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Infineon Technologies |
MOSFET N-CH 75V 230A D2PAK-7P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock36,000 |
|
MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 50V | ±20V | - | 370W (Tc) | 2.6 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
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|
Infineon Technologies |
MOSFET N-CH 85V 67A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,200 |
|
MOSFET (Metal Oxide) | 85V | 67A (Tc) | 10V | 4V @ 83µA | 64nC @ 10V | 4340pF @ 40V | ±20V | - | 125W (Tc) | 12.9 mOhm @ 67A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
NXP |
MOSFET N-CH 30V 6A SC-73
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock7,232 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11nC @ 10V | 492pF @ 15V | ±20V | - | 820mW (Ta), 8.33W (Tc) | 29 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 14.5A 8-SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock11,664 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 63nC @ 10V | 2510pF @ 15V | ±20V | - | 2.5W (Ta) | 6 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
ON Semiconductor |
MOSFET N-CH 60V 32A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock451,452 |
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MOSFET (Metal Oxide) | 60V | 32A (Ta) | 5V | 2V @ 250µA | 50nC @ 5V | 1700pF @ 25V | ±20V | - | 1.5W (Ta), 93.75W (Tj) | 28 mOhm @ 16A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 2.8A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock4,944 |
|
MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 5V @ 250µA | 6.5nC @ 10V | 220pF @ 25V | ±30V | - | 27W (Tc) | 1.4 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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|
Microsemi Corporation |
MOSFET N-CH 600V 39A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5630pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock5,152 |
|
MOSFET (Metal Oxide) | 600V | 39A | 10V | 5V @ 2.5mA | 130nC @ 10V | 5630pF @ 25V | ±30V | - | 460W (Tc) | 130 mOhm @ 19.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 500V 70A ISOPLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS264?
- Package / Case: ISOPLUS264?
|
Package: ISOPLUS264? |
Stock4,384 |
|
MOSFET (Metal Oxide) | 500V | 70A (Tc) | 10V | 5V @ 8mA | 240nC @ 10V | 20000pF @ 25V | ±30V | - | 625W (Tc) | 52 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264? | ISOPLUS264? |
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IXYS |
MOSFET N-CH 900V 16A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 900V | 16A (Tc) | 10V | 5V @ 4mA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 360W (Tc) | 650 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 1000V 5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,096 |
|
MOSFET (Metal Oxide) | 1000V | 5A (Tc) | 10V | 6V @ 250µA | 33.4nC @ 10V | 1830pF @ 25V | ±30V | - | 250W (Tc) | 2.8 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 150V 62A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock6,880 |
|
MOSFET (Metal Oxide) | 150V | 62A (Tc) | 10V | 5.5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | ±20V | - | 350W (Tc) | 40 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
|
STMicroelectronics |
MOSFET N-CH 600V 9A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock19,824 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | ±25V | - | 25W (Tc) | 450 mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET P-CH 30V 39.6A TSDSON-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock7,616 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 39.5A (Tc) | 6V, 10V | 3.1V @ 48µA | 30nC @ 10V | 2220pF @ 15V | ±25V | - | 2.1W (Ta), 40W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 300A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19250pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock5,360 |
|
MOSFET (Metal Oxide) | 60V | 300A (Tc) | 10V | 4V @ 250µA | 243nC @ 10V | 19250pF @ 30V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.4 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | - | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 2.8A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 128 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock67,500 |
|
MOSFET (Metal Oxide) | 150V | 2.8A (Tc) | 6V, 10V | 4V @ 250µA | 7nC @ 10V | 395pF @ 75V | ±20V | - | 2.2W (Ta) | 128 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
|
|
Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock192,060 |
|
MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | ±20V | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
|
|
Nexperia USA Inc. |
MOSFET N-CH 100V SIL3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock34,494 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 4V @ 1mA | 128nC @ 10V | 7110pF @ 50V | ±20V | - | 294W (Tc) | 7.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock18,612 |
|
MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 156nC @ 10V | 5940pF @ 10V | ±10V | - | 2.3W (Ta) | 6.7 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
|
|
Nexperia USA Inc. |
MOSFET N-CH 60V 300MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock81,600 |
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MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Tc) | 5 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 11A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock8,244 |
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MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 6.3 nC @ 5 V | 860 pF @ 15 V | 20V | - | 2.5W (Ta) | 20mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 600V 13A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4V @ 250µA | 64 nC @ 10 V | 1205 pF @ 100 V | ±30V | - | 147W (Tc) | 309mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 100V 35A/267A 8TDFNW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-TDFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock17,049 |
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MOSFET (Metal Oxide) | 100 V | 35A (Ta), 267A (Tc) | - | 4V @ 650µA | 106 nC @ 10 V | 7630 pF @ 50 V | ±20V | - | 5.1W (Ta), 291W (Tc) | 1.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-TDFNW (8.3x8.4) | 8-PowerTDFN |
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onsemi |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-µDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Stock11,775 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | ±8V | Schottky Diode (Isolated) | 1W (Ta) | 112mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-µDFN (2x2) | 6-WDFN Exposed Pad |
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Nexperia USA Inc. |
55V N CH TRENCHFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 142W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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Package: - |
Stock4,695 |
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MOSFET (Metal Oxide) | 75 V | 150A (Ta) | 10V | 4V @ 1mA | 72 nC @ 10 V | 6000 pF @ 37.5 V | ±20V | - | 800mW (Ta), 142W (Tc) | 2.5mOhm @ 50A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 4V @ 250µA | 7.7 nC @ 10 V | 215 pF @ 25 V | ±30V | - | 2.5W (Ta), 28W (Tc) | 12Ohm @ 450mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 55V 260A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 55 V | 260A (Tc) | 10V | 4V @ 250µA | 140 nC @ 10 V | 10800 pF @ 25 V | ±20V | - | 480W (Tc) | 3.3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |