Page 1358 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3805L-7PPBF
Infineon Technologies

MOSFET N-CH 55V 160A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,816
IRL3103D1PBF
Infineon Technologies

MOSFET N-CH 30V 64A TO-220AB

Package: TO-220-3

Stock2,672
2SJ652-1EX
ON Semiconductor

MOSFET P-CH TO-220FP-3

Package: -

Stock6,736
FQPF3P20
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.2A TO-220F

Package: TO-220-3 Full Pack

Stock26,400
IPB044N15N5ATMA1
Infineon Technologies

MV POWER MOS

Package: -

Stock3,536
IRFR9N20DTRLPBF
Infineon Technologies

MOSFET N-CH 200V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,648
PSMN7R8-120PSQ
Nexperia USA Inc.

MOSFET N-CH 120V 70A TO-220AB

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,408
DMP4010SK3-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,336
DMP3035SFG-7
Diodes Incorporated

MOSFET P-CH 30V POWERDI3333-8

Package: 8-PowerWDFN

Stock3,184
AON7506
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 12A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock781,332
SIA456DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 2.6A SC70-6

Package: PowerPAK? SC-70-6

Stock1,315,068
STD12NF06T4
STMicroelectronics

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock735,636
PMZ290UNE2YL
Nexperia USA Inc.

MOSFET N-CH 20V 1.02A SOT323

Package: SC-101, SOT-883

Stock4,736
STB8N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP.,

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,872
STW6N90K5
STMicroelectronics

N-CHANNEL 900 V, 2.1 OHM TYP., 3

Package: TO-247-3

Stock12,492
SM2320NSAC-TRG-ML
MOSLEADER

N 20V 6.3A SOT-23

Package: -

Request a Quote
DMTH10H1M7STLWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

Package: -

Stock4,389
GSF7002AT
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE ,115MA, 60V

Package: -

Stock17,970
BUZ73AHXKSA1
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IQE057N10NM6ATMA1
Infineon Technologies

TRENCH >=100V

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3805L-7PPBF	Infineon Technologies	MOSFET N-CH 55V 160A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,816	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	4V @ 250µA	200nC @ 10V	7820pF @ 25V	±20V	-	300W (Tc)	2.6 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRL3103D1PBF	Infineon Technologies	MOSFET N-CH 30V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,672	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	2W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SJ652-1EX	ON Semiconductor	MOSFET P-CH TO-220FP-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,736	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
FQPF3P20	Fairchild/ON Semiconductor	MOSFET P-CH 200V 2.2A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock26,400	MOSFET (Metal Oxide)	200V	2.2A (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	32W (Tc)	2.7 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPB044N15N5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFR9N20DTRLPBF	Infineon Technologies	MOSFET N-CH 200V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,648	MOSFET (Metal Oxide)	200V	9.4A (Tc)	10V	5.5V @ 250µA	27nC @ 10V	560pF @ 25V	±30V	-	86W (Tc)	380 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN7R8-120PSQ	Nexperia USA Inc.	MOSFET N-CH 120V 70A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9473pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,408	MOSFET (Metal Oxide)	120V	70A (Tc)	10V	4V @ 1mA	167nC @ 10V	9473pF @ 60V	±20V	-	349W (Tc)	7.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
DMP4010SK3-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.3W Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,336	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	91nC @ 10V	4234pF @ 20V	±25V	-	3.3W	9.9 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP3035SFG-7	Diodes Incorporated	MOSFET P-CH 30V POWERDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,184	MOSFET (Metal Oxide)	30V	8.5A (Ta)	5V, 10V	2.5V @ 250µA	17nC @ 10V	1633pF @ 15V	±25V	-	950mW (Ta)	20 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
AON7506	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 12A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock781,332	MOSFET (Metal Oxide)	30V	12A (Ta), 12A (Tc)	4.5V, 10V	2.3V @ 250µA	12.2nC @ 10V	542pF @ 15V	±20V	-	3.1W (Ta), 20.5W (Tc)	9.8 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
SIA456DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 2.6A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 100V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 750mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock1,315,068	MOSFET (Metal Oxide)	200V	2.6A (Tc)	1.8V, 4.5V	1.4V @ 250µA	14.5nC @ 10V	350pF @ 100V	±16V	-	3.5W (Ta), 19W (Tc)	1.38 Ohm @ 750mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
STD12NF06T4	STMicroelectronics	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock735,636	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	12nC @ 10V	315pF @ 25V	±20V	-	30W (Tc)	100 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PMZ290UNE2YL	Nexperia USA Inc.	MOSFET N-CH 20V 1.02A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock4,736	MOSFET (Metal Oxide)	20V	1.2A (Ta)	1.5V, 4.5V	950mV @ 250µA	1.4nC @ 4.5V	46pF @ 10V	±8V	-	350mW (Ta), 5.43W (Tc)	320 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
STB8N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.60 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,872	MOSFET (Metal Oxide)	900V	8A	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	800 mOhm @ 1.17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW6N90K5	STMicroelectronics	N-CHANNEL 900 V, 2.1 OHM TYP., 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,492	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
SM2320NSAC-TRG-ML	MOSLEADER	N 20V 6.3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH10H1M7STLWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI1012-8 Package / Case: 8-PowerSFN	Package: -	Stock4,389	MOSFET (Metal Oxide)	100 V	250A (Tc)	10V	4V @ 250µA	147 nC @ 10 V	9871 pF @ 50 V	±20V	-	6W (Ta), 250W (Tc)	2mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI1012-8	8-PowerSFN
GSF7002AT	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE ,115MA, 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock17,970	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±20V	-	150mW (Ta)	7.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
BUZ73AHXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.5A (Tc)	10V	4V @ 1mA	-	530 pF @ 25 V	±20V	-	40W (Tc)	600mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IQE057N10NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS36316	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 28A/32A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	28A (Ta), 32A (Tc)	4.5V, 10V	1.9V @ 250µA	42 nC @ 10 V	2005 pF @ 15 V	±12V	-	5W (Ta), 26W (Tc)	4.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
FDS5672_F095	onsemi	MOSFET N-CH 60V 12A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A (Tc)	6V, 10V	4V @ 250µA	45 nC @ 10 V	2200 pF @ 25 V	±20V	-	2.5W (Ta)	10mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
2SK3479-Z-E1-AZ	Renesas Electronics Corporation	MOSFET N-CH 100V 83A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263, TO-220SMD Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	83A (Tc)	-	-	210 nC @ 10 V	11000 pF @ 10 V	-	-	1.5W (Ta), 125W (Tc)	11mOhm @ 42A, 10V	150°C (TJ)	Surface Mount	TO-263, TO-220SMD	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R280C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 13.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	3.5V @ 430µA	43 nC @ 10 V	950 pF @ 100 V	±20V	-	104W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN6R0-30YLD-2X	Nexperia USA Inc.	PSMN6R0-30YLD/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 66A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	66A (Ta)	4.5V, 10V	2.2V @ 1mA	13.7 nC @ 10 V	832 pF @ 15 V	±20V	-	47W (Ta)	6mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IPB50R140CPATMA1	Infineon Technologies	MOSFET N-CH 550V 23A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	550 V	23A (Tc)	10V	3.5V @ 930µA	64 nC @ 10 V	2540 pF @ 100 V	±20V	-	192W (Tc)	140mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FCPF360N65S3R0L	onsemi	MOSFET N-CH 650V 10A TO220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	4.5V @ 1mA	18 nC @ 10 V	730 pF @ 400 V	±30V	-	27W (Tc)	360mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
SIHP080N60E-GE3	Vishay Siliconix	E SERIES POWER MOSFET TO-220AB, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,589	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2557 pF @ 100 V	±30V	-	227W (Tc)	80mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3