Page 1357 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPF04N03LA
Infineon Technologies

MOSFET N-CH 25V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,568
IRF3711
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

Package: TO-220-3

Stock456,324
AON7416_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: 8-VDFN Exposed Pad

Stock2,480
FQD7N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,180
FQD17P06TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,384
IRLZ44STRL
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,704
IRF840LCL
Vishay Siliconix

MOSFET N-CH 500V 8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock103,188
SI7384DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock83,484
SIHP5N50D-GE3
Vishay Siliconix

MOSFET N-CH 500V 5.3A TO220AB

Package: TO-220-3

Stock3,936
MCH3479-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A MCPH3

Package: 3-SMD, Flat Leads

Stock72,000
STD4N80K5
STMicroelectronics

MOSFET N-CH 800V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,080
IRF9530NSTRLPBF
Infineon Technologies

MOSFET P-CH 100V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,840
IXTP08N100D2
IXYS

MOSFET N-CH 1000V 0.8A TO220AB

Package: TO-220-3

Stock7,440
STL23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A POWERFLAT

Package: 4-PowerFlat? HV

Stock9,552
PHK04P02T,518
Nexperia USA Inc.

MOSFET P-CH 16V 4.66A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock53,796
STF16N50M2
STMicroelectronics

MOSFET N-CH 500V 13A TO-220FP

Package: TO-220-3 Full Pack

Stock4,256
FCPF22N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 22A TO-220F

Package: TO-220-3 Full Pack

Stock15,012
SI3442BDV-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 3A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,102,288
CES2321-ML
MOSLEADER

Single P -20V -3.8A SOT-23

Package: -

Request a Quote
IPA083N10NM5SXKSA1
Infineon Technologies

MOSFET N-CH 100V 50A TO220

Package: -

Stock1,470

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPF04N03LA	Infineon Technologies	MOSFET N-CH 25V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,568	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 30µA	41nC @ 5V	5199pF @ 15V	±20V	-	115W (Tc)	3.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3711	Infineon Technologies	MOSFET N-CH 20V 110A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock456,324	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AON7416_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock2,480	MOSFET (Metal Oxide)	30V	14A (Ta), 40A (Tc)	4.5V, 10V	1.7V @ 250µA	32nC @ 10V	1900pF @ 15V	±12V	-	3.1W (Ta), 25W (Tc)	8.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-VDFN Exposed Pad
FQD7N20LTF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 5.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,180	MOSFET (Metal Oxide)	200V	5.5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	2.5W (Ta), 45W (Tc)	750 mOhm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD17P06TF	Fairchild/ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,384	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	27nC @ 10V	900pF @ 25V	±25V	-	2.5W (Ta), 44W (Tc)	135 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLZ44STRL	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,704	MOSFET (Metal Oxide)	60V	50A (Tc)	4V, 5V	2V @ 250µA	66nC @ 5V	3300pF @ 25V	±10V	-	3.7W (Ta), 150W (Tc)	28 mOhm @ 31A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF840LCL	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock103,188	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SI7384DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock83,484	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	8.5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIHP5N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 5.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,936	MOSFET (Metal Oxide)	500V	5.3A (Tc)	10V	5V @ 250µA	20nC @ 10V	325pF @ 100V	±30V	-	104W (Tc)	1.5 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MCH3479-TL-H	ON Semiconductor	MOSFET N-CH 20V 3.5A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock72,000	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	-	2.8nC @ 4.5V	260pF @ 10V	±12V	-	900mW (Ta)	64 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
STD4N80K5	STMicroelectronics	MOSFET N-CH 800V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,080	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	10.5nC @ 10V	175pF @ 100V	±30V	-	60W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9530NSTRLPBF	Infineon Technologies	MOSFET P-CH 100V 14A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,840	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	200 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP08N100D2	IXYS	MOSFET N-CH 1000V 0.8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21 Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,440	MOSFET (Metal Oxide)	1000V	800mA (Tc)	-	-	14.6nC @ 5V	325pF @ 25V	±20V	Depletion Mode	60W (Tc)	21 Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock9,552	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	70nC @ 10V	2050pF @ 50V	±25V	-	3W (Ta), 150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
PHK04P02T,518	Nexperia USA Inc.	MOSFET P-CH 16V 4.66A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 600mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 12.8V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock53,796	MOSFET (Metal Oxide)	16V	4.66A (Tc)	2.5V, 10V	600mV @ 1mA	7.2nC @ 4.5V	528pF @ 12.8V	±8V	-	5W (Tc)	120 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STF16N50M2	STMicroelectronics	MOSFET N-CH 500V 13A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,256	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	710pF @ 100V	±25V	-	25W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
FCPF22N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 22A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±45V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,012	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	45nC @ 10V	1950pF @ 100V	±45V	-	39W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI3442BDV-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 3A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 57 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,102,288	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	1.8V @ 250µA	5nC @ 4.5V	295pF @ 10V	±12V	-	860mW (Ta)	57 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
CES2321-ML	MOSLEADER	Single P -20V -3.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA083N10NM5SXKSA1	Infineon Technologies	MOSFET N-CH 100V 50A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock1,470	MOSFET (Metal Oxide)	100 V	50A (Tc)	6V, 10V	3.8V @ 49µA	40 nC @ 10 V	2700 pF @ 50 V	±20V	-	36W (Tc)	8.3mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
MCU18P10Y-TP	Micro Commercial Co	MOSFET P-CH 100V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock12,654	MOSFET (Metal Oxide)	100 V	18A (Tc)	-	2.5V @ 250µA	20 nC @ 10 V	1050 pF @ 80 V	±20V	-	70W	110mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SSW2N60BTM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2A (Tc)	10V	4V @ 250µA	17 nC @ 10 V	490 pF @ 25 V	±30V	-	3.13W (Ta), 54W (Tc)	5Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NDCTR4065A	onsemi	MOSFET N-CH 650V 40A SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFW610BTMFP001	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	3.3A (Tc)	10V	4V @ 250µA	9.3 nC @ 10 V	225 pF @ 25 V	±30V	-	3.13W (Ta), 38W (Tc)	1.5Ohm @ 1.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMPH33M8SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V PowerDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (Type Q) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	100A (Tc)	6V, 10V	3V @ 250µA	81 nC @ 10 V	3775 pF @ 15 V	±20V	-	1.7W (Ta)	3.8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8 (Type Q)	8-PowerTDFN
IXFH68N20	IXYS	MOSFET N-CH 68A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI3415CHE3-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock17,655	MOSFET (Metal Oxide)	20 V	3.9A (Ta)	1.8V, 4.5V	1.25V @ 250µA	13 nC @ 10 V	540 pF @ 10 V	±10V	-	1W	40mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
AO4435L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 10.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.5A (Ta)	5V, 20V	3V @ 250µA	24 nC @ 10 V	1400 pF @ 15 V	±25V	-	3.1W (Ta)	14mOhm @ 11A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)