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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,296 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | ±20V | - | 79W (Tc) | 115 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 30V 90A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock3,360 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5200pF @ 15V | ±20V | - | 115W (Tc) | 3.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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|
Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,048 |
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MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 80µA | 41nC @ 5V | 5199pF @ 15V | ±20V | - | 115W (Tc) | 3.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock78,000 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 0.9V, 2.5V | 800mV @ 1mA | 11nC @ 2.5V | 630pF @ 10V | ±5V | - | 1W (Ta) | 40 mOhm @ 2A, 2.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,152 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5708pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 203W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,696 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 97nC @ 10V | 5708pF @ 25V | ±20V | - | 203W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
NXP |
MOSFET N-CH 25V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,072 |
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MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 36nC @ 5V | 3140pF @ 25V | ±20V | - | 150W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Vishay Siliconix |
MOSFET N-CH 250V 4.4A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,576 |
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MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | - | 1.1 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
Infineon Technologies |
MOSFET N-CH 55V 140A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,144 |
|
MOSFET (Metal Oxide) | 55V | 140A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 3650pF @ 25V | ±20V | - | 330W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock6,348 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 155A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 71.3nC @ 10V | 4970pF @ 12V | ±20V | - | 900mW (Ta), 86.2W (Tc) | 2.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock5,312 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 23nC @ 10V | 1300pF @ 25V | ±20V | - | 3.6W (Ta), 50W (Tc) | 4.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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|
Diodes Incorporated |
MOSFET N-CH 30V 17.6A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock2,608 |
|
MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.6 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 950V 4A I2PAKFP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
|
Package: TO-262-3 Full Pack, I2Pak |
Stock13,728 |
|
MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | ±30V | - | 25W (Tc) | 3.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
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|
Infineon Technologies |
MOSFET N-CH 25V 16A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock40,104 |
|
MOSFET (Metal Oxide) | 25V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 10V | 1200pF @ 12V | ±20V | - | 2.1W (Ta), 37W (Tc) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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|
Rohm Semiconductor |
MOSFET N-CH 30V 28A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 28A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock5,536 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 94nC @ 10V | 5100pF @ 15V | ±20V | - | 3W (Ta), 30W (Tc) | 2.3 mOhm @ 28A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 12A HSMT8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock2,352 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 29nC @ 10V | 1500pF @ 15V | ±20V | - | 2W (Ta) | 9.3 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
|
|
Texas Instruments |
12V P-CHANNEL FEMTOFET MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 6V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PICOSTAR
- Package / Case: 3-XFDFN
|
Package: 3-XFDFN |
Stock18,168 |
|
MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | 628pF @ 6V | -6V | - | 500mW (Ta) | 35 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
|
|
STMicroelectronics |
MOSFET N-CH 600V I2PAK-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
|
Package: TO-262-3 Full Pack, I2Pak |
Stock9,252 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | ±25V | - | 25W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 0.33A X2DFN-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN0806-3
- Package / Case: 3-XFDFN
|
Package: 3-XFDFN |
Stock96,618 |
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MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.8nC @ 4.5V | 49pF @ 15V | ±8V | - | 360mW (Ta) | 1 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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ON Semiconductor |
MOSFET N-CH 30V 52A U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock5,344 |
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MOSFET (Metal Oxide) | 30V | 9.3A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | ±20V | - | 820mW (Ta), 25.5W (Tc) | 5.9 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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onsemi |
PCH+SBD 4V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Vishay Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 26.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
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Package: - |
Stock36,120 |
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MOSFET (Metal Oxide) | 30 V | 22A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 33 nC @ 10 V | 1650 pF @ 15 V | +20V, -16V | - | 3.5W (Ta), 26.5W (Tc) | 4.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Diodes Incorporated |
DIODE
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 230mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 430mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.97 nC @ 8 V | 47 pF @ 16 V | ±8V | - | 230mW (Ta) | 1.1Ohm @ 430mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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MOSLEADER |
P -20V SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Central Semiconductor Corp |
CEN1232 IC
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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MOSLEADER |
Single P -30V -4.8A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4.1A/20A 4DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN (8x8)
- Package / Case: 4-PowerTSFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4.1A (Ta), 20A (Tc) | 10V | 4V @ 250µA | 34 nC @ 10 V | 1935 pF @ 100 V | ±20V | - | 8.3W (Ta), 208W (Tc) | 210mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN (8x8) | 4-PowerTSFN |