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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock119,088 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 250µA | 37nC @ 10V | 920pF @ 25V | ±20V | - | 3.8W (Ta), 70W (Tc) | 90 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CH 25V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,736 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 6.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,608 |
|
MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 4 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 30A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock171,960 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta), 50A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 30nC @ 10V | 2380pF @ 15V | ±20V | - | 6.2W (Ta), 83W (Tc) | 4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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|
ON Semiconductor |
MOSFET N-CH 30V 4A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock2,352 |
|
MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | - | 4.7nC @ 4.5V | 430pF @ 10V | ±12V | - | 1W (Ta) | 50 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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|
NXP |
MOSFET N-CH 25V 75A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,408 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 26.7nC @ 5V | 2200pF @ 25V | ±20V | - | 115W (Tc) | 4.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 13.5A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 218W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock14,736 |
|
MOSFET (Metal Oxide) | 500V | 13.5A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | ±30V | - | 218W (Tc) | 480 mOhm @ 6.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.6A BGA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 742pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 9-BGA (1.5x1.6)
- Package / Case: 9-WFBGA
|
Package: 9-WFBGA |
Stock40,284 |
|
MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | 742pF @ 10V | ±12V | - | 1.7W (Ta) | 55 mOhm @ 4.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-BGA (1.5x1.6) | 9-WFBGA |
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|
STMicroelectronics |
MOSFET N-CH 40V 80A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,296 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 6.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 277.8W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,504 |
|
MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 5V @ 250µA | 90nC @ 10V | 1780pF @ 100V | ±30V | - | 277.8W (Tc) | 340 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 16A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 370 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock38,520 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 4.5V @ 250µA | 51nC @ 10V | 2297pF @ 25V | ±30V | - | 278W (Tc) | 370 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 30V 40A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock634,668 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 5V, 10V | 1V @ 250µA | 14nC @ 5V | 1434pF @ 25V | ±20V | - | 60W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,616 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A CST3B
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3B
- Package / Case: 3-SMD, No Lead
|
Package: 3-SMD, No Lead |
Stock81,744 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | - | - | 103 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 29.8W (Tc)
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock301,860 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1240pF @ 100V | ±30V | - | 29.8W (Tc) | 385 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock14,610 |
|
MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 3.5V @ 60µA | 6.7nC @ 10V | 140pF @ 100V | ±20V | - | 22W (Tc) | 2.1 Ohm @ 760mA, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 13.6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock350,160 |
|
MOSFET (Metal Oxide) | 60V | 13.6A (Tc) | 5V, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | ±20V | - | 45W (Tc) | 110 mOhm @ 6.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock632,376 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 50nC @ 4.5V | 5600pF @ 15V | ±20V | - | 5.4W (Ta) | 3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
Nexperia USA Inc. |
MOSFET N-CH 100V 21.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock324,210 |
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MOSFET (Metal Oxide) | 100V | 21.7A (Tc) | 10V | 4V @ 1mA | - | 1210pF @ 25V | ±20V | - | 89W (Tc) | 75 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET P-CH 20V 7A SOT23-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 3.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock6,656 |
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MOSFET (Metal Oxide) | 20V | 7A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 22nC @ 4.5V | 2390pF @ 16V | ±8V | - | 1.6W (Tc) | 22.5 mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 0.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 420mW (Ta)
- Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 1A (Ta) | 1.8V, 4.5V | 0.95V @ 250µA | 0.9 nC @ 4.5 V | 40.8 pF @ 25 V | ±8V | - | 420mW (Ta) | 460mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
POWER MOSFET, 60 V, 2.2 M?, 211
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Cambridge GaN Devices |
650V GAN HEMT, 130MOHM, DFN8X8.
- FET Type: -
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +20V, -1V
- FET Feature: Current Sensing
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 16-DFN (8x8)
- Package / Case: 16-PowerVDFN
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Package: - |
Stock10,056 |
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GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 12V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 182mOhm @ 900mA, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 16-DFN (8x8) | 16-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 75V 32A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 32A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 7.5 nC @ 4.5 V | 800 pF @ 50 V | ±20V | - | 50W (Tc) | 25mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Micro Commercial Co |
Interface
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W
- Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 5.41 nC @ 10 V | 438 pF @ 10 V | ±10V | - | 1W | 51mOhm @ 3.4A, 4.5V | -55°C ~ 150°C | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
PTNG 150V 15MOHM DPAK AUTOMOTIVE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 162µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,353 |
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MOSFET (Metal Oxide) | 150 V | 10.5A (Ta), 61.3A (Tc) | 10V | 4.5V @ 162µA | 27 nC @ 10 V | 2120 pF @ 75 V | ±20V | - | 3.1W (Ta), 107.1W (Tc) | 15mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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EPC |
Linear IC's
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 7-QFN (3x5)
- Package / Case: 7-PowerWQFN
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 150 V | 48A (Ta) | 5V | 2.5V @ 5mA | 13.8 nC @ 5 V | 2103 pF @ 75 V | +6V, -4V | - | - | 6mOhm @ 15A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | 7-QFN (3x5) | 7-PowerWQFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 980mW (Ta)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock5,850 |
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MOSFET (Metal Oxide) | 30 V | 19.8A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 2380 pF @ 15 V | ±25V | - | 980mW (Ta) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |