Page 1365 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOD516_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,368
2SK3431-Z-E1-AZ
Renesas Electronics America

MOSFET N-CH 40V 83A TO220AB

Package: TO-220-3

Stock2,064
2N7002WST1G
ON Semiconductor

MOSFET N-CH 60V 0.115A SC70

Package: SC-70, SOT-323

Stock4,208
PMF77XN,115
NXP

MOSFET N-CH 30V 1.5A SOT323

Package: SC-70, SOT-323

Stock7,440
JANTXV2N6798
Microsemi Corporation

MOSFET N-CH

Package: TO-205AF Metal Can

Stock9,432
BUK958R5-40E,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,264
AOT474
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 9A TO220

Package: TO-220-3

Stock374,352
BUK9635-100A,118
NXP

MOSFET N-CH 100V 41A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,064
HUFA76423S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 35A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,272
IRLZ14S
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,520
SPD07N60C3ATMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock5,728
IRF520SPBF
Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,100
DMN63D8L-13
Diodes Incorporated

MOSFET N-CH 30V 0.35A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,392
TSM60N600CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,936
STF12N50M2
STMicroelectronics

MOSFET N-CH 500V 10A TO220FP

Package: TO-220-3 Full Pack

Stock21,000
STP60NF06L
STMicroelectronics

MOSFET N-CH 60V 60A TO-220

Package: TO-220-3

Stock593,148
IRFH5006TRPBF
Infineon Technologies

MOSFET N-CH 60V 100A 8-PQFN

Package: 8-PowerVDFN

Stock60,348
FDH50N50_F133
Fairchild/ON Semiconductor

MOSFET N-CH 500V 48A TO-247

Package: TO-247-3

Stock12,588
STQ1NK80ZR-AP
STMicroelectronics

MOSFET N-CH 800V 0.3A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,648
IRFC260NB
Infineon Technologies

MOSFET 200V 50A DIE

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOD516_002	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 18A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,368	MOSFET (Metal Oxide)	30V	18A (Ta), 46A (Tc)	4.5V, 10V	2.2V @ 250µA	33nC @ 10V	1229pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3431-Z-E1-AZ	Renesas Electronics America	MOSFET N-CH 40V 83A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 42A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,064	MOSFET (Metal Oxide)	40V	83A (Tc)	4V, 10V	-	110nC @ 10V	6100pF @ 10V	±20V	-	1.5W (Ta), 100W (Tc)	5.6 mOhm @ 42A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7002WST1G	ON Semiconductor	MOSFET N-CH 60V 0.115A SC70 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock4,208	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
PMF77XN,115	NXP	MOSFET N-CH 30V 1.5A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 270mW (Ta), 1.92W (Tc) Rds On (Max) @ Id, Vgs: 97 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock7,440	MOSFET (Metal Oxide)	30V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	2.9nC @ 4.5V	170pF @ 15V	±12V	-	270mW (Ta), 1.92W (Tc)	97 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
JANTXV2N6798	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock9,432	MOSFET (Metal Oxide)	200V	5.5A (Tc)	10V	4V @ 250µA	42.07nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	420 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
BUK958R5-40E,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,264	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2.1V @ 1mA	20.9nC @ 5V	2600pF @ 25V	±10V	-	96W (Tc)	6.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOT474	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 75V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 127A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 417W (Tc) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock374,352	MOSFET (Metal Oxide)	75V	9A (Ta), 127A (Tc)	10V	4V @ 250µA	60nC @ 10V	3370pF @ 30V	±20V	-	1.9W (Ta), 417W (Tc)	11.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
BUK9635-100A,118	NXP	MOSFET N-CH 100V 41A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3573pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,064	MOSFET (Metal Oxide)	100V	41A (Tc)	4.5V, 10V	2V @ 1mA	-	3573pF @ 25V	±10V	-	149W (Tc)	34 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76423S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 35A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,272	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1060pF @ 25V	±16V	-	85W (Tc)	30 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ14S	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,520	MOSFET (Metal Oxide)	60V	10A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD07N60C3ATMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF520SPBF	Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,100	MOSFET (Metal Oxide)	100V	9.2A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	270 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN63D8L-13	Diodes Incorporated	MOSFET N-CH 30V 0.35A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23.2pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,392	MOSFET (Metal Oxide)	30V	350mA (Ta)	2.5V, 10V	1.5V @ 250µA	0.9nC @ 10V	23.2pF @ 25V	±20V	-	350mW (Ta)	2.8 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TSM60N600CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,936	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 250µA	13nC @ 10V	743pF @ 100V	±30V	-	83W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
STF12N50M2	STMicroelectronics	MOSFET N-CH 500V 10A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,000	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	15nC @ 10V	560pF @ 100V	±25V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP60NF06L	STMicroelectronics	MOSFET N-CH 60V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock593,148	MOSFET (Metal Oxide)	60V	60A (Tc)	10V, 5V	1V @ 250µA	66nC @ 4.5V	2000pF @ 25V	±15V	-	110W (Tc)	14 mOhm @ 30A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFH5006TRPBF	Infineon Technologies	MOSFET N-CH 60V 100A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock60,348	MOSFET (Metal Oxide)	60V	21A (Ta), 100A (Tc)	10V	4V @ 150µA	100nC @ 10V	4175pF @ 30V	±20V	-	3.6W (Ta), 156W (Tc)	4.1 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
FDH50N50_F133	Fairchild/ON Semiconductor	MOSFET N-CH 500V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,588	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	5V @ 250µA	137nC @ 10V	6460pF @ 25V	±20V	-	625W (Tc)	105 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STQ1NK80ZR-AP	STMicroelectronics	MOSFET N-CH 800V 0.3A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,648	MOSFET (Metal Oxide)	800V	300mA (Tc)	10V	4.5V @ 50µA	7.7nC @ 10V	160pF @ 25V	±30V	-	3W (Tc)	16 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
IRFC260NB	Infineon Technologies	MOSFET 200V 50A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 40mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	50A	10V	-	-	-	-	-	-	40mOhm @ 50A, 10V	-	Surface Mount	Die	Die
MSC180SMA120SA	Microchip Technology	MOSFET SIC 1200 V 180 MOHM TO-26 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.26V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab)	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	3.26V @ 500µA	34 nC @ 20 V	510 pF @ 1000 V	+23V, -10V	-	125W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, DPak (7 Leads + Tab)
H5N2513PL-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI6415DQ-T1-BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Stock18,000	MOSFET (Metal Oxide)	30 V	6.5A (Ta)	4.5V, 10V	1V @ 250µA	70 nC @ 10 V	-	±20V	-	1.5W (Ta)	19mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
64-2115PBF	Infineon Technologies	MOSFET N-CH 75V 75A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH180N20X3	IXYS	MOSFET N-CH 200V 180A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Stock1,659	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	4.5V @ 4mA	154 nC @ 10 V	10300 pF @ 25 V	±20V	-	780W (Tc)	7.5mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
PSMN015-100YSFX	Nexperia USA Inc.	NEXTPOWER 80/100V MOSFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock4,500	MOSFET (Metal Oxide)	100 V	55A (Ta)	7V, 10V	4V @ 1mA	36 nC @ 10 V	2234 pF @ 50 V	±20V	-	105W (Ta)	15mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FDMC7570S-PC01	onsemi	MOSFET N-CH 25V 27A/40A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4410 pF @ 13 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	27A (Ta), 40A (Tc)	4.5V, 10V	3V @ 1mA	68 nC @ 10 V	4410 pF @ 13 V	±20V	-	2.3W (Ta), 59W (Tc)	2mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3)	8-PowerTDFN
MMFTN3402	Diotec Semiconductor	MOSFET N-CH 30V 1.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,280	MOSFET (Metal Oxide)	30 V	1.9A (Ta)	4.5V, 10V	1.4V @ 250µA	-	-	±20V	-	500mW (Ta)	55mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3