Page 1329 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOU2N60A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,704
IXTC240N055T
IXYS

MOSFET N-CH 55V 132A ISOPLUS220

Package: ISOPLUS220?

Stock4,000
NTD4302
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock526,968
IRLM110ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 1.5A SOT-223

Package: TO-261-4, TO-261AA

Stock5,664
FDU6030BL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,768
IRF9540
Vishay Siliconix

MOSFET P-CH 100V 19A TO-220AB

Package: TO-220-3

Stock6,224
STU10NM65N
STMicroelectronics

MOSFET N-CH 650V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,160
STF23NM60N
STMicroelectronics

MOSFET N-CH 600V 19A TO-220FP

Package: TO-220-3 Full Pack

Stock33,924
STF16NM50N
STMicroelectronics

MOSFET N-CH 500V 15A TO-220FP

Package: TO-220-3 Full Pack

Stock29,436
NDD60N360U1-1G
ON Semiconductor

MOSFET N-CH 600V 114A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,496
PMPB100XPEAX
Nexperia USA Inc.

PMPB100XPEA/SOT1220/SOT1220

Package: -

Stock3,504
DMN67D8L-13
Diodes Incorporated

MOSFET N-CH 60V 0.21A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,112
IXTA110N12T2
IXYS

120V/110A TRENCHT2 POWER MOSFET

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,912
STP8N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP.,

Package: TO-220-3

Stock7,040
IXTP1N100
IXYS

MOSFET N-CH 1000V 1.5A TO-220AB

Package: TO-220-3

Stock37,200
SI4812BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 7.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,114,556
SK8603190L
Panasonic Electronic Components

MOSFET N-CH 30V 12A 8HSO

Package: 8-PowerSMD, Flat Leads

Stock27,720
IRLML2244TRPBF
Infineon Technologies

MOSFET P-CH 20V 4.3A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock883,200
IRL520NSPBF
Infineon Technologies

MOSFET N-CH 100V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,252
SQA300CEJW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOU2N60A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,704	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 250µA	11nC @ 10V	295pF @ 25V	±30V	-	57W (Tc)	4.7 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251-3	TO-251-3 Short Leads, IPak, TO-251AA
IXTC240N055T	IXYS	MOSFET N-CH 55V 132A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock4,000	MOSFET (Metal Oxide)	55V	132A (Tc)	10V	4V @ 1mA	170nC @ 10V	7600pF @ 25V	±20V	-	150W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
NTD4302	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock526,968	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLM110ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 1.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 750mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,664	MOSFET (Metal Oxide)	100V	1.5A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	2.2W (Tc)	440 mOhm @ 750mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDU6030BL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,768	MOSFET (Metal Oxide)	30V	10A (Ta), 42A (Tc)	4.5V, 10V	3V @ 250µA	31nC @ 10V	1143pF @ 15V	±20V	-	3.8W (Ta), 50W (Tc)	16 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF9540	Vishay Siliconix	MOSFET P-CH 100V 19A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	100V	19A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	150W (Tc)	200 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,160	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock33,924	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	35W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock29,436	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	38nC @ 10V	1200pF @ 50V	±25V	-	30W (Tc)	260 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NDD60N360U1-1G	ON Semiconductor	MOSFET N-CH 600V 114A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,496	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	26nC @ 10V	790pF @ 50V	±25V	-	114W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PMPB100XPEAX	Nexperia USA Inc.	PMPB100XPEA/SOT1220/SOT1220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,504	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN67D8L-13	Diodes Incorporated	MOSFET N-CH 60V 0.21A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,112	MOSFET (Metal Oxide)	60V	210mA (Ta)	5V, 10V	2.5V @ 250µA	0.82nC @ 10V	22pF @ 25V	±30V	-	340mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXTA110N12T2	IXYS	120V/110A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,912	MOSFET (Metal Oxide)	120V	110A (Tc)	10V	4.5V @ 250µA	120nC @ 10V	6570pF @ 25V	±20V	-	517W (Tc)	14 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP8N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.60 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,040	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTP1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock37,200	MOSFET (Metal Oxide)	1000V	1.5A (Tc)	10V	4.5V @ 25µA	14.5nC @ 10V	400pF @ 25V	±30V	-	54W (Tc)	11 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI4812BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 7.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,114,556	MOSFET (Metal Oxide)	30V	7.3A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 5V	-	±20V	-	1.4W (Ta)	16 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SK8603190L	Panasonic Electronic Components	MOSFET N-CH 30V 12A 8HSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1.01mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSO Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock27,720	MOSFET (Metal Oxide)	30V	12A (Ta), 19A (Tc)	4.5V, 10V	3V @ 1.01mA	6.3nC @ 4.5V	1092pF @ 10V	±20V	-	2.7W (Ta), 19W (Tc)	10 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-HSO	8-PowerSMD, Flat Leads
IRLML2244TRPBF	Infineon Technologies	MOSFET P-CH 20V 4.3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 4.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock883,200	MOSFET (Metal Oxide)	20V	4.3A (Ta)	2.5V, 4.5V	1.1V @ 10µA	6.9nC @ 4.5V	570pF @ 16V	±12V	-	1.3W (Ta)	54 mOhm @ 4.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
IRL520NSPBF	Infineon Technologies	MOSFET N-CH 100V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,252	MOSFET (Metal Oxide)	100V	10A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	3.8W (Ta), 48W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQA300CEJW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 30 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK®SC-70W-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	5.63A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	365 pF @ 25 V	±20V	-	13.6W (Tc)	33mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK®SC-70W-6	PowerPAK® SC-70-6
DMTH10H4M6SPS-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock7,500	MOSFET (Metal Oxide)	100 V	20A (Ta), 100A (Tc)	10V	4V @ 250µA	66 nC @ 10 V	4327 pF @ 50 V	±20V	-	2.7W (Ta), 136W (Tc)	4.6mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
SSP45N20A	Fairchild Semiconductor	35A, 200V, 0.065OHM, N-CHANNEL M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	35A (Tc)	10V	4V @ 250µA	152 nC @ 10 V	3940 pF @ 25 V	±30V	-	175W (Tc)	65mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI6467BDQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 6.8A 8TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 850mV @ 450µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	6.8A (Ta)	-	850mV @ 450µA	70 nC @ 4.5 V	-	-	-	-	12.5mOhm @ 8A, 4.5V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
DMT10H072LFDFQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V U-DFN2020 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	4A (Ta)	4.5V, 10V	3V @ 250µA	4.5 nC @ 10 V	228 pF @ 50 V	±20V	-	800mW (Ta)	62mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
NVMFS5C430NLWFET1G	onsemi	T6-40V N 1.4 MOHMS LL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	38A (Ta), 200A (Tc)	4.5V, 10V	2V @ 250µA	70 nC @ 10 V	4300 pF @ 20 V	±20V	-	3.8W (Ta), 110W (Tc)	1.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MSD60P16	Bruckewell	P-Channel MOSFET,60V,-16A,TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	16A (Ta)	-	2.5V @ 250µA	-	-	±20V	-	-	48mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FCMT180N65S3	onsemi	MOSFET N-CH 650V 17A POWER88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.8mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power88 Package / Case: 4-PowerTSFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	650 V	17A (Tc)	10V	4.5V @ 1.8mA	33 nC @ 10 V	1350 pF @ 400 V	±30V	-	139W (Tc)	180mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power88	4-PowerTSFN
TSM5ND50CI	Taiwan Semiconductor Corporation	500V, 5A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Tc)	-	3.8V @ 250µA	16 nC @ 10 V	603 pF @ 50 V	±30V	-	42W (Tc)	1.5Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3