Page 136 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLU8256PBF
Infineon Technologies

MOSFET N-CH 25V 81A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,296
IPP07N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A TO-220

Package: TO-220-3

Stock2,240
IRF7834TR
Infineon Technologies

MOSFET N-CH 30V 19A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock72,000
IRF3415L
Infineon Technologies

MOSFET N-CH 150V 43A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,512
2SK1518-E
Renesas Electronics America

MOSFET N-CH 500V 20A TO3P

Package: TO-3P-3, SC-65-3

Stock10,668
FQA13N50CF_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 15A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,128
BUK6240-75C,118
NXP

MOSFET N-CH 75V 22A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,896
PMZ350XN,315
Nexperia USA Inc.

MOSFET N-CH 30V 1.87A SOT883

Package: SC-101, SOT-883

Stock4,464
SISC29N20DX1SA1
Infineon Technologies

TRANSISTOR P-CH BARE DIE

Package: -

Stock6,192
BSZ0502NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 22A 8SON

Package: 8-PowerTDFN

Stock6,624
UPA2813T1L-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 27A 8HVSON

Package: 8-PowerVDFN

Stock2,416
BUK7611-55B,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,616
TSM1NB60CW RPG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-261-4, TO-261AA

Stock3,136
IXFH28N60P3
IXYS

MOSFET N-CH 600V 28A TO247

Package: TO-247-3

Stock4,704
RSJ450N04TL
Rohm Semiconductor

MOSFET N-CH 40V 45A LPTS

Package: SC-83

Stock42,600
NTMFS5C442NT1G
ON Semiconductor

T6 40V MOSFET

Package: 8-PowerTDFN, 5 Leads

Stock7,920
PHP45NQ10T,127
Nexperia USA Inc.

MOSFET N-CH 100V 47A TO220AB

Package: TO-220-3

Stock36,558
STFI13N65M2
STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock13,218
SQM120P10_10M1LGE3
Vishay Siliconix

MOSFET P-CH 100V 120A TO263

Package: -

Request a Quote
NVH050N65S3F
onsemi

SF3 FRFET AUTO 50MOHM TO-247

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU8256PBF	Infineon Technologies	MOSFET N-CH 25V 81A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,296	MOSFET (Metal Oxide)	25V	81A (Tc)	4.5V, 10V	2.35V @ 25µA	15nC @ 4.5V	1470pF @ 13V	±20V	-	63W (Tc)	5.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPP07N03LB G	Infineon Technologies	MOSFET N-CH 30V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,240	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 40µA	25nC @ 5V	2782pF @ 15V	±20V	-	94W (Tc)	6.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRF7834TR	Infineon Technologies	MOSFET N-CH 30V 19A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock72,000	MOSFET (Metal Oxide)	30V	19A (Ta)	4.5V, 10V	2.25V @ 250µA	44nC @ 4.5V	3710pF @ 15V	±20V	-	2.5W (Ta)	4.5 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF3415L	Infineon Technologies	MOSFET N-CH 150V 43A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,512	MOSFET (Metal Oxide)	150V	43A (Tc)	10V	4V @ 250µA	200nC @ 10V	2400pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	42 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK1518-E	Renesas Electronics America	MOSFET N-CH 500V 20A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock10,668	MOSFET (Metal Oxide)	500V	20A (Ta)	10V	-	-	3050pF @ 10V	±30V	-	120W (Tc)	270 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQA13N50CF_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 15A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 218W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,128	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	218W (Tc)	480 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
BUK6240-75C,118	NXP	MOSFET N-CH 75V 22A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,896	MOSFET (Metal Oxide)	75V	22A (Tc)	4.5V, 10V	2.8V @ 1mA	21.4nC @ 10V	1280pF @ 25V	±16V	-	60W (Tc)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PMZ350XN,315	Nexperia USA Inc.	MOSFET N-CH 30V 1.87A SOT883 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock4,464	MOSFET (Metal Oxide)	30V	1.87A (Tc)	2.5V, 4.5V	1.5V @ 250µA	0.65nC @ 4.5V	37pF @ 25V	±12V	-	2.5W (Tc)	420 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
SISC29N20DX1SA1	Infineon Technologies	TRANSISTOR P-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,192	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0502NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 22A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,624	MOSFET (Metal Oxide)	30V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	26nC @ 10V	1600pF @ 15V	±20V	-	2.1W (Ta), 43W (Tc)	2.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
UPA2813T1L-E1-AT	Renesas Electronics America	MOSFET P-CH 30V 27A 8HVSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,416	MOSFET (Metal Oxide)	30V	27A (Tc)	-	-	80nC @ 10V	3130pF @ 10V	-	-	1.5W (Ta), 52W (Tc)	6.2 mOhm @ 27A, 10V	-	Surface Mount	8-HVSON (3x3.3)	8-PowerVDFN
BUK7611-55B,118	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2604pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,616	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	37nC @ 10V	2604pF @ 25V	±20V	-	157W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM1NB60CW RPG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,136	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4.5V @ 250µA	6.1nC @ 10V	138pF @ 25V	±30V	-	39W (Tc)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IXFH28N60P3	IXYS	MOSFET N-CH 600V 28A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,704	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 2.5mA	50nC @ 10V	3560pF @ 25V	±30V	-	695W (Tc)	260 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
RSJ450N04TL	Rohm Semiconductor	MOSFET N-CH 40V 45A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock42,600	MOSFET (Metal Oxide)	40V	45A (Ta)	10V	3V @ 1mA	43nC @ 10V	2400pF @ 25V	±20V	-	50W (Tc)	13.5 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
NTMFS5C442NT1G	ON Semiconductor	T6 40V MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,920	MOSFET (Metal Oxide)	40V	29A (Ta), 140A (Tc)	10V	4V @ 250µA	6.6nC @ 10V	2100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PHP45NQ10T,127	Nexperia USA Inc.	MOSFET N-CH 100V 47A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock36,558	MOSFET (Metal Oxide)	100V	47A (Tc)	10V	4V @ 1mA	61nC @ 10V	2600pF @ 25V	±20V	-	150W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STFI13N65M2	STMicroelectronics	MOSFET N-CH 650V 10A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock13,218	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	25W (Tc)	430 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
SQM120P10_10M1LGE3	Vishay Siliconix	MOSFET P-CH 100V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	190 nC @ 10 V	9000 pF @ 25 V	±20V	-	375W (Tc)	10.1mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVH050N65S3F	onsemi	SF3 FRFET AUTO 50MOHM TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	58A (Tc)	10V	5V @ 1.7mA	123 nC @ 10 V	5404 pF @ 400 V	±30V	-	403W (Tc)	50mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSS84AHZGT116	Rohm Semiconductor	PCH -60V -0.23A, SOT-23, SMALL S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock27,999	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	2.5V @ 100µA	-	34 pF @ 30 V	±20V	-	200mW (Ta)	5.3Ohm @ 230mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
IRFP351	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	350 V	16A (Tc)	10V	4V @ 250µA	130 nC @ 10 V	2000 pF @ 25 V	±20V	-	180W (Tc)	300mOhm @ 8.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
2SK1847-TB-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTTFSS1D1N02P1E	onsemi	25V PT11E IN 3X3 SD PACKAGE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 934µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 9-WDFN (3.3x3.3) Package / Case: 9-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	39A (Ta), 264A (Tc)	4.5V, 10V	2V @ 934µA	60 nC @ 10 V	4360 pF @ 13 V	±16V	-	2W (Ta), 89W (Tc)	0.85mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	9-WDFN (3.3x3.3)	9-PowerWDFN
2SK1157-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CP775-CWDM3011P-WN	Central Semiconductor Corp	MOSFET P-CH 30V 11A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 8 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	3V @ 250µA	80 nC @ 10 V	3100 pF @ 8 V	±20V	-	-	20mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
MSC750SMA170B	Microchip Technology	SICFET N-CH 1700V 7A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock750	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	184 pF @ 1360 V	+23V, -10V	-	68W (Tc)	940mOhm @ 2.5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AUIRFC8407TR	Infineon Technologies	AUTOMOTIVE POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-