Page 1305 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOD256_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 19A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,504
AO4442
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 3.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,896
FQA5N90_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 5.8A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,072
FQP3N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 3.6A TO-220

Package: TO-220-3

Stock24,000
FQI9N08LTU
Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,840
IRC644PBF
Vishay Siliconix

MOSFET N-CH 250V 14A TO-220-5

Package: TO-220-5

Stock7,840
STP60N55F3
STMicroelectronics

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock848,496
BSC065N06LS5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock5,936
IPD50N06S4L08ATMA2
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,280
IXFR140N20P
IXYS

MOSFET N-CH 200V 90A ISOPLUS247

Package: ISOPLUS247?

Stock3,120
BTS282ZE3180AATMA2
Infineon Technologies

MOSFET N-CH 49V 80A TO-220-7

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock6,208
AOW10N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 10A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,120
3LP01C-TB-E
ON Semiconductor

MOSFET P-CH 30V 100MA CP

Package: TO-236-3, SC-59, SOT-23-3

Stock1,269,564
IRLL2705TRPBF
Infineon Technologies

MOSFET N-CH 55V 3.8A SOT223

Package: TO-261-4, TO-261AA

Stock296,160
PMV90ENER
Nexperia USA Inc.

PMV90ENE/TO-236AB/REEL 7" Q3/T

Package: TO-236-3, SC-59, SOT-23-3

Stock2,304
SI7119DN-T1-E3
Vishay Siliconix

MOSFET P-CH 200V 3.8A 1212-8

Package: PowerPAK? 1212-8

Stock5,216
IRFL110TRPBF
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

Package: TO-261-4, TO-261AA

Stock252,960
DMP2160U-7
Diodes Incorporated

MOSFET P-CH 20V 3.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock42,360
MCG20P06-TP
Micro Commercial Co

MOSFET

Package: -

Request a Quote
SSS6N70A
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOD256_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 19A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,504	MOSFET (Metal Oxide)	150V	3A (Ta), 19A (Tc)	4.5V, 10V	2.8V @ 250µA	22nC @ 10V	1165pF @ 75V	±20V	-	2.5W (Ta), 83W (Tc)	85 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4442	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 75V 3.1A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 37.5V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,896	MOSFET (Metal Oxide)	75V	3.1A (Ta)	4.5V, 10V	3V @ 250µA	6.5nC @ 10V	350pF @ 37.5V	±25V	-	3.1W (Ta)	130 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FQA5N90_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 5.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 185W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,072	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	±30V	-	185W (Tc)	2.3 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQP3N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 3.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock24,000	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	5V @ 250µA	26nC @ 10V	910pF @ 25V	±30V	-	130W (Tc)	4.25 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQI9N08LTU	Fairchild/ON Semiconductor	MOSFET N-CH 80V 9.3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,840	MOSFET (Metal Oxide)	80V	9.3A (Tc)	5V, 10V	2V @ 250µA	6.1nC @ 5V	280pF @ 25V	±20V	-	3.75W (Ta), 40W (Tc)	210 mOhm @ 4.65A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
IRC644PBF	Vishay Siliconix	MOSFET N-CH 250V 14A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock7,840	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	65nC @ 10V	1200pF @ 25V	±20V	Current Sensing	125W (Tc)	280 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
STP60N55F3	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock848,496	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	45nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	8.5 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSC065N06LS5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,936	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD50N06S4L08ATMA2	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,280	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	2.2V @ 35µA	64nC @ 10V	4780pF @ 25V	±16V	-	71W (Tc)	7.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFR140N20P	IXYS	MOSFET N-CH 200V 90A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,120	MOSFET (Metal Oxide)	200V	90A (Tc)	10V	5V @ 4mA	240nC @ 10V	7500pF @ 25V	±20V	-	300W (Tc)	22 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
BTS282ZE3180AATMA2	Infineon Technologies	MOSFET N-CH 49V 80A TO-220-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 49V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-1 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock6,208	MOSFET (Metal Oxide)	49V	80A (Tc)	4.5V, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	±20V	Temperature Sensing Diode	300W (Tc)	6.5 mOhm @ 36A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-1	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
AOW10N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 10A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,120	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 250µA	33nC @ 10V	1645pF @ 25V	±30V	-	250W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
3LP01C-TB-E	ON Semiconductor	MOSFET P-CH 30V 100MA CP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,269,564	MOSFET (Metal Oxide)	30V	100mA (Ta)	1.5V, 4V	-	1.43nC @ 10V	7.5pF @ 10V	±10V	-	250mW (Ta)	10.4 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
IRLL2705TRPBF	Infineon Technologies	MOSFET N-CH 55V 3.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock296,160	MOSFET (Metal Oxide)	55V	3.8A (Ta)	4V, 10V	2V @ 250µA	48nC @ 10V	870pF @ 25V	±16V	-	1W (Ta)	40 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PMV90ENER	Nexperia USA Inc.	PMV90ENE/TO-236AB/REEL 7" Q3/T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,304	MOSFET (Metal Oxide)	30V	3A (Ta)	4.5V, 10V	2.5V @ 250µA	5.5nC @ 10V	160pF @ 15V	±20V	-	460mW (Ta)	72 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SI7119DN-T1-E3	Vishay Siliconix	MOSFET P-CH 200V 3.8A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,216	MOSFET (Metal Oxide)	200V	3.8A (Tc)	6V, 10V	4V @ 250µA	25nC @ 10V	666pF @ 50V	±20V	-	3.7W (Ta), 52W (Tc)	1.05 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IRFL110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock252,960	MOSFET (Metal Oxide)	100V	1.5A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	540 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
DMP2160U-7	Diodes Incorporated	MOSFET P-CH 20V 3.2A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock42,360	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	-	627pF @ 10V	±12V	-	1.4W (Ta)	80 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
MCG20P06-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Tc)	4.5V, 10V	3V @ 250µA	23 nC @ 10 V	1533 pF @ 25 V	±20V	-	25W (Tj)	25mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
SSS6N70A	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	4V @ 250µA	67 nC @ 10 V	1200 pF @ 25 V	±30V	-	40W (Tc)	1.8Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
DMTH8008SFG-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17A (Ta), 68A (Tc)	6V, 10V	4V @ 1mA	31.7 nC @ 10 V	1945 pF @ 40 V	±20V	-	1.2W (Ta), 50W (Tc)	7mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
IMT65R048M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock5,913	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
SPD04N60C3	Infineon Technologies	MOSFET N-CH 600V 4.5A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.5A (Tc)	10V	3.9V @ 200µA	25 nC @ 10 V	490 pF @ 25 V	±20V	-	50W (Tc)	950mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN4020LFDEQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	8.6A (Ta)	4.5V, 10V	2.4V @ 250µA	25.3 nC @ 10 V	1201 pF @ 20 V	±20V	-	850mW (Ta)	21mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
IPQC60R017S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	4.5V @ 1.89mA	196 nC @ 12 V	7370 pF @ 300 V	±20V	-	500W (Tc)	17mOhm @ 29A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
RX3G18BBGC16	Rohm Semiconductor	NCH 40V 180A, TO-220AB, POWER MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 1.47mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,958	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	2.5V @ 1mA	210 nC @ 10 V	13200 pF @ 20 V	±20V	-	192W (Tc)	1.47mOhm @ 90A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
GT1003A	Goford Semiconductor	N100V, 3A,RD<140M@10V,VTH1.0V~3. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock6,771	MOSFET (Metal Oxide)	100 V	3A (Tc)	10V	3V @ 250µA	4.3 nC @ 10 V	206 pF @ 50 V	±20V	-	1.6W (Tc)	140mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SIHG026N60EF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 521W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	95A (Tc)	10V	5V @ 250µA	227 nC @ 10 V	7926 pF @ 100 V	±30V	-	521W (Tc)	26mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3