Page 1300 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

PMZB790SN,315
Nexperia USA Inc.

MOSFET N-CH 60V SGL 3DFN

Package: 3-XFDFN

Stock3,440
JAN2N6762
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AA, TO-3

Stock5,600
PMT200EN,115
NXP

MOSFET N-CH 100V 1.8A SC-73

Package: TO-261-4, TO-261AA

Stock5,040
ZXMP10A18K
Diodes Incorporated

MOSFET P-CH 100V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,660
IXTH50P085
IXYS

MOSFET P-CH 85V 50A TO-247AD

Package: TO-247-3

Stock19,800
FDS4070N7
Fairchild/ON Semiconductor

MOSFET N-CH 40V 15.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,216
IPP100N04S4H2AKSA1
Infineon Technologies

MOSFET N-CH 40V 100A TO220-3-1

Package: TO-220-3

Stock2,704
IXFN40N90P
IXYS

MOSFET N-CH 900V 33A SOT227

Package: SOT-227-4, miniBLOC

Stock4,496
VN1206L-G-P002
Microchip Technology

MOSFET N-CH 120V 0.23A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,312
NVTFS4C08NWFTAG
ON Semiconductor

MOSFET N-CH 30V 55A U8FL

Package: 8-PowerWDFN

Stock6,256
RSS050P03TB
Rohm Semiconductor

MOSFET P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,188,120
STL25N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 16A MLPD8X8 4L

Package: 8-PowerVDFN

Stock7,248
BSP318SH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 2.6A

Package: TO-261-4, TO-261AA

Stock19,476
FDMC7572S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 40A POWER33

Package: 8-PowerTDFN

Stock7,020
STF33N65M2
STMicroelectronics

MOSFET N-CH 650V 24A TO220FP

Package: TO-220-3 Full Pack

Stock16,548
CES2320-ML
MOSLEADER

Single N 30V 5.2A SOT-23

Package: -

Request a Quote
SIHB6N80AE-GE3
Vishay Siliconix

E SERIES POWER MOSFET D2PAK (TO-

Package: -

Stock3,120
MTSF2P03HDR2
Motorola

MTSF2P03 - TRANS MOSFET P-CH 30V

Package: -

Request a Quote
SCTH60N120G2-7
STMicroelectronics

SICFET N-CH 1200V 60A H2PAK-7

Package: -

Request a Quote
DI072N06PT
Diotec Semiconductor

IC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PMZB790SN,315	Nexperia USA Inc.	MOSFET N-CH 60V SGL 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 940 mOhm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock3,440	MOSFET (Metal Oxide)	60V	650mA (Ta)	4.5V, 10V	3V @ 250µA	1.37nC @ 10V	35pF @ 30V	±20V	-	360mW (Ta), 2.7W (Tc)	940 mOhm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006B (0.6x1)	3-XFDFN
JAN2N6762	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock5,600	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	40nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	1.8 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
PMT200EN,115	NXP	MOSFET N-CH 100V 1.8A SC-73 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,040	MOSFET (Metal Oxide)	100V	1.8A (Ta)	4.5V, 10V	2.5V @ 250µA	10nC @ 10V	475pF @ 80V	±20V	-	800mW (Ta), 8.3W (Tc)	235 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZXMP10A18K	Diodes Incorporated	MOSFET P-CH 100V 3.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.17W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,660	MOSFET (Metal Oxide)	100V	3.8A (Ta)	6V, 10V	4V @ 250µA	26.9nC @ 10V	1055pF @ 50V	±20V	-	2.17W (Ta)	150 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTH50P085	IXYS	MOSFET P-CH 85V 50A TO-247AD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock19,800	MOSFET (Metal Oxide)	85V	50A (Tc)	10V	5V @ 250µA	150nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	55 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
FDS4070N7	Fairchild/ON Semiconductor	MOSFET N-CH 40V 15.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2819pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,216	MOSFET (Metal Oxide)	40V	15.3A (Ta)	10V	5V @ 250µA	67nC @ 10V	2819pF @ 20V	±20V	-	3W (Ta)	7 mOhm @ 15.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPP100N04S4H2AKSA1	Infineon Technologies	MOSFET N-CH 40V 100A TO220-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,704	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 70µA	90nC @ 10V	7180pF @ 25V	±20V	-	115W (Tc)	2.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFN40N90P	IXYS	MOSFET N-CH 900V 33A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,496	MOSFET (Metal Oxide)	900V	33A	10V	6.5V @ 1mA	230nC @ 10V	14000pF @ 25V	±30V	-	695W (Tc)	210 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
VN1206L-G-P002	Microchip Technology	MOSFET N-CH 120V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,312	MOSFET (Metal Oxide)	120V	230mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±30V	-	1W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NVTFS4C08NWFTAG	ON Semiconductor	MOSFET N-CH 30V 55A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,256	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	2.2V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	3.1W (Ta), 31W (Tc)	5.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
RSS050P03TB	Rohm Semiconductor	MOSFET P-CH 30V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,188,120	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	13nC @ 5V	1200pF @ 10V	±20V	-	2W (Ta)	42 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
STL25N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 16A MLPD8X8 4L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,248	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	29nC @ 10V	1090pF @ 100V	±25V	-	125W (Tc)	205 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
BSP318SH6327XTSA1	Infineon Technologies	MOSFET N-CH 60V 2.6A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock19,476	MOSFET (Metal Oxide)	60V	2.6A (Tj)	4.5V, 10V	2V @ 20µA	20nC @ 10V	380pF @ 25V	±20V	-	1.8W (Ta)	90 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
FDMC7572S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 40A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2705pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.15 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,020	MOSFET (Metal Oxide)	25V	22.5A (Ta), 40A (Tc)	4.5V, 10V	3V @ 1mA	44nC @ 10V	2705pF @ 13V	±20V	-	2.3W (Ta), 52W (Tc)	3.15 mOhm @ 22.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
STF33N65M2	STMicroelectronics	MOSFET N-CH 650V 24A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,548	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	41.5nC @ 10V	1790pF @ 100V	±25V	-	34W (Tc)	140 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
CES2320-ML	MOSLEADER	Single N 30V 5.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB6N80AE-GE3	Vishay Siliconix	E SERIES POWER MOSFET D2PAK (TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,120	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	4V @ 250µA	22.5 nC @ 10 V	422 pF @ 100 V	±30V	-	62.5W (Tc)	950mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MTSF2P03HDR2	Motorola	MTSF2P03 - TRANS MOSFET P-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCTH60N120G2-7	STMicroelectronics	SICFET N-CH 1200V 60A H2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	5V @ 1mA	94 nC @ 18 V	1969 pF @ 800 V	+22V, -10V	-	390W (Tc)	52mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DI072N06PT	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	72A (Tc)	4.5V, 10V	2.5V @ 250µA	35 nC @ 10 V	1990 pF @ 30 V	±20V	-	43W (Tc)	4.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
IRF9630PBF-BE3	Vishay Siliconix	MOSFET P-CH 200V 6.5A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock5,406	MOSFET (Metal Oxide)	200 V	6.5A (Tc)	-	4V @ 250µA	29 nC @ 10 V	700 pF @ 25 V	±20V	-	74W (Tc)	800mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MMFTN170	Diotec Semiconductor	MOSFET N-CH 60V 500MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock9,000	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	3V @ 1mA	-	40 pF @ 10 V	±20V	-	300mW (Ta)	5Ohm @ 200mA, 10V	150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFN120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMNH6042SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	24A (Tc)	4.5V, 10V	3V @ 250µA	8.8 nC @ 10 V	584 pF @ 25 V	±20V	-	1.5W (Ta)	50mOhm @ 5.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
NTMFS3D6N10MCLT1G	onsemi	MOSFET N-CH 100V 19.5A/131A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,480	MOSFET (Metal Oxide)	100 V	19.5A (Ta), 131A (Tc)	4.5V, 10V	3V @ 270µA	60 nC @ 10 V	4411 pF @ 50 V	±20V	-	3W (Ta), 136W (Tc)	3.6mOhm @ 48A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
TSM060NB06CZ	Taiwan Semiconductor Corporation	60V, 111A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	13A (Ta), 111A (Tc)	7V, 10V	4V @ 250µA	103 nC @ 10 V	6842 pF @ 30 V	±20V	-	2W (Ta), 156W (Tc)	6mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SISS54DN-T1-GE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock24,987	MOSFET (Metal Oxide)	30 V	51.1A (Ta), 185.6A (Tc)	4.5V, 10V	2.2V @ 250µA	72 nC @ 10 V	3450 pF @ 15 V	+16V, -12V	-	5W (Ta), 65.7W (Tc)	1.06mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
MMFTN3479KW	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	1.3V @ 250µA	2.8 nC @ 4.5 V	260 pF @ 10 V	±12V	-	900mW (Ta)	64mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323