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Infineon Technologies |
MOSFET N-CH 600V TO-251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,224 |
|
MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,112 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | ±16V | - | 110W (Tc) | 13.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 30V 37A IPAK TRIMMED
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1203pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock60,732 |
|
MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 37A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15.4nC @ 10V | 1203pF @ 15V | ±20V | - | 1.37W (Ta), 27.3W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 250V 2A PW-MOLD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Ta)
- Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MOLD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 250V | 2A (Ta) | 10V | 3.5V @ 1mA | 24nC @ 10V | 381pF @ 10V | ±20V | - | 20W (Ta) | 2.55 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 1.7A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock120,636 |
|
MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | ±20V | - | 1W (Ta) | 185 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 22A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
|
Package: SC-94 |
Stock5,408 |
|
MOSFET (Metal Oxide) | 150V | 22A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | ±25V | - | 102W (Tc) | 90 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PF | SC-94 |
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|
Infineon Technologies |
MOSFET N-CH 250V 35A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
|
Package: DirectFET? Isometric L8 |
Stock4,320 |
|
MOSFET (Metal Oxide) | 250V | 375A (Tc) | 10V | 5V @ 250µA | 165nC @ 10V | 6714pF @ 25V | ±30V | - | 4.3W (Ta), 125W (Tc) | 38 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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|
Infineon Technologies |
MOSFET N-CH 30V 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock3,296 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2V @ 250µA | 7nC @ 4.5V | 890pF @ 15V | ±20V | - | 2.1W (Ta) | 7 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
|
|
IXYS |
MOSFET N-CH 600V 40A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock6,160 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 3.9V @ 2.5mA | 250nC @ 10V | - | ±20V | Super Junction | - | 70 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO251 IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,680 |
|
MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 325pF @ 100V | ±30V | - | 104W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Infineon Technologies |
MOSFET N-CH 650V 18A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,328 |
|
MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | ±20V | - | 72W (Tc) | 180 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
STMicroelectronics |
MOSFET N-CH 60V 55A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
- Vgs(th) (Max) @ Id: 4.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock249,024 |
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MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V, 5V | 4.7V @ 250µA | 37nC @ 4.5V | 1700pF @ 25V | ±16V | - | 95W (Tc) | 18 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Microsemi Corporation |
MOSFET N-CH 800V 41A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock59,016 |
|
MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | ±30V | - | 1040W (Tc) | 240 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 21A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock7,728 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 24nC @ 10V | 1500pF @ 15V | ±20V | - | 2.5W (Ta), 48W (Tc) | 2.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 32A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock107,568 |
|
MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | ±20V | - | 1.6W (Ta), 61W (Tc) | 8.8 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Texas Instruments |
MOSFET P-CH 8V 9DSBGA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 4V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 9-DSBGA
- Package / Case: 9-UFBGA, DSBGA
|
Package: 9-UFBGA, DSBGA |
Stock15,666 |
|
MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 950mV @ 250µA | 24.6nC @ 4.5V | 1130pF @ 4V | -6V | - | 1.7W (Ta) | 9.9 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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IXYS |
MOSFET N-CH 500V 55A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock5,856 |
|
MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | ±20V | - | 625W (Tc) | 90 mOhm @ 27.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock13,860 |
|
MOSFET (Metal Oxide) | 100 V | 13A (Ta), 32A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 40 nC @ 10 V | 1450 pF @ 50 V | ±20V | - | 5W (Ta), 30W (Tc) | 13.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET_)40V 60V)
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock5,400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 70.6W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 96A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 44.8 nC @ 10 V | 2479 pF @ 30 V | ±20V | - | 2.7W (Ta), 70.6W (Tc) | 4.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Rohm Semiconductor |
PCH -100V -50A POWER MOSFET: RD3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 101W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,436 |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 4V @ 1mA | 110 nC @ 10 V | 4620 pF @ 50 V | ±20V | - | 101W (Tc) | 41mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
PSMNR90-50SLH/SOT1235/LFPAK88
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 410A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 383 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 25001 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 375W (Ta)
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
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Package: - |
Stock11,988 |
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MOSFET (Metal Oxide) | 50 V | 410A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 383 nC @ 10 V | 25001 pF @ 25 V | ±20V | Schottky Diode (Isolated) | 375W (Ta) | 0.9mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 7.5 nC @ 4.5 V | 667 pF @ 10 V | ±12V | - | 800mW (Ta) | 25mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Wolfspeed, Inc. |
GEN 3 650V 45 M SIC MOSFET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock75 |
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SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | 1621 pF @ 600 V | +19V, -8V | - | 176W (Tc) | 60mOhm @ 17.6A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Micro Commercial Co |
N-CHANNEL MOSFET, DFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tj)
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333
- Package / Case: 8-VDFN Exposed Pad
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Package: - |
Stock29,925 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16 nC @ 10 V | 1220 pF @ 10 V | ±20V | - | 43W (Tj) | 18.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
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Micro Commercial Co |
N-CHANNEL MOSFET,TOLL-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10387 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tj)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL-8L
- Package / Case: 8-PowerSFN
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 80A (Tc) | 10V | 4V @ 250µA | 144 nC @ 10 V | 10387 pF @ 25 V | ±20V | - | 250W (Tj) | 13mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL-8L | 8-PowerSFN |
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Diodes Incorporated |
MOSFET N-CH 30V 100A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock7,362 |
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MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 39 nC @ 10 V | 2242 pF @ 15 V | ±20V | - | 42W (Tc) | 3.2mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Panjit International Inc. |
100V/ 2.8M / TOLL FOR INDUSTRAIL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 240A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,940 |
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MOSFET (Metal Oxide) | 100 V | 240A | 4.5V, 10V | - | 65 nC @ 10 V | - | ±20V | - | - | - | - | Surface Mount | TOLL | 8-PowerSFN |