Page 123 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPW60R250CP
Infineon Technologies

MOSFET N-CH 650V 12A TO-247

Package: TO-247-3

Stock103,464
SPP47N10
Infineon Technologies

MOSFET N-CH 100V 47A TO-220

Package: TO-220-3

Stock512,604
IRF1010NL
Infineon Technologies

MOSFET N-CH 55V 85A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,672
2SK2962,T6WNLF(J
Toshiba Semiconductor and Storage

MOSFET N-CH

Package: TO-226-3, TO-92-3 Long Body

Stock7,456
IRFBF30STRL
Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,016
STH290N4F6-6
STMicroelectronics

MOSFET N-CH 60V H2PAK-6

Package: -

Stock7,376
IRFR3411PBF
Infineon Technologies

MOSFET N-CH 100V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736
IXTR36P15P
IXYS

MOSFET P-CH 150V 22A ISOPLUS247

Package: ISOPLUS247?

Stock4,976
NVMFS5C410NAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,608
RSD045P05TL
Rohm Semiconductor

MOSFET P-CH 45V CPT3

Package: -

Stock5,648
DMG3406L-13
Diodes Incorporated

MOSFET N-CH 30V 3.6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,800
IPB60R099C6
Infineon Technologies

MOSFET N-CH 600V 37.9A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock40,716
IPB080N06N G
Infineon Technologies

MOSFET N-CH 60V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,392
SQ2319ADS-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 4.6A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,312
IPW90R1K2C3
Infineon Technologies

MOSFET N-CH 900V 5.1A TO-247

Package: TO-247-3

Stock15,000
STD11N50M2
STMicroelectronics

MOSFET N-CH 500V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,548
BUK6209-30C,118
Nexperia USA Inc.

MOSFET N-CH 30V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock23,232
STW20N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.24 OHM TYP.,

Package: TO-247-3

Stock15,180
IRFI820GPBF
Vishay Siliconix

MOSFET N-CH 500V 2.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock252,000
IRLR3110ZTRPBF
Infineon Technologies

MOSFET N-CH 100V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock177,384

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPW60R250CP	Infineon Technologies	MOSFET N-CH 650V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	3.5V @ 440µA	35nC @ 10V	1200pF @ 100V	±20V	-	104W (Tc)	250 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
SPP47N10	Infineon Technologies	MOSFET N-CH 100V 47A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock512,604	MOSFET (Metal Oxide)	100V	47A (Tc)	10V	4V @ 2mA	105nC @ 10V	2500pF @ 25V	±20V	-	175W (Tc)	33 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRF1010NL	Infineon Technologies	MOSFET N-CH 55V 85A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,672	MOSFET (Metal Oxide)	55V	85A (Tc)	10V	4V @ 250µA	120nC @ 10V	3210pF @ 25V	±20V	-	180W (Tc)	11 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK2962,T6WNLF(J	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock7,456	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
IRFBF30STRL	Vishay Siliconix	MOSFET N-CH 900V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,016	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	3.7 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH290N4F6-6	STMicroelectronics	MOSFET N-CH 60V H2PAK-6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,376	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFR3411PBF	Infineon Technologies	MOSFET N-CH 100V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	±20V	-	130W (Tc)	44 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTR36P15P	IXYS	MOSFET P-CH 150V 22A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,976	MOSFET (Metal Oxide)	150V	22A (Tc)	10V	5V @ 250µA	55nC @ 10V	2950pF @ 25V	±20V	-	150W (Tc)	120 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
NVMFS5C410NAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,608	MOSFET (Metal Oxide)	40V	46A (Ta), 300A (Tc)	10V	3.5V @ 250µA	86nC @ 10V	6100pF @ 25V	±20V	-	3.9W (Ta), 166W (Tc)	0.92 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
RSD045P05TL	Rohm Semiconductor	MOSFET P-CH 45V CPT3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMG3406L-13	Diodes Incorporated	MOSFET N-CH 30V 3.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,800	MOSFET (Metal Oxide)	30V	3.6A (Ta)	4.5V, 10V	2V @ 250µA	11.2nC @ 10V	495pF @ 15V	±20V	-	770mW (Ta)	50 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPB60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock40,716	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	3.5V @ 1.21mA	119nC @ 10V	2660pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB080N06N G	Infineon Technologies	MOSFET N-CH 60V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,392	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 150µA	93nC @ 10V	3500pF @ 30V	±20V	-	214W (Tc)	7.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQ2319ADS-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 4.6A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,312	MOSFET (Metal Oxide)	40V	4.6A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	620pF @ 20V	±20V	-	2.5W (Tc)	75 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IPW90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock15,000	MOSFET (Metal Oxide)	900V	5.1A (Tc)	10V	3.5V @ 310µA	28nC @ 10V	710pF @ 100V	±20V	-	83W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
STD11N50M2	STMicroelectronics	MOSFET N-CH 500V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,548	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	12nC @ 10V	395pF @ 100V	±25V	-	85W (Tc)	530 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6209-30C,118	Nexperia USA Inc.	MOSFET N-CH 30V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock23,232	MOSFET (Metal Oxide)	30V	50A (Tc)	10V	2.8V @ 1mA	30.5nC @ 10V	1760pF @ 25V	±16V	-	80W (Tc)	9.8 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STW20N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.24 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock15,180	MOSFET (Metal Oxide)	900V	20A	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	Current Sensing	250W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFI820GPBF	Vishay Siliconix	MOSFET N-CH 500V 2.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock252,000	MOSFET (Metal Oxide)	500V	2.1A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	30W (Tc)	3 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRLR3110ZTRPBF	Infineon Technologies	MOSFET N-CH 100V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock177,384	MOSFET (Metal Oxide)	100V	42A (Tc)	4.5V, 10V	2.5V @ 100µA	48nC @ 4.5V	3980pF @ 25V	±16V	-	140W (Tc)	14 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TJ90S04M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 90A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock19,155	MOSFET (Metal Oxide)	40 V	90A (Ta)	4.5V, 10V	2V @ 1mA	172 nC @ 10 V	7700 pF @ 10 V	+10V, -20V	-	180W (Tc)	4.3mOhm @ 45A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK2373ZE-TL-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3116B-1-ZK-E2-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJ486EP-T1_BE3	Vishay Siliconix	N-CHANNEL 75-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 37 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock27,000	MOSFET (Metal Oxide)	75 V	30A (Tc)	4.5V, 10V	2.1V @ 250µA	34 nC @ 10 V	1386 pF @ 37 V	±20V	-	56W (Tc)	26mOhm @ 5.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IXTP94N20X4	IXYS	MOSFET 200V 94A N-CH ULTRA TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock921	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	4.5V @ 250µA	77 nC @ 10 V	5050 pF @ 25 V	±20V	-	360W (Tc)	10.6mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SISA88DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16.2A/40.5A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock109,518	MOSFET (Metal Oxide)	30 V	16.2A (Ta), 40.5A (Tc)	4.5V, 10V	2.4V @ 250µA	25.5 nC @ 10 V	985 pF @ 15 V	+20V, -16V	-	3.2W (Ta), 19.8W (Tc)	6.7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
FCH47N60-F133	onsemi	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 F @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock858	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	5V @ 250µA	270 nC @ 10 V	8000 F @ 25 V	±30V	-	417W (Tc)	70mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SSM3K361TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 3.5A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Lead	Package: -	Stock10,956	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	430 pF @ 15 V	±20V	-	1W (Ta)	69mOhm @ 2A, 10V	175°C	Surface Mount	UFM	3-SMD, Flat Lead