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Infineon Technologies |
MOSFET N-CH WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,256 |
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Infineon Technologies |
MOSFET NCH 600V 10.6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,480 |
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MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 3.5V @ 300µA | 32nC @ 10V | 700pF @ 100V | ±20V | Super Junction | 83W (Tc) | 380 mOhm @ 3.8A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 61A DIRECTFET L6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L6
- Package / Case: DirectFET? Isometric L6
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Package: DirectFET? Isometric L6 |
Stock4,128 |
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MOSFET (Metal Oxide) | 25V | 61A (Ta), 270A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 96nC @ 4.5V | 6500pF @ 13V | ±20V | - | 4.3W (Ta), 83W (Tc) | 0.7 mOhm @ 61A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET? Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 30V 91A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,536 |
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MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 3V @ 250µA | 27nC @ 5V | 2672pF @ 16V | ±20V | - | 115W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,016 |
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MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 20A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,880 |
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MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4V, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | ±20V | - | 1.75W (Ta), 74W (Tc) | 27 mOhm @ 10A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,888 |
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MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 229pF @ 25V | ±30V | - | 36W (Tc) | 7 Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 14A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,400 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 47nC @ 10V | 2010pF @ 25V | ±30V | - | 278W (Tc) | 470 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 33A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 5V @ 250µA | 46.8nC @ 10V | 2200pF @ 25V | ±30V | - | 245W (Tc) | 94 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 16A 8HSSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 2.56mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 24.6W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSSO
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock35,640 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 3V @ 2.56mA | 17nC @ 4.5V | 2940pF @ 10V | ±20V | - | 2W (Ta), 24.6W (Tc) | 4.1 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
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Texas Instruments |
MOSFET N-CH 100V 15A VSONP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (3x3.15)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,080 |
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MOSFET (Metal Oxide) | 100V | 15A (Ta) | 6V, 10V | 3.8V @ 250µA | 4.3nC @ 10V | 454pF @ 50V | ±20V | - | 2.8W (Ta), 23W (Tc) | 59 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock81,558 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 74nC @ 10V | 6900pF @ 15V | ±20V | - | 1.6W (Ta), 78W (Tc) | 0.9 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 60V 12A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1185pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock399,240 |
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MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | 1185pF @ 30V | ±20V | - | 2.5W (Ta), 50W (Tc) | 115 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-5
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,910 |
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MOSFET (Metal Oxide) | 60 V | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.3V @ 48µA | 53 nC @ 10 V | 4420 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 2.2mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-5 | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 800V 3.6A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 5.5V @ 100µA | 14.2 nC @ 10 V | 750 pF @ 25 V | ±30V | - | 100W (Tc) | 3.4Ohm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diotec Semiconductor |
IC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 7.5A (Tc) | 10V | 4V @ 250µA | 18.4 nC @ 10 V | 722 pF @ 325 V | ±30V | - | 62.5W (Tc) | 430mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
GAN N-CH 600V 10A LSON-8
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-LSON-8-1
- Package / Case: 8-LDFN Exposed Pad
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | 1.6V @ 960µA | - | 157 pF @ 400 V | -10V | - | 62.5W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |
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IXYS |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | ±20V | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET N-CH 60V 15A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,975 |
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MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 4V, 10V | 3V @ 1mA | 18 nC @ 10 V | 930 pF @ 10 V | ±20V | - | 20W (Tc) | 40mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 60V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 2V @ 35µA | 9.5 nC @ 10 V | 880 pF @ 25 V | 20V | - | 3.6W (Ta), 46W (Tc) | 9.2mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 20 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 13.6W (Tc)
- Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4.5A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerPAK®SC-70W-6
- Package / Case: 6-PowerVDFN
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Package: - |
Stock116,205 |
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MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 10 nC @ 4.5 V | 910 pF @ 10 V | ±12V | - | 13.6W (Tc) | 17.5mOhm @ 4.5A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 | 6-PowerVDFN |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=190W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock11,880 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 190W (Tc) | 110mOhm @ 12A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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onsemi |
MOSFET N-CH 80V 7A/25A 8DFN DL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 7A (Ta), 25A (Tc) | 4.5V, 10V | 2V @ 26µA | 10 nC @ 10 V | 521 pF @ 40 V | ±20V | - | 3.2W (Ta), 38W (Tc) | 25.5mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 8-PowerTDFN |
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Rohm Semiconductor |
NCH 600V 22A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,994 |
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MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V, 12V | 6V @ 1.8mA | 33 nC @ 10 V | 1400 pF @ 100 V | ±30V | - | 205W (Tc) | 165mOhm @ 6.5A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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EPC |
TRANS GAN 100V .0032OHM BMP DIE
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Stock25,368 |
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- | 100 V | 60A (Ta) | 5V | 2.5V @ 7mA | 17.8 nC @ 5 V | 2703 pF @ 50 V | +6V, -4V | - | - | 3.2mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Qorvo |
1200V/23MO,SICFET,G4,TO263-7
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V U-DFN2020-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.8 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 8.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 10.5A (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 25.8 nC @ 8 V | 2453 pF @ 10 V | ±8V | - | 660mW (Ta) | 11mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN |
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Renesas Electronics Corporation |
MP-3ZK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock16,512 |
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MOSFET (Metal Oxide) | 60 V | 36A (Tc) | 4V, 10V | 2.5V @ 1mA | 63 nC @ 10 V | 3300 pF @ 10 V | ±20V | - | 1W (Ta), 65W (Tc) | 31mOhm @ 18A, 10V | 150°C | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |