Page 1291 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

RJK0454DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 40A LFPAK

Package: SC-100, SOT-669

Stock4,448
MTB30P06VT4G
ON Semiconductor

MOSFET P-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock431,784
FDP8443
Fairchild/ON Semiconductor

MOSFET N-CH 40V 80A TO-220AB

Package: TO-220-3

Stock393,360
RFD4N06LSM9A
Fairchild/ON Semiconductor

MOSFET N-CH 60V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock88,788
FQU2N50BTU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock60,360
FQPF7N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 5A TO-220F

Package: TO-220-3 Full Pack

Stock2,336
IRL510S
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,504
STP8NM60
STMicroelectronics

MOSFET N-CH 650V 8A TO-220

Package: TO-220-3

Stock10,896
IPU60R1K0CEAKMA1
Infineon Technologies

MOSFET N-CH 600V TO-251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,520
IXFR180N06
IXYS

MOSFET N-CH 60V 180A ISOPLUS247

Package: ISOPLUS247?

Stock2,368
STD19NF06L
STMicroelectronics

MOSFET N-CH 60V DPAK

Package: -

Stock2,016
BSC039N06NSATMA1
Infineon Technologies

MOSFET N-CH 60V 19A TDSON-8

Package: 8-PowerTDFN

Stock3,760
AON6482
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 28A 5X6DFN

Package: 8-PowerSMD, Flat Leads

Stock1,200,000
IXTT82N25P
IXYS

MOSFET N-CH 250V 82A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,072
BSZ130N03LS G
Infineon Technologies

MOSFET N-CH 30V 35A TSDSON-8

Package: 8-PowerTDFN

Stock3,520
NTMFS4C55NT1G
ON Semiconductor

MOSFET N-CH 30V 78A SO8FL

Package: 8-PowerTDFN

Stock17,640
MCM1206-TP
Micro Commercial Co

MOSFET P-CH 12V 6A DFN202

Package: 6-WDFN Exposed Pad

Stock3,600
SI2325DS-T1-BE3
Vishay Siliconix

P-CHANNEL 150-V (D-S) MOSFET

Package: -

Stock5,946
SSM3J64CTC-L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 1A CST3C

Package: -

Stock59,319
RS1L180GNTB
Rohm Semiconductor

MOSFET N-CH 60V 18A/68A 8HSOP

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RJK0454DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,448	MOSFET (Metal Oxide)	40V	40A (Ta)	10V	-	25nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	4.9 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
MTB30P06VT4G	ON Semiconductor	MOSFET P-CH 60V 30A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock431,784	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	80nC @ 10V	2190pF @ 25V	±15V	-	3W (Ta), 125W (Tc)	80 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP8443	Fairchild/ON Semiconductor	MOSFET N-CH 40V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock393,360	MOSFET (Metal Oxide)	40V	20A (Ta), 80A (Tc)	10V	4V @ 250µA	185nC @ 10V	9310pF @ 25V	±20V	-	188W (Tc)	3.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
RFD4N06LSM9A	Fairchild/ON Semiconductor	MOSFET N-CH 60V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock88,788	MOSFET (Metal Oxide)	60V	4A (Tc)	5V	2.5V @ 250µA	8nC @ 10V	-	±10V	-	30W (Tc)	600 mOhm @ 1A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU2N50BTU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock60,360	MOSFET (Metal Oxide)	500V	1.6A (Tc)	10V	3.7V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	5.3 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQPF7N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,336	MOSFET (Metal Oxide)	200V	5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	37W (Tc)	750 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRL510S	Vishay Siliconix	MOSFET N-CH 100V 5.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,504	MOSFET (Metal Oxide)	100V	5.6A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	540 mOhm @ 3.4A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP8NM60	STMicroelectronics	MOSFET N-CH 650V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,896	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	400pF @ 25V	±30V	-	100W (Tc)	1 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPU60R1K0CEAKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,520	MOSFET (Metal Oxide)	600V	4.3A (Tc)	-	3.5V @ 130µA	13nC @ 10V	280pF @ 100V	-	-	-	1 Ohm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IXFR180N06	IXYS	MOSFET N-CH 60V 180A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,368	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 8mA	420nC @ 10V	7650pF @ 25V	±20V	-	560W (Tc)	5 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
STD19NF06L	STMicroelectronics	MOSFET N-CH 60V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,016	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC039N06NSATMA1	Infineon Technologies	MOSFET N-CH 60V 19A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,760	MOSFET (Metal Oxide)	60V	19A (Ta), 100A (Tc)	6V, 10V	2.8V @ 36µA	27nC @ 10V	2000pF @ 30V	±20V	-	2.5W (Ta), 69W (Tc)	3.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
AON6482	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 28A 5X6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock1,200,000	MOSFET (Metal Oxide)	100V	5.5A (Ta), 28A (Tc)	4.5V, 10V	2.7V @ 250µA	44nC @ 10V	2000pF @ 50V	±20V	-	2.5W (Ta), 63W (Tc)	37 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IXTT82N25P	IXYS	MOSFET N-CH 250V 82A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,072	MOSFET (Metal Oxide)	250V	82A (Tc)	10V	5V @ 250µA	142nC @ 10V	4800pF @ 25V	±20V	-	500W (Tc)	35 mOhm @ 41A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
BSZ130N03LS G	Infineon Technologies	MOSFET N-CH 30V 35A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,520	MOSFET (Metal Oxide)	30V	10A (Ta), 35A (Tc)	4.5V, 10V	2.2V @ 250µA	13nC @ 10V	970pF @ 15V	±20V	-	2.1W (Ta), 25W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
NTMFS4C55NT1G	ON Semiconductor	MOSFET N-CH 30V 78A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock17,640	MOSFET (Metal Oxide)	30V	11.9A (Ta), 78A (Tc)	4.5V, 10V	2.2V @ 250µA	30nC @ 10V	1972pF @ 15V	±20V	-	-	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
MCM1206-TP	Micro Commercial Co	MOSFET P-CH 12V 6A DFN202 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6J Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock3,600	MOSFET (Metal Oxide)	12V	6A (Ta)	1.8V, 4.5V	0.9V @ 250µA	7.8nC @ 4.5V	740pF @ 4V	±8V	-	-	45 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6J	6-WDFN Exposed Pad
SI2325DS-T1-BE3	Vishay Siliconix	P-CHANNEL 150-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,946	MOSFET (Metal Oxide)	150 V	530mA (Ta)	6V, 10V	4.5V @ 250µA	12 nC @ 10 V	510 pF @ 25 V	±20V	-	750mW (Ta)	1.2Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SSM3J64CTC-L3F	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 1A CST3C FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	Package: -	Stock59,319	MOSFET (Metal Oxide)	12 V	1A (Ta)	1.2V, 4.5V	1V @ 1mA	-	50 pF @ 10 V	±10V	-	500mW (Ta)	370mOhm @ 600mA, 4.5V	150°C	Surface Mount	CST3C	SC-101, SOT-883
RS1L180GNTB	Rohm Semiconductor	MOSFET N-CH 60V 18A/68A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	18A (Ta), 68A (Tc)	4.5V, 10V	2.5V @ 100µA	63 nC @ 10 V	3230 pF @ 30 V	±20V	-	3W (Ta)	5.6mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
SIR4604DP-T1-GE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 49.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,364	MOSFET (Metal Oxide)	60 V	15.1A (Ta), 49.3A (Tc)	7.5V, 10V	4V @ 250µA	22 nC @ 10 V	960 pF @ 30 V	±20V	-	3.9W (Ta), 41.6W (Tc)	9.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSS84AKQBZ	Nexperia USA Inc.	BSS84AKQB/SOT8015/DFN1110D-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Vgs (Max): +12V, -20V FET Feature: - Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: DFN1110D-3 Package / Case: 3-XDFN Exposed Pad	Package: -	Stock45,747	MOSFET (Metal Oxide)	50 V	270mA (Ta)	4.5V, 10V	2.1V @ 250µA	0.6 nC @ 10 V	23.2 pF @ 25 V	+12V, -20V	-	420mW (Ta), 4.2W (Tc)	7.5Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	DFN1110D-3	3-XDFN Exposed Pad
SQM40P10-40L_GE3	Vishay Siliconix	MOSFET P-CH 100V 40A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	134 nC @ 10 V	5295 pF @ 25 V	±20V	-	150W (Tc)	40mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DI150N03PQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	2.5V @ 250µA	163 nC @ 10 V	7460 pF @ 15 V	±20V	-	80W (Tc)	1.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
TK12A50E-S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	12A (Ta)	10V	4V @ 1.2mA	40 nC @ 10 V	1300 pF @ 25 V	±30V	-	45W (Tc)	520mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TSM019NH04CR-RLG	Taiwan Semiconductor Corporation	40V, 100A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	35A (Ta), 100A (Tc)	7V, 10V	3.6V @ 250µA	89 nC @ 10 V	6029 pF @ 25 V	±20V	-	150W (Tc)	1.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFNU (5x6)	8-PowerTDFN
STS3401-ML	MOSLEADER	Single-P -30V -3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH7107TR2PBF	Infineon Technologies	MOSFET N-CH 75V 14A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	14A (Ta), 75A (Tc)	-	4V @ 100µA	72 nC @ 10 V	3110 pF @ 25 V	-	-	-	8.5mOhm @ 45A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN