Page 1434 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUZ31 E3046
Infineon Technologies

MOSFET N-CH 200V 14.5A TO262-3

Package: TO-220-3

Stock4,320
AOT10N60_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock3,776
DMN4015LK3-13
Diodes Incorporated

MOSFET N-CH 40V 13.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock420,612
FCA16N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 16A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,984
APTM50SKM38TG
Microsemi Corporation

MOSFET N-CH 500V 90A SP4

Package: SP4

Stock5,360
APTM120SK68T1G
Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

Package: SP1

Stock6,928
IRFR310TR
Vishay Siliconix

MOSFET N-CH 400V 1.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock977,064
AUIRF7669L2TR
Infineon Technologies

MOSFET N-CH 100V 375A DIRECTFET

Package: DirectFET? Isometric L8

Stock3,248
IXTV96N25T
IXYS

MOSFET N-CH 250V 96A PLUS220

Package: TO-220-3, Short Tab

Stock4,048
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 2.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock2,224
SQ4410EY-T1_GE3
Vishay Siliconix

MOSFET N-CH 30V 15A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,480
DN2535N3-G-P003
Microchip Technology

MOSFET N-CH 350V 0.12A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,664
BUK9840-55/CUX
Nexperia USA Inc.

MOSFET N-CH 55V 5A SOT223

Package: TO-261-4, TO-261AA

Stock7,888
NDTL03N150CG
ON Semiconductor

MOSFET N-CH 1500V 2.5A TO3P3

Package: TO-3PL

Stock5,136
PSMN015-60BS,118
Nexperia USA Inc.

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,976
IPD60R950C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 4.4A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,560
SQJ457EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 36A SO8

Package: PowerPAK? SO-8

Stock3,056
FDMA6676PZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 11A

Package: 6-PowerWDFN

Stock3,424
CSD17576Q5B
Texas Instruments

MOSFET N-CH 30V 100A 8VSON

Package: 8-PowerTDFN

Stock23,682
NTMFS4C08NT1G
ON Semiconductor

MOSFET N-CH 30V 52A SO8FL

Package: 8-PowerTDFN

Stock636,960

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUZ31 E3046	Infineon Technologies	MOSFET N-CH 200V 14.5A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,320	MOSFET (Metal Oxide)	200V	14.5A (Tc)	5V	4V @ 1mA	-	1120pF @ 25V	±20V	-	95W (Tc)	200 mOhm @ 9A, 5V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
AOT10N60_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,776	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	250W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMN4015LK3-13	Diodes Incorporated	MOSFET N-CH 40V 13.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2072pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.19W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock420,612	MOSFET (Metal Oxide)	40V	13.5A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 10V	2072pF @ 20V	±20V	-	2.19W (Ta)	15 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FCA16N60_F109	Fairchild/ON Semiconductor	MOSFET N-CH 600V 16A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,984	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 250µA	70nC @ 10V	2250pF @ 25V	±30V	-	167W (Tc)	260 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
APTM50SKM38TG	Microsemi Corporation	MOSFET N-CH 500V 90A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock5,360	MOSFET (Metal Oxide)	500V	90A	10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	±30V	-	694W (Tc)	45 mOhm @ 45A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM120SK68T1G	Microsemi Corporation	MOSFET N-CH 1200V 15A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,928	MOSFET (Metal Oxide)	1200V	15A	10V	5V @ 2.5mA	260nC @ 10V	6696pF @ 25V	±30V	-	357W (Tc)	816 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IRFR310TR	Vishay Siliconix	MOSFET N-CH 400V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock977,064	MOSFET (Metal Oxide)	400V	1.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	170pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	3.6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRF7669L2TR	Infineon Technologies	MOSFET N-CH 100V 375A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 68A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock3,248	MOSFET (Metal Oxide)	100V	19A (Ta), 114A (Tc)	10V	5V @ 250µA	120nC @ 10V	5660pF @ 25V	±20V	-	3.3W (Ta), 100W (Tc)	4.4 mOhm @ 68A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IXTV96N25T	IXYS	MOSFET N-CH 250V 96A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock4,048	MOSFET (Metal Oxide)	250V	96A (Tc)	10V	5V @ 1mA	114nC @ 10V	6100pF @ 25V	±30V	-	625W (Tc)	29 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
TK3A65DA(STA4,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 2.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 2.51 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,224	MOSFET (Metal Oxide)	650V	2.5A (Ta)	10V	4.4V @ 1mA	11nC @ 10V	490pF @ 25V	±30V	-	35W (Tc)	2.51 Ohm @ 1.3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
SQ4410EY-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,480	MOSFET (Metal Oxide)	30V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	53nC @ 10V	2385pF @ 25V	±20V	-	5W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DN2535N3-G-P003	Microchip Technology	MOSFET N-CH 350V 0.12A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,664	MOSFET (Metal Oxide)	350V	120mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
BUK9840-55/CUX	Nexperia USA Inc.	MOSFET N-CH 55V 5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,888	MOSFET (Metal Oxide)	55V	5A (Ta), 10.7A (Tc)	5V	2V @ 1mA	-	1400pF @ 25V	±10V	-	8.3W (Tc)	40 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NDTL03N150CG	ON Semiconductor	MOSFET N-CH 1500V 2.5A TO3P3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 1.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(L) Package / Case: TO-3PL	Package: TO-3PL	Stock5,136	MOSFET (Metal Oxide)	1500V	2.5A (Ta)	10V	-	34nC @ 10V	650pF @ 30V	±30V	-	2.5W (Ta), 140W (Tc)	10.5 Ohm @ 1.25A, 10V	150°C (TJ)	Through Hole	TO-3P(L)	TO-3PL
PSMN015-60BS,118	Nexperia USA Inc.	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 14.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,976	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 1mA	20.9nC @ 10V	1220pF @ 30V	±20V	-	86W (Tc)	14.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R950C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 4.4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,560	MOSFET (Metal Oxide)	600V	4.4A (Tc)	10V	3.5V @ 130µA	13nC @ 10V	280pF @ 100V	±20V	-	37W (Tc)	950 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ457EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 36A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,056	MOSFET (Metal Oxide)	60V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	3400pF @ 25V	±20V	-	68W (Tc)	25 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDMA6676PZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 11A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock3,424	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.6V @ 250µA	46nC @ 10V	2160pF @ 15V	±25V	-	2.4W (Ta)	13.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-PowerWDFN
CSD17576Q5B	Texas Instruments	MOSFET N-CH 30V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock23,682	MOSFET (Metal Oxide)	30V	100A (Ta)	4.5V, 10V	1.8V @ 250µA	68nC @ 10V	4430pF @ 15V	±20V	-	3.1W (Ta), 125W (Tc)	2 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
NTMFS4C08NT1G	ON Semiconductor	MOSFET N-CH 30V 52A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock636,960	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	760mW (Ta), 25.5W (Tc)	5.8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SIR788DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2873pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock23,166	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	75nC @ 10V	2873pF @ 15V	±20V	Schottky Diode (Body)	5W (Ta), 48W (Tc)	3.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STD26NF10	STMicroelectronics	MOSFET N-CH 100V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock806,724	MOSFET (Metal Oxide)	100V	25A (Tc)	10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	±20V	-	100W (Tc)	38 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS138LT3G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock12,204	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTR4501NT1G-ML	MOSLEADER	N-Channel 20V 3.2A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2310UT-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	38 pF @ 10 V	±8V	-	290mW (Ta)	240mOhm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
UPA507TE-T1-AT	Renesas Electronics Corporation	P-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RQA0009TXDQS-H1	Renesas Electronics Corporation	MOSFET N-CH 16V 3.2A UPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	16 V	3.2A (Ta)	-	800mV @ 1mA	-	76 pF @ 0 V	±5V	-	15W (Tc)	-	150°C	Surface Mount	UPAK	TO-243AA
RRS090P03HZGTB	Rohm Semiconductor	AUTOMOTIVE PCH -30V -9A POWER MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,183	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	2.5V @ 1mA	30 nC @ 5 V	3000 pF @ 10 V	±20V	-	2W (Ta)	15.4mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)