Page 1313 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6655TR1
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SH

Package: DirectFET? Isometric SH

Stock3,840
IRF9388PBF
Infineon Technologies

MOSFET P-CH 30V 12A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,264
SPB80N06S2L-05
Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock146,388
IRF3707ZPBF
Infineon Technologies

MOSFET N-CH 30V 59A TO-220AB

Package: TO-220-3

Stock76,692
IRFI520N
Infineon Technologies

MOSFET N-CH 100V 7.6A TO220FP

Package: TO-220-3 Full Pack

Stock7,216
AON2701
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3A 6DFN

Package: 6-WDFN Exposed Pad

Stock119,988
FDB8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 48A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,312
NTD4806N-1G
ON Semiconductor

MOSFET N-CH 30V 11A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock77,664
ZXMN3A01FTC
Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock192,756
IRF644N
Vishay Siliconix

MOSFET N-CH 250V 14A TO-220AB

Package: TO-220-3

Stock5,632
STP19NB20
STMicroelectronics

MOSFET N-CH 200V 19A TO-220

Package: TO-220-3

Stock33,000
IXTP18N60PM
IXYS

MOSFET N-CH TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,688
TSM60N1R4CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,104
SIRC10DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A SO-8

Package: PowerPAK? SO-8

Stock3,920
SI4800BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock19,363,224
NTA4151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.76A SOT-416

Package: SC-75, SOT-416

Stock3,401,076
BSS308PEH6327XTSA1
Infineon Technologies

MOSFET P-CH 30V 2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock665,502
LND150K1-G
Microchip Technology

MOSFET N-CH 500V 0.013A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock44,910
NVMFWS9D6P04M8LT1G
onsemi

MV8 P-CH 40V SO-8FL PORTFOLIO EX

Package: -

Stock9,000
FQB34N20TM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6655TR1	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-SH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SH Package / Case: DirectFET? Isometric SH	Package: DirectFET? Isometric SH	Stock3,840	MOSFET (Metal Oxide)	100V	4.2A (Ta), 19A (Tc)	10V	4.8V @ 25µA	11.7nC @ 10V	530pF @ 25V	±20V	-	2.2W (Ta), 42W (Tc)	62 mOhm @ 5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SH	DirectFET? Isometric SH
IRF9388PBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,264	MOSFET (Metal Oxide)	30V	12A (Ta)	10V, 20V	2.4V @ 25µA	52nC @ 10V	1680pF @ 25V	±25V	-	2.5W (Ta)	8.5 mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPB80N06S2L-05	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock146,388	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	7530pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3707ZPBF	Infineon Technologies	MOSFET N-CH 30V 59A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock76,692	MOSFET (Metal Oxide)	30V	59A (Tc)	4.5V, 10V	2.25V @ 25µA	15nC @ 4.5V	1210pF @ 15V	±20V	-	57W (Tc)	9.5 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI520N	Infineon Technologies	MOSFET N-CH 100V 7.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,216	MOSFET (Metal Oxide)	100V	7.6A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	30W (Tc)	200 mOhm @ 4.3A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
AON2701	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 3A 6DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN-EP (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock119,988	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1V @ 250µA	6.5nC @ 4.5V	700pF @ 10V	±8V	Schottky Diode (Isolated)	1.5W (Ta)	120 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN-EP (2x2)	6-WDFN Exposed Pad
FDB8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 48A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47.3W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,312	MOSFET (Metal Oxide)	30V	48A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	1235pF @ 15V	±20V	-	47.3W (Tc)	14 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD4806N-1G	ON Semiconductor	MOSFET N-CH 30V 11A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock77,664	MOSFET (Metal Oxide)	30V	11.3A (Ta), 79A (Tc)	4.5V, 11.5V	2.5V @ 250µA	23nC @ 4.5V	2142pF @ 12V	±20V	-	1.4W (Ta), 68W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
ZXMN3A01FTC	Diodes Incorporated	MOSFET N-CH 30V 1.8A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock192,756	MOSFET (Metal Oxide)	30V	1.8A (Ta)	4.5V, 10V	1V @ 250µA	3.9nC @ 10V	190pF @ 25V	±20V	-	625mW (Ta)	120 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRF644N	Vishay Siliconix	MOSFET N-CH 250V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,632	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	54nC @ 10V	1060pF @ 25V	±20V	-	150W (Tc)	240 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP19NB20	STMicroelectronics	MOSFET N-CH 200V 19A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock33,000	MOSFET (Metal Oxide)	200V	19A (Tc)	10V	5V @ 250µA	40nC @ 10V	1000pF @ 25V	±30V	-	125W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP18N60PM	IXYS	MOSFET N-CH TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,688	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	5.5V @ 250µA	49nC @ 10V	2500pF @ 25V	±30V	-	90W (Tc)	420 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
TSM60N1R4CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,104	MOSFET (Metal Oxide)	600V	3.3A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	370pF @ 100V	±30V	-	38W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
SIRC10DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1873pF @ 15V Vgs (Max): +20V, -16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,920	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.4V @ 250µA	36nC @ 10V	1873pF @ 15V	+20V, -16V	Schottky Diode (Isolated)	43W (Tc)	3.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4800BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock19,363,224	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1.8V @ 250µA	13nC @ 5V	-	±25V	-	1.3W (Ta)	18.5 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTA4151PT1G	ON Semiconductor	MOSFET P-CH 20V 0.76A SOT-416 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 301mW (Tj) Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock3,401,076	MOSFET (Metal Oxide)	20V	760mA (Tj)	1.8V, 4.5V	450mV @ 250µA	2.1nC @ 4.5V	156pF @ 5V	±6V	-	301mW (Tj)	360 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
BSS308PEH6327XTSA1	Infineon Technologies	MOSFET P-CH 30V 2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock665,502	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	2V @ 11µA	5nC @ 10V	500pF @ 15V	±20V	-	500mW (Ta)	80 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
LND150K1-G	Microchip Technology	MOSFET N-CH 500V 0.013A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock44,910	MOSFET (Metal Oxide)	500V	13mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	360mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NVMFWS9D6P04M8LT1G	onsemi	MV8 P-CH 40V SO-8FL PORTFOLIO EX FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 580µA Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	17.1A (Ta), 77A (Tc)	4.5V, 10V	2.4V @ 580µA	14.47 nC @ 10 V	2002 pF @ 20 V	±20V	-	3.7W (Ta), 75W (Tc)	9.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
FQB34N20TM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	31A (Tc)	10V	5V @ 250µA	78 nC @ 10 V	3100 pF @ 25 V	±30V	-	3.13W (Ta), 180W (Tc)	75mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TP65H150LSG	Transphorm	GANFET N-CH 650V 15A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	15A (Tc)	10V	4.8V @ 500µA	7.1 nC @ 10 V	576 pF @ 400 V	±20V	-	69W (Tc)	180mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
R6020YNZ4C13	Rohm Semiconductor	NCH 600V 20A, TO-247, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.65mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock1,800	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V, 12V	6V @ 1.65mA	28 nC @ 10 V	1200 pF @ 100 V	±30V	-	182W (Tc)	185mOhm @ 6A, 12V	150°C (TJ)	Through Hole	TO-247	TO-247-3
SPB80N03S2L05	Infineon Technologies	80A, 30V, N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2V @ 110µA	89.7 nC @ 10 V	3320 pF @ 25 V	±20V	-	167W (Tc)	4.9mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMT67M8LCGQ-13	Diodes Incorporated	MOSFET N-CH 60V 16A/64.6A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16A (Ta), 64.6A (Tc)	4.5V, 10V	2.5V @ 250µA	37.5 nC @ 10 V	2130 pF @ 30 V	±20V	-	900mW (Tc)	5.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
CMS04N06Y-HF	Comchip Technology	MOSFET N-CH 60V 4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	2.5V @ 250µA	5.1 nC @ 4.5 V	509 pF @ 15 V	±20V	-	3.1W (Ta)	100mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BSC016N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 31A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock49,959	MOSFET (Metal Oxide)	60 V	31A (Ta), 100A (Tc)	6V, 10V	3.3V @ 95µA	95 nC @ 10 V	6500 pF @ 30 V	±20V	-	3W (Ta), 167W (Tc)	1.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IRFF9232	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 25W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	3.5A (Tc)	-	-	-	-	-	-	25W	-	-	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
NTTFS015N04CTAG	onsemi	MOSFET N-CH 40V 9.4A/27A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	9.4A (Ta), 27A (Tc)	10V	3.5V @ 20µA	6.3 nC @ 10 V	325 pF @ 25 V	±20V	-	2.9W (Ta), 23W (Tc)	17.3mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN