET (Metal Oxide)	100V	15.6A (Tc)	5V, 10V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±20V	-	2.5W (Ta), 50W (Tc)	100 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9520-100A,127	Nexperia USA Inc.	MOSFET N-CH 100V 63A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6385pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,600	MOSFET (Metal Oxide)	100V	63A (Tc)	4.5V, 10V	2V @ 1mA	-	6385pF @ 25V	±10V	-	200W (Tc)	19 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD150NH02LT4	STMicroelectronics	MOSFET N-CH 24V 150A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock596,148	MOSFET (Metal Oxide)	24V	150A (Tc)	5V, 10V	1.8V @ 250µA	93nC @ 10V	4450pF @ 15V	±20V	-	125W (Tc)	3.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SQM60N06-15_GE3	Vishay Siliconix	MOSFET N-CH 60V 56A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,768	MOSFET (Metal Oxide)	60V	56A (Tc)	10V	3.5V @ 250µA	50nC @ 10V	2480pF @ 25V	±20V	-	107W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSR020P05FRATL	Rohm Semiconductor	MOSFET P-CH 45V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock2,752	MOSFET (Metal Oxide)	45V	2A (Ta)	4V, 10V	3V @ 1mA	4.5nC @ 4.5V	500pF @ 10V	±20V	-	540mW (Ta)	190 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DMJ70H1D3SH3	Diodes Incorporated	MOSFET BVDSS: 651V 800V TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock5,760	MOSFET (Metal Oxide)	700V	4.6A (Tc)	10V	4V @ 250µA	13.9nC @ 10V	351pF @ 50V	±30V	-	41W (Tc)	1.3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Stub Leads, IPak
IXFH14N85X	IXYS	MOSFET N-CH 850V 14A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,204	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	460W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
STW62NM60N	STMicroelectronics	MOSFET N-CH 600V 65A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 32.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,904	MOSFET (Metal Oxide)	600V	65A (Tc)	10V	4V @ 250µA	174nC @ 10V	5800pF @ 100V	±25V	-	450W (Tc)	49 mOhm @ 32.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFHM8326TRPBF	Infineon Technologies	MOSFET N-CH 30V 25A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2496pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock57,336	MOSFET (Metal Oxide)	30V	19A (Ta)	4.5V, 10V	2.2V @ 50µA	39nC @ 10V	2496pF @ 10V	±20V	-	2.8W (Ta), 37W (Tc)	4.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	-	8-PowerTDFN
SISA16DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V D-S PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock23,592	MOSFET (Metal Oxide)	30V	16A (Ta)	-	2.3V @ 250µA	47nC @ 10V	2060pF @ 15V	-	-	-	6.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7421DN-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 6.4A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock361,008	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	-	±20V	-	1.5W (Ta)	25 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
PMV52ENER	Nexperia USA Inc.	PMV52ENE/SOT23/TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock1,848	MOSFET (Metal Oxide)	30 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	3.3 nC @ 10 V	100 pF @ 15 V	±20V	-	630mW (Ta), 5.7W (Tc)	70mOhm @ 3.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMP3007SCGQ-13	Diodes Incorporated	MOSFET P-CH 30V 50A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	3V @ 250µA	64.2 nC @ 10 V	2826 pF @ 15 V	±25V	-	1W (Ta)	6.8mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
AON6382	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 30V 85A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	85A (Tc)	4.5V, 10V	2.2V @ 250µA	65 nC @ 10 V	3100 pF @ 15 V	±20V	-	50W (Tc)	1.85mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SIHFU9220-GE3	Vishay Siliconix	MOSFET P-CH 200V 3.6A TO251AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Stock8,934	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	3400 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	1.5Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
SCT2080KEHRC11	Rohm Semiconductor	SICFET N-CH 1200V 40A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock9,426	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	4V @ 4.4mA	106 nC @ 18 V	2080 pF @ 800 V	+22V, -6V	-	-	117mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IPP016N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 196A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock1,773	MOSFET (Metal Oxide)	80 V	35A (Ta), 196A (Tc)	6V, 10V	3.8V @ 267µA	255 nC @ 10 V	12000 pF @ 40 V	±20V	-	3.8W (Ta), 300W (Tc)	1.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
NVMFS003P03P8ZT1G	onsemi	PFET SO8FL -30V 3MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,428	MOSFET (Metal Oxide)	30 V	35.7A (Ta), 234A (Tc)	4.5V, 10V	3V @ 250µA	167 nC @ 4.5 V	12120 pF @ 15 V	±25V	-	3.9W (Ta), 168.7W (Tc)	1.8mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PJF60R980E_T0_00001	Panjit International Inc.	600V N-CHANNEL SUPER JUNCTION MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 250µA	14.4 nC @ 10 V	300 pF @ 25 V	±20V	-	40W (Tc)	980mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack
SIR108DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 100V 12.4A/45A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	12.4A (Ta), 45A (Tc)	7.5V, 10V	3.6V @ 250µA	41.5 nC @ 10 V	2060 pF @ 50 V	±20V	-	5W (Ta), 65.7W (Tc)	13.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPT017N10NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 216µA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: -	Stock4,992	MOSFET (Metal Oxide)	100 V	33A (Ta), 294A (Tc)	6V, 10V	3.8V @ 216µA	195 nC @ 10 V	9300 pF @ 50 V	±20V	-	3.8W (Ta), 300W (Tc)	1.75mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN