Page 1292 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD26N06S2L-35
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock690,696
IRFS4610PBF
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock37,452
IRFZ34NL
Infineon Technologies

MOSFET N-CH 55V 29A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,424
FDB8444TS
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A D2PAK-5

Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Stock3,440
NTD50N03R-035
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock46,800
FDU8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 160A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,528
AUIRF3504
Infineon Technologies

MOSFET N-CH 40V 87A TO-220AB

Package: TO-220-3

Stock63,012
IXKP20N60C5M
IXYS

MOSFET N-CH 600V 7.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock3,824
MCH6436-TL-W
ON Semiconductor

MOSFET N-CH 30V 6A MCPH6

Package: 6-SMD, Flat Leads

Stock5,936
R5009FNJTL
Rohm Semiconductor

MOSFET N-CH 500V 9A LPT

Package: SC-83

Stock4,240
IRFB4310ZPBF
Infineon Technologies

MOSFET N-CH 100V 120A TO-220AB

Package: TO-220-3

Stock20,916
HUF75545P3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-220AB

Package: TO-220-3

Stock15,384
DMN4800LSSQ-13
Diodes Incorporated

MOSFET N-CH 30V 8.6A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,408
RQ3E080BNTB
Rohm Semiconductor

MOSFET N-CH 30V 8A HSMT8

Package: 8-PowerVDFN

Stock6,496
SIB441EDK-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 9A PPAK SC75-6L

Package: PowerPAK? SC-75-6L

Stock118,686
IMBG120R053M2HXTMA1
Infineon Technologies

SIC DISCRETE

Package: -

Stock2,682
APT30M36JFLL
Microchip Technology

MOSFET N-CH 300V 76A ISOTOP

Package: -

Request a Quote
NTTFS6H880NLTAG
onsemi

MOSFET N-CH 80V 6.6A/22A 8WDFN

Package: -

Request a Quote
IPP230N06L3GXKSA1
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
G3R160MT17J
GeneSiC Semiconductor

SIC MOSFET N-CH 18A TO263-7

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD26N06S2L-35	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock690,696	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 26µA	24nC @ 10V	790pF @ 25V	±20V	-	68W (Tc)	35 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS4610PBF	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock37,452	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ34NL	Infineon Technologies	MOSFET N-CH 55V 29A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,424	MOSFET (Metal Oxide)	55V	29A (Tc)	10V	4V @ 250µA	34nC @ 10V	700pF @ 25V	±20V	-	3.8W (Ta), 68W (Tc)	40 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FDB8444TS	Fairchild/ON Semiconductor	MOSFET N-CH 40V 70A D2PAK-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-5 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Stock3,440	MOSFET (Metal Oxide)	40V	20A (Ta), 70A (Tc)	10V	4V @ 250µA	338nC @ 20V	8410pF @ 25V	±20V	-	181W (Tc)	5 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-5	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
NTD50N03R-035	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock46,800	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
FDU8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 160A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,528	MOSFET (Metal Oxide)	30V	21A (Ta), 160A (Tc)	4.5V, 10V	2.5V @ 250µA	118nC @ 10V	5160pF @ 15V	±20V	-	160W (Tc)	3.9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
AUIRF3504	Infineon Technologies	MOSFET N-CH 40V 87A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock63,012	MOSFET (Metal Oxide)	40V	87A (Tc)	10V	4V @ 100µA	54nC @ 10V	2150pF @ 25V	±20V	-	143W (Tc)	9.2 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXKP20N60C5M	IXYS	MOSFET N-CH 600V 7.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ABFP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock3,824	MOSFET (Metal Oxide)	600V	7.6A (Tc)	10V	3.5V @ 1.1mA	30nC @ 10V	1520pF @ 100V	±20V	Super Junction	-	200 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220ABFP	TO-220-3 Full Pack, Isolated Tab
MCH6436-TL-W	ON Semiconductor	MOSFET N-CH 30V 6A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock5,936	MOSFET (Metal Oxide)	30V	6A (Ta)	1.8V, 4.5V	1.3V @ 1mA	7.5nC @ 4.5V	710pF @ 10V	±12V	-	1.5W (Ta)	34 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
R5009FNJTL	Rohm Semiconductor	MOSFET N-CH 500V 9A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 840 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock4,240	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 1mA	18nC @ 10V	630pF @ 25V	±30V	-	50W (Tc)	840 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
IRFB4310ZPBF	Infineon Technologies	MOSFET N-CH 100V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,916	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	250W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUF75545P3	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,384	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4V @ 250µA	235nC @ 20V	3750pF @ 25V	±20V	-	270W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN4800LSSQ-13	Diodes Incorporated	MOSFET N-CH 30V 8.6A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.46W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,408	MOSFET (Metal Oxide)	30V	8.6A (Ta)	4.5V, 10V	1.6V @ 250µA	8.7nC @ 5V	798pF @ 10V	±25V	-	1.46W (Ta)	14 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RQ3E080BNTB	Rohm Semiconductor	MOSFET N-CH 30V 8A HSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,496	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2.5V @ 1mA	14.5nC @ 10V	660pF @ 15V	±20V	-	2W (Ta)	15.2 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
SIB441EDK-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 9A PPAK SC75-6L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock118,686	MOSFET (Metal Oxide)	12V	9A (Tc)	1.5V, 4.5V	900mV @ 250µA	33nC @ 8V	1180pF @ 6V	±8V	-	2.4W (Ta), 13W (Tc)	25.5 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
IMBG120R053M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,682	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT30M36JFLL	Microchip Technology	MOSFET N-CH 300V 76A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	76A (Tc)	-	5V @ 2.5mA	115 nC @ 10 V	6480 pF @ 25 V	-	-	-	36mOhm @ 38A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
NTTFS6H880NLTAG	onsemi	MOSFET N-CH 80V 6.6A/22A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	6.6A (Ta), 22A (Tc)	4.5V, 10V	2V @ 20µA	9 nC @ 10 V	431 pF @ 40 V	±20V	-	3.1W (Ta), 33W (Tc)	29mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IPP230N06L3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A	4.5V, 10V	2.2V @ 11µA	7 nC @ 4.5 V	1200 pF @ 30 V	±20V	-	36W	23mOhm @ 30A, 10V	-55°C ~ 175°C	Through Hole	PG-TO220-3	TO-220-3
G3R160MT17J	GeneSiC Semiconductor	SIC MOSFET N-CH 18A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1700 V	18A (Tc)	15V	2.7V @ 5mA	29 nC @ 15 V	854 pF @ 1000 V	±15V	-	187W (Tc)	208mOhm @ 12A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
ICE15N60FP	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	3.9V @ 250µA	59 nC @ 10 V	2064 pF @ 25 V	±20V	-	35W (Tc)	250mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack, Isolated Tab
XP9452GG	YAGEO XSEMI	MOSFET N-CH 20V 4A SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: -	Stock2,940	MOSFET (Metal Oxide)	20 V	4A (Ta)	2.5V, 10V	1.5V @ 250µA	10 nC @ 4.5 V	570 pF @ 20 V	±16V	-	1.25W (Ta)	38mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89	TO-243AA
IRF244	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	8.8A (Tc)	10V	4V @ 250µA	59 nC @ 10 V	1300 pF @ 25 V	±20V	-	125W (Tc)	280mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AA, TO-3
DMP3165LQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,400	MOSFET (Metal Oxide)	30 V	3.3A (Ta)	4.5V, 10V	2.1V @ 250µA	2 nC @ 10 V	300 pF @ 10 V	±20V	-	800mW (Ta)	90mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BUK9C10-55BIT-A-11	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4667 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 194W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	75A (Ta)	4.5V, 10V	2V @ 1mA	51 nC @ 5 V	4667 pF @ 25 V	±15V	-	194W (Ta)	9mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-7, D2PAK (6 Leads + Tab)
BUK6D385-100EX	Nexperia USA Inc.	MOSFET N-CH 100V 1.4A/3.7A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock83,970	MOSFET (Metal Oxide)	100 V	1.4A (Ta), 3.7A (Tc)	4.5V, 10V	2.7V @ 250µA	6.8 nC @ 10 V	195 pF @ 50 V	±20V	-	2W (Ta), 15W (Tc)	385mOhm @ 1.5, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
RJK4007DPP-G2-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MTD4N20E1	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-