Page 1311 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPS075N03LGBKMA1
Infineon Technologies

MOSFET N-CHANNEL 30V 50A TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock2,144
IRF7807D1PBF
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,344
SI1300BDL-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 400MA SC-70-3

Package: SC-70, SOT-323

Stock577,224
IRFR120TRR
Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,504
STD8NM60ND
STMicroelectronics

MOSFET N-CH 600V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,936
AUIRFS4115TRL
Infineon Technologies

MOSFET N-CH 150V 99A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,536
DMT6009LFG-13
Diodes Incorporated

MOSFET N-CH 60V 11A POWERDI3333-

Package: 8-PowerWDFN

Stock3,808
BUK7Y29-40EX
Nexperia USA Inc.

MOSFET N-CH 40V 26A LFPAK

Package: SC-100, SOT-669

Stock3,376
IRFH5104TR2PBF
Infineon Technologies

MOSFET N-CH 40V 24A PQFN

Package: 8-VQFN Exposed Pad

Stock7,668
IRFP150MPBF
Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

Package: TO-247-3

Stock4,416
RCJ700N20TL
Rohm Semiconductor

MOSFET N-CH 200V 70A LPTS

Package: SC-83

Stock13,584
FDMC2674
Fairchild/ON Semiconductor

MOSFET N-CH 220V 1A 3.3SQ MLP

Package: 8-PowerWDFN

Stock648,720
DMG4435SSS-13
Diodes Incorporated

MOSFET P-CH 30V 7.3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock540,492
SIHS90N65E-E3
Vishay Siliconix

MOSFET N-CH 650V 87A SUPER247

Package: TO-247-3

Stock16,788
SIHA21N60EF-E3
Vishay Siliconix

MOSFET N-CH 600V 21A TO-220 FP

Package: TO-220-3 Full Pack

Stock20,496
IPB016N06L3 G
Infineon Technologies

MOSFET N-CH 60V 180A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock21,258
SSM3J36FS,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.33A SSM

Package: SC-75, SOT-416

Stock1,781,880
ND2012L
Siliconix

SMALL SIGNAL FIELD-EFFECT TRANSI

Package: -

Request a Quote
MCG10N15A-TP
Micro Commercial Co

MCG10N15A-TP

Package: -

Request a Quote
DMP2065U-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

Package: -

Stock5,541

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPS075N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock2,144	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	18nC @ 10V	1900pF @ 15V	-	-	47W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRF7807D1PBF	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,344	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	17nC @ 5V	-	±12V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI1300BDL-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 400MA SC-70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 190mW (Ta), 200mW (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock577,224	MOSFET (Metal Oxide)	20V	400mA (Tc)	2.5V, 4.5V	1V @ 250µA	0.84nC @ 4.5V	35pF @ 10V	±8V	-	190mW (Ta), 200mW (Tc)	850 mOhm @ 250mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
IRFR120TRR	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,504	MOSFET (Metal Oxide)	100V	7.7A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	270 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,936	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	22nC @ 10V	560pF @ 50V	±30V	-	70W (Tc)	700 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFS4115TRL	Infineon Technologies	MOSFET N-CH 150V 99A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,536	MOSFET (Metal Oxide)	150V	99A (Tc)	10V	5V @ 250µA	120nC @ 10V	5270pF @ 50V	±20V	-	375W (Tc)	12.1 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMT6009LFG-13	Diodes Incorporated	MOSFET N-CH 60V 11A POWERDI3333- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,808	MOSFET (Metal Oxide)	60V	11A (Ta), 34A (Tc)	4.5V, 10V	2V @ 250µA	33.5nC @ 10V	1925pF @ 30V	±16V	-	2.08W (Ta), 19.2W (Tc)	10 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
BUK7Y29-40EX	Nexperia USA Inc.	MOSFET N-CH 40V 26A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,376	MOSFET (Metal Oxide)	40V	26A (Tc)	10V	4V @ 1mA	7.9nC @ 10V	492pF @ 25V	±20V	-	37W (Tc)	29 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRFH5104TR2PBF	Infineon Technologies	MOSFET N-CH 40V 24A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	Package: 8-VQFN Exposed Pad	Stock7,668	MOSFET (Metal Oxide)	40V	24A (Ta), 100A (Tc)	10V	4V @ 100µA	80nC @ 10V	3120pF @ 25V	±20V	-	3.6W (Ta), 114W (Tc)	3.5 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-VQFN Exposed Pad
IRFP150MPBF	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock4,416	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	±20V	-	160W (Tc)	36 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
RCJ700N20TL	Rohm Semiconductor	MOSFET N-CH 200V 70A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock13,584	MOSFET (Metal Oxide)	200V	70A (Tc)	10V	5V @ 1mA	125nC @ 10V	6900pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	42.7 mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
FDMC2674	Fairchild/ON Semiconductor	MOSFET N-CH 220V 1A 3.3SQ MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 366 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock648,720	MOSFET (Metal Oxide)	220V	1A (Ta), 7A (Tc)	10V	4V @ 250µA	18nC @ 10V	1180pF @ 100V	±20V	-	2.1W (Ta), 42W (Tc)	366 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
DMG4435SSS-13	Diodes Incorporated	MOSFET P-CH 30V 7.3A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock540,492	MOSFET (Metal Oxide)	30V	7.3A (Ta)	5V, 20V	2.5V @ 250µA	35.4nC @ 10V	1614pF @ 15V	±25V	-	2.5W (Ta)	16 mOhm @ 11A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SIHS90N65E-E3	Vishay Siliconix	MOSFET N-CH 650V 87A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 591nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11826pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-247-3	Package: TO-247-3	Stock16,788	MOSFET (Metal Oxide)	650V	87A (Tc)	10V	4V @ 250µA	591nC @ 10V	11826pF @ 100V	±30V	-	625W (Tc)	29 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-247-3
SIHA21N60EF-E3	Vishay Siliconix	MOSFET N-CH 600V 21A TO-220 FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,496	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2030pF @ 100V	±30V	-	35W (Tc)	176 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
IPB016N06L3 G	Infineon Technologies	MOSFET N-CH 60V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock21,258	MOSFET (Metal Oxide)	60V	180A (Tc)	4.5V, 10V	2.2V @ 196µA	166nC @ 4.5V	28000pF @ 30V	±20V	-	250W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
SSM3J36FS,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 0.33A SSM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock1,781,880	MOSFET (Metal Oxide)	20V	330mA (Ta)	1.5V, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	±8V	-	150mW (Ta)	1.31 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	SSM	SC-75, SOT-416
ND2012L	Siliconix	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCG10N15A-TP	Micro Commercial Co	MCG10N15A-TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1182 pF @ 75 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20.8W Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3030-8 Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A	6V, 10V	4V @ 250µA	22 nC @ 10 V	1182 pF @ 75 V	±25V	-	20.8W	65mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3030-8	8-PowerWDFN
DMP2065U-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,541	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.8V, 4.5V	900mV @ 250µA	10.2 nC @ 4.5 V	808 pF @ 15 V	±12V	-	900mW	60mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP1008UCA9-7	Diodes Incorporated	MOSFET P-CH 8V 16A X2-DSN1515-9 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 952 pF @ 4 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DSN1515-9 Package / Case: 9-SMD, No Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	8 V	16A (Ta)	2.5V, 4.5V	1.1V @ 250µA	9.5 nC @ 4.5 V	952 pF @ 4 V	-6V	-	1.2W (Ta)	5.7mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DSN1515-9	9-SMD, No Lead
C3M0032120J1	Wolfspeed, Inc.	1200V 32MOHM SIC MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,575	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	15V	3.6V @ 11.5mA	111 nC @ 15 V	3424 pF @ 1000 V	+15V, -4V	-	277W (Tc)	43mOhm @ 41.4A, 15V	-40°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PMPB08R4VPHP	Nexperia USA Inc.	PMPB08R4VP/SOT1220-2/DFN2020M- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020M-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock30,000	MOSFET (Metal Oxide)	12 V	12A (Ta)	1.8V, 4.5V	0.9V @ 250µA	40 nC @ 4.5 V	2200 pF @ 6 V	±8V	-	1.9W (Ta), 12.5W (Tc)	9.6mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad
IMZA120R020M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 17.6mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	Package: -	Stock171	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	5.2V @ 17.6mA	83 nC @ 18 V	3460 nF @ 25 V	+20V, -5V	-	375W (Tc)	26.9mOhm @ 41A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-8	TO-247-4
SSM3J377R-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 3.9A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock8,499	MOSFET (Metal Oxide)	20 V	3.9A (Ta)	1.5V, 4.5V	1V @ 1mA	4.6 nC @ 4.5 V	290 pF @ 10 V	+6V, -8V	-	1W (Ta)	93mOhm @ 1.5A, 4.5V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IPP65R041CFD7XKSA1	Infineon Technologies	650V FET COOLMOS TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock1,470	MOSFET (Metal Oxide)	650 V	50A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	41mOhm @ 24.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
DMN2055UWQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.1A (Ta)	2.5V, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	400 pF @ 10 V	±8V	-	520mW (Ta)	46mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
MTD6N20ET4	onsemi	MOSFET N-CH 200V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 700mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	6A (Tc)	-	4V @ 250µA	21 nC @ 10 V	480 pF @ 25 V	-	-	-	700mOhm @ 3A, 10V	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63