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Infineon Technologies |
MOSFET N-CH 650V 6.6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,328 |
|
MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 5V @ 300µA | 47nC @ 10V | 790pF @ 25V | ±20V | - | 83W (Tc) | 700 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 2.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock180,000 |
|
MOSFET (Metal Oxide) | 150V | 2.6A (Ta) | 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | ±30V | - | 2.8W (Ta) | 185 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 54A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,816 |
|
MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 1V @ 250µA | 44nC @ 4.5V | 2300pF @ 25V | ±16V | - | 2W (Ta), 70W (Tc) | 14 mOhm @ 32A, 10V | - | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 600V 0.2A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 16.5 Ohm @ 100mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 Short Body
|
Package: TO-226-3, TO-92-3 Short Body |
Stock6,464 |
|
MOSFET (Metal Oxide) | 600V | 200mA (Ta) | 10V | - | 4.8nC @ 10V | 66pF @ 25V | ±30V | - | 750mW (Ta) | 16.5 Ohm @ 100mA, 10V | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 Short Body |
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Vishay Siliconix |
MOSFET P-CH 12V 4.5A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock36,000 |
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MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 14nC @ 4.5V | - | ±8V | - | 1.1W (Ta) | 40 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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IXYS |
MOSFET N-CH 175V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 175V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,840 |
|
MOSFET (Metal Oxide) | 175V | 150A (Tc) | 10V | 5V @ 3mA | 155nC @ 10V | 9800pF @ 25V | - | - | 830W (Tc) | 12 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 46A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,200 |
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MOSFET (Metal Oxide) | 100V | 46A (Tc) | 4.5V, 10V | 2V @ 1mA | 33nC @ 5V | 4360pF @ 25V | ±15V | - | 157W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 25V 75A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 4.95 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,592 |
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MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 26.7nC @ 5V | 2200pF @ 25V | ±20V | - | 115W (Tc) | 4.95 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 5.8A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock6,512 |
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MOSFET (Metal Oxide) | 600V | 5.8A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 1900pF @ 25V | ±30V | - | 55W (Tc) | 700 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 23A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,656 |
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MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 3600pF @ 25V | ±30V | - | 370W (Tc) | 235 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 179A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4267pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 65A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? M4
- Package / Case: DirectFET? Isometric M4
|
Package: DirectFET? Isometric M4 |
Stock5,264 |
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MOSFET (Metal Oxide) | 40V | 22A (Ta), 108A (Tc) | 10V | 4V @ 150µA | 108nC @ 10V | 4267pF @ 25V | ±20V | - | 2.5W (Ta), 63W (Tc) | 3 mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET? M4 | DirectFET? Isometric M4 |
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Fairchild/Micross Components |
DIE MOSFET N-CH 100V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock7,472 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 26A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,136 |
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MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 850pF @ 25V | ±20V | - | 3.6W (Ta), 39W (Tc) | 24 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock13,680 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | - | 2.1V @ 250µA | 1.9nC @ 4.5V | 1252pF @ 15V | - | - | 760mW (Ta) | 5.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET P-CH 8V 9A SC-75-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? TSC75-6
- Package / Case: PowerPAK? TSC-75-6
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Package: PowerPAK? TSC-75-6 |
Stock9,576 |
|
MOSFET (Metal Oxide) | 8V | 9A (Tc) | 1.2V, 4.5V | 700mV @ 250µA | 16nC @ 4.5V | - | ±5V | - | 2.4W (Ta), 13W (Tc) | 34 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? TSC75-6 | PowerPAK? TSC-75-6 |
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IXYS |
MOSFET N-CH 600V 48A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,112 |
|
MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 6.5V @ 4mA | 140nC @ 10V | 7020pF @ 25V | ±30V | - | 1000W (Tc) | 140 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock16,248 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET P-CH 20V 4A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock134,508 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 29nC @ 4.5V | 2600pF @ 15V | ±8V | - | 700mW (Ta) | 29 mOhm @ 6.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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|
STMicroelectronics |
MOSFET N-CH 800V 8POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock7,040 |
|
MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | ±30V | - | 42W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET N-CH 100V 45A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock390,360 |
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MOSFET (Metal Oxide) | 100V | 45A (Tc) | 6V, 10V | 3.5V @ 75µA | 55nC @ 10V | 3980pF @ 50V | ±20V | - | 37.5W (Tc) | 8.6 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Rectron USA |
MOSFET P-CHANNEL 12V 6A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 2.5V, 4.5V | 1V @ 250µA | - | 1100 pF @ 6 V | ±12V | - | 1.8W (Ta) | 30mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET COOL MOS 600V SAWED WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -100A, -30
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PPAK (5.1x5.71)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock8,610 |
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MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 210 nC @ 10 V | 12000 pF @ 25 V | ±20V | - | 138W (Tc) | 3.3mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (5.1x5.71) | 8-PowerTDFN |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 50 V | 4A (Tc) | 10V | 4V @ 250µA | - | 200 pF @ 25 V | ±20V | - | 25W (Tc) | 800mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
800V, 6A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 4V @ 250µA | 19.6 nC @ 10 V | 691 pF @ 100 V | ±30V | - | 110W (Tc) | 950mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA |
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onsemi |
SIC MOS D2PAK-7L 650V
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 395W (Tc)
- Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 106A (Tc) | 15V, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | 3480 pF @ 325 V | - | - | 395W (Tc) | 28.5mOhm @ 45A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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onsemi |
MOSFET N-CH 60V 22A/100A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 34 nC @ 10 V | 2200 pF @ 50 V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock17,235 |
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MOSFET (Metal Oxide) | 30 V | 27.6A (Ta), 40A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 58 nC @ 10 V | 2455 pF @ 15 V | +20V, -16V | - | 3.7W (Ta), 46.3W (Tc) | 2.7mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |