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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,632 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | ±20V | - | 300W (Tc) | 4.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 10A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock121,692 |
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MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | ±16V | - | 28W (Tc) | 140 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock508,560 |
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MOSFET (Metal Oxide) | 100V | 12A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | ±20V | - | 1.28W (Ta), 56.6W (Tc) | 165 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 8V 3.7A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 720mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 4V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock6,672 |
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MOSFET (Metal Oxide) | 8V | 3.7A (Ta) | 1.2V, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | ±6V | - | 700mW (Ta) | 36 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,216 |
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MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 1.2 Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 7A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,040 |
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MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 560pF @ 50V | ±30V | - | 70W (Tc) | 700 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET P-CH 50V 48A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,520 |
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MOSFET (Metal Oxide) | 50V | 48A (Tc) | 10V | 4.5V @ 250µA | 53nC @ 10V | 3660pF @ 25V | ±15V | - | 150W (Tc) | 30 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 651V 800V ITO-220A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1253pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock3,440 |
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MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 4V @ 250µA | 35.4nC @ 10V | 1253pF @ 25V | ±30V | - | 41W (Tc) | 2 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 109.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,664 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 109.2nC @ 10V | 8500pF @ 25V | ±20V | - | 293W (Tc) | 2.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,712 |
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MOSFET (Metal Oxide) | 60V | 45A (Ta) | - | 2V @ 250µA | 32nC @ 5V | 1700pF @ 25V | - | - | 2.4W (Ta), 125W (Tj) | 28 mOhm @ 22.5A, 5V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock60,000 |
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MOSFET (Metal Oxide) | 200V | 7.2A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | ±20V | - | 700mW (Ta), 39W (Tc) | 114 mOhm @ 3.6A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 50V 70MA SMD
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CP
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock180,000 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 3-CP | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock16,872 |
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MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 330W (Tc) | 15 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock124,824 |
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MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | ±20V | - | 104W (Tc) | 280 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1050V 2A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1050V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V
- Vgs (Max): 30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: TO-3P-3 Full Pack |
Stock15,360 |
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MOSFET (Metal Oxide) | 1050V | 2A (Tc) | 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | 30V | - | 30W (Tc) | 8 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,128 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 136nC @ 10V | 9710pF @ 20V | ±20V | - | 306W (Tc) | 1.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 22.7A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 11.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock69,972 |
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MOSFET (Metal Oxide) | 60V | 22.7A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 945pF @ 25V | ±25V | - | 2.5W (Ta), 44W (Tc) | 45 mOhm @ 11.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N CH 30V 7.3A 8-SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock360,000 |
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MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | ±25V | - | 1.4W (Ta) | 21 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 130A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock678,240 |
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MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 7350pF @ 75V | ±20V | - | 333W (Tc) | 7.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 1.7A SSOT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,697,124 |
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MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 310pF @ 10V | ±8V | - | 500mW (Ta) | 70 mOhm @ 1.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 37.5A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 5V, 10V | 2V @ 250µA | 130 nC @ 5 V | 4030 pF @ 25 V | ±16V | - | 150W (Tc) | 7.5mOhm @ 37.5A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Panjit International Inc. |
SOT-23, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 2.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.3 nC @ 10 V | 509 pF @ 15 V | ±20V | - | 1.25W (Ta) | 75mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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YAGEO XSEMI |
MOSFET N-CH 30V 62A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 31.25W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock2,994 |
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MOSFET (Metal Oxide) | 30 V | 62A (Tc) | 4.5V, 10V | 3V @ 250µA | 36 nC @ 4.5 V | 3200 pF @ 15 V | ±20V | - | 2W (Ta), 31.25W (Tc) | 5mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Renesas Electronics Corporation |
POWER FIELD-EFFECT TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 230 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFM
- Package / Case: TO-3PFM, SC-93-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 230 V | 35A (Ta) | 10V | 4V @ 1mA | 105 nC @ 10 V | - | ±30V | - | 60W (Tc) | 700mOhm @ 6A, 10V | 150°C | Through Hole | TO-3PFM | TO-3PFM, SC-93-3 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 83W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 50A (Ta) | 4.5V, 10V | 2V @ 250mA | 51 nC @ 4.5 V | 2418 pF @ 15 V | ±12V | - | 83W (Ta) | 7.5mOhm @ 25A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
TRANSISTOR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,955 |
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SiCFET (Silicon Carbide) | 650 V | 24A (Tc) | 18V | 5.7V @ 2.6mA | 15 nC @ 18 V | 496 pF @ 400 V | +23V, -5V | - | 110W (Tc) | 141mOhm @ 8.9A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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