Page 1363 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB041N04NGATMA1
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,544
AOI206_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A TO251A

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,384
SI7403BDN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 8A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock72,012
IXTA70N085T
IXYS

MOSFET N-CH 85V 70A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
PHB145NQ06T,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,832
IPB024N10N5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock6,000
IPB22N03S4L15ATMA1
Infineon Technologies

MOSFET N-CH 30V 22A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,808
APT94N65B2C3G
Microsemi Corporation

MOSFET N-CH 650V 94A TO-247

Package: TO-247-3 Variant

Stock6,896
IRLR110
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,272
NVMFS6B75NLT1G
ON Semiconductor

MOSFET N-CH 100V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,360
RJK0353DPA-01#J0B
Renesas Electronics America

MOSFET N-CH 30V 35A 2WPACK

Package: 8-PowerWDFN

Stock4,768
RS1E300GNTB
Rohm Semiconductor

MOSFET N-CH 30V 30A 8-HSOP

Package: 8-PowerTDFN

Stock5,664
IXFL210N30P3
IXYS

MOSFET N-CH 300V 108A TO-264

Package: TO-264-3, TO-264AA

Stock6,544
IXFP60N25X3M
IXYS

MOSFET N-CH 250V 60A TO220AB

Package: TO-220-3

Stock5,408
STU5N60M2
STMicroelectronics

MOSFET N-CH 600V 3.7A TO220

Package: TO-220-3

Stock17,868
TK15S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,864
DMN6140L-13
Diodes Incorporated

MOSFET N-CH 60V 1.6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock581,382
NTTFS6H860NTAG
onsemi

TRENCH 8 80V NFET

Package: -

Stock4,500
GSFH03152
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 150.00A, 3

Package: -

Stock2,250
CPH3417-TL-E
onsemi

NCH 1.8V DRIVE SERIES

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB041N04NGATMA1	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,544	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 45µA	56nC @ 10V	4500pF @ 20V	±20V	-	94W (Tc)	4.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOI206_002	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 18A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,384	MOSFET (Metal Oxide)	30V	18A (Ta), 46A (Tc)	4.5V, 10V	2.4V @ 250µA	33nC @ 10V	1333pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Short Leads, IPak, TO-251AA
SI7403BDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 8A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock72,012	MOSFET (Metal Oxide)	20V	8A (Tc)	2.5V, 4.5V	1V @ 250µA	15nC @ 8V	430pF @ 10V	±8V	-	3.1W (Ta), 9.6W (Tc)	74 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IXTA70N085T	IXYS	MOSFET N-CH 85V 70A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	85V	70A (Tc)	10V	4V @ 50µA	59nC @ 10V	2570pF @ 25V	±20V	-	176W (Tc)	13.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB145NQ06T,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,832	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	64.7nC @ 10V	3825pF @ 25V	±20V	-	250W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB024N10N5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB22N03S4L15ATMA1	Infineon Technologies	MOSFET N-CH 30V 22A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,808	MOSFET (Metal Oxide)	30V	22A (Tc)	4.5V, 10V	2.2V @ 10µA	14nC @ 10V	980pF @ 25V	±16V	-	31W (Tc)	14.6 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT94N65B2C3G	Microsemi Corporation	MOSFET N-CH 650V 94A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 833W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,896	MOSFET (Metal Oxide)	650V	94A (Tc)	10V	3.9V @ 5.8mA	580nC @ 10V	13940pF @ 25V	±20V	-	833W (Tc)	35 mOhm @ 47A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
IRLR110	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,272	MOSFET (Metal Oxide)	100V	4.3A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS6B75NLT1G	ON Semiconductor	MOSFET N-CH 100V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,360	MOSFET (Metal Oxide)	100V	7A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	740pF @ 25V	±16V	-	3.5W (Ta), 56W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
RJK0353DPA-01#J0B	Renesas Electronics America	MOSFET N-CH 30V 35A 2WPACK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,768	MOSFET (Metal Oxide)	30V	35A (Ta)	4.5V, 10V	2.5V @ 1mA	14nC @ 4.5V	2180pF @ 10V	±20V	-	40W (Tc)	5.2 mOhm @ 17.5A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
RS1E300GNTB	Rohm Semiconductor	MOSFET N-CH 30V 30A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,664	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	39.8nC @ 10V	2500pF @ 15V	±20V	-	3W (Ta), 33W (Tc)	2.2 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
IXFL210N30P3	IXYS	MOSFET N-CH 300V 108A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,544	MOSFET (Metal Oxide)	300V	108A (Tc)	10V	5V @ 8mA	268nC @ 10V	16200pF @ 25V	±20V	-	520W (Tc)	16 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	TO-264-3, TO-264AA
IXFP60N25X3M	IXYS	MOSFET N-CH 250V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock5,408	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	36W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
STU5N60M2	STMicroelectronics	MOSFET N-CH 600V 3.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock17,868	MOSFET (Metal Oxide)	600V	3.7A (Tc)	10V	4V @ 250µA	4.5nC @ 10V	165pF @ 100V	±25V	-	45W (Tc)	1.4 Ohm @ 1.85A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK15S04N1L,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 7.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,864	MOSFET (Metal Oxide)	40V	15A (Ta)	4.5V, 10V	2.5V @ 100µA	10nC @ 10V	610pF @ 10V	±20V	-	46W (Tc)	17.8 mOhm @ 7.5A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN6140L-13	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock581,382	MOSFET (Metal Oxide)	60V	1.6A (Ta)	4.5V, 10V	3V @ 250µA	8.6nC @ 10V	315pF @ 40V	±20V	-	700mW (Ta)	140 mOhm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NTTFS6H860NTAG	onsemi	TRENCH 8 80V NFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,500	MOSFET (Metal Oxide)	80 V	8A (Ta), 30A (Tc)	6V, 10V	4V @ 30µA	8.7 nC @ 10 V	510 pF @ 40 V	±20V	-	3.1W (Ta), 46W (Tc)	21.1mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
GSFH03152	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 150.00A, 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,250	MOSFET (Metal Oxide)	30 V	150A (Ta)	4.5V, 10V	2.5V @ 250µA	70.6 nC @ 10 V	3400 pF @ 25 V	±20V	-	110W (Ta)	3.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
CPH3417-TL-E	onsemi	NCH 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHG17N80AEF-GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock888	MOSFET (Metal Oxide)	800 V	15A (Tc)	10V	4V @ 250µA	63 nC @ 10 V	1300 pF @ 100 V	±30V	-	179W (Tc)	305mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
APT6010B2FLLG	Microchip Technology	MOSFET N-CH 600V 54A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	54A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	6710 pF @ 25 V	-	-	-	100mOhm @ 27A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
IPD50P04P413ATMA2	Infineon Technologies	MOSFET P-CH 40V 50A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock21,735	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	4V @ 85µA	51 nC @ 10 V	3670 pF @ 25 V	±20V	-	58W (Tc)	12.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPT017N12NM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	29A (Ta), 331A (Tc)	8V, 10V	3.6V @ 275µA	141 nC @ 10 V	11000 pF @ 60 V	±20V	-	3W (Ta), 395W (Tc)	1.7mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IST006N04NM6AUMA1	Infineon Technologies	MOSFET N-CH 40V 58A/475A HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Package: -	Stock4,029	MOSFET (Metal Oxide)	40 V	58A (Ta), 475A (Tc)	6V, 10V	3.3V @ 250µA	178 nC @ 10 V	8800 pF @ 20 V	±20V	-	3.8W (Ta), 250W (Tc)	0.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
IPP091N06N-G	Infineon Technologies	MOSFET N-CHAN TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	-	4V @ 130µA	81 nC @ 10 V	2800 pF @ 30 V	-	-	-	9.1mOhm @ 80A, 10V	-	Through Hole	PG-TO220-3	TO-220-3
NVMFS5C677NLT1G	onsemi	MOSFET N-CH 60V 11A/36A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock8,700	MOSFET (Metal Oxide)	60 V	11A (Ta), 36A (Tc)	4.5V, 10V	2V @ 25µA	9.7 nC @ 10 V	620 pF @ 25 V	±20V	-	3.5W (Ta), 37W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AO4410	UMW	SOP-8 MOSFETS ROHS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock8,868	MOSFET (Metal Oxide)	30 V	18A (Ta)	4.5V, 10V	1.5V @ 250µA	85 nC @ 10 V	10500 pF @ 15 V	±12V	-	3.1W (Ta)	5.5mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)