Page 1437 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7701
Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock4,160
JANTX2N6790
Microsemi Corporation

MOSFET N-CH TO-205AF TO-39

Package: TO-205AF Metal Can

Stock6,156
TK50E10K3(S1SS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 50A TO-220AB

Package: -

Stock4,400
FQI32N12V2TU
Fairchild/ON Semiconductor

MOSFET N-CH 120V 32A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,192
IRF630L
Vishay Siliconix

MOSFET N-CH 200V 9A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,320
IRFIBE20G
Vishay Siliconix

MOSFET N-CH 800V 1.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock288,000
IPZ65R095C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO247-4

Package: TO-247-4

Stock2,560
IXFK150N15P
IXYS

MOSFET N-CH 150V 150A TO-264

Package: TO-264-3, TO-264AA

Stock2,512
IXFQ26N50
IXYS

MOSFET N-CH 500V 26A TO-30

Package: TO-3P-3, SC-65-3

Stock4,704
TK31J60W5,S1VQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO-3P(N)

Package: TO-3P-3, SC-65-3

Stock7,888
ZXM66P03N8TA
Diodes Incorporated

MOSFET P-CH 30V 7.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock472,332
PSMN006-20K,518
Nexperia USA Inc.

MOSFET N-CH 20V 32A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,920
NVTFS5C680NLWFTAG
ON Semiconductor

MOSFET N-CH 60V U8FL

Package: 8-PowerWDFN

Stock4,368
APT18M100B
Microsemi Corporation

MOSFET N-CH 1000V 18A TO-247

Package: TO-247-3

Stock3,296
IRFZ48NSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,172
FDPF20N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-220F

Package: TO-220-3 Full Pack

Stock12,540
TPN2010FNH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 5.6A 8TSON

Package: 8-PowerVDFN

Stock4,816
STF5N80K5
STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP.,

Package: TO-220-3 Full Pack

Stock17,556
IPB65R045C7ATMA1
Infineon Technologies

MOSFET N-CH 650V 46A TO-263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,766
STF26NM60N
STMicroelectronics

MOSFET N-CH 600V 20A TO-220F

Package: TO-220-3 Full Pack

Stock62,916

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7701	Infineon Technologies	MOSFET P-CH 12V 10A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,160	MOSFET (Metal Oxide)	12V	10A (Tc)	1.8V, 4.5V	1.2V @ 250µA	100nC @ 4.5V	5050pF @ 10V	±8V	-	1.5W (Ta)	11 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
JANTX2N6790	Microsemi Corporation	MOSFET N-CH TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock6,156	MOSFET (Metal Oxide)	200V	3.5A (Tc)	10V	4V @ 250µA	14.3nC @ 10V	-	±20V	-	800mW (Tc)	850 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
TK50E10K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 50A TO-220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: -	Package: -	Stock4,400	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	-
FQI32N12V2TU	Fairchild/ON Semiconductor	MOSFET N-CH 120V 32A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,192	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	4V @ 250µA	53nC @ 10V	1860pF @ 25V	±30V	-	3.75W (Ta), 150W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF630L	Vishay Siliconix	MOSFET N-CH 200V 9A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,320	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	±20V	-	-	400 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFIBE20G	Vishay Siliconix	MOSFET N-CH 800V 1.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock288,000	MOSFET (Metal Oxide)	800V	1.4A (Tc)	10V	4V @ 250µA	38nC @ 10V	530pF @ 25V	±20V	-	30W (Tc)	6.5 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPZ65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: TO-247-4	Stock2,560	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	128W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IXFK150N15P	IXYS	MOSFET N-CH 150V 150A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,512	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	5V @ 4mA	190nC @ 10V	5800pF @ 25V	±20V	-	714W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFQ26N50	IXYS	MOSFET N-CH 500V 26A TO-30 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,704	MOSFET (Metal Oxide)	500V	26A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
TK31J60W5,S1VQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-3P(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,888	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	3.7V @ 1.5mA	105nC @ 10V	3000pF @ 300V	±30V	Super Junction	230W (Tc)	88 mOhm @ 15.4A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
ZXM66P03N8TA	Diodes Incorporated	MOSFET P-CH 30V 7.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1979pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock472,332	MOSFET (Metal Oxide)	30V	6.25A (Ta)	4.5V, 10V	1V @ 250µA	36nC @ 5V	1979pF @ 25V	±20V	-	1.56W (Ta)	25 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN006-20K,518	Nexperia USA Inc.	MOSFET N-CH 20V 32A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,920	MOSFET (Metal Oxide)	20V	32A (Tc)	1.8V, 4.5V	700mV @ 1mA	32nC @ 2.5V	4350pF @ 20V	±10V	-	8.3W (Tc)	5 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVTFS5C680NLWFTAG	ON Semiconductor	MOSFET N-CH 60V U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 327pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,368	MOSFET (Metal Oxide)	60V	7.82A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 250µA	6nC @ 10V	327pF @ 25V	±20V	-	3W (Ta), 20W (Tc)	26.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
APT18M100B	Microsemi Corporation	MOSFET N-CH 1000V 18A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4845pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock3,296	MOSFET (Metal Oxide)	1000V	18A (Tc)	10V	5V @ 1mA	150nC @ 10V	4845pF @ 25V	±30V	-	625W (Tc)	700 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
IRFZ48NSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,172	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	±20V	-	3.8W (Ta), 130W (Tc)	14 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF20N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,540	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	59.5nC @ 10V	3120pF @ 25V	±30V	-	38.5W (Tc)	230 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
TPN2010FNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 5.6A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,816	MOSFET (Metal Oxide)	250V	5.6A (Ta)	10V	4V @ 200µA	7nC @ 10V	600pF @ 100V	±20V	-	700mW (Ta), 39W (Tc)	198 mOhm @ 2.8A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
STF5N80K5	STMicroelectronics	N-CHANNEL 800 V, 1.50 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,556	MOSFET (Metal Oxide)	800V	4A (Ta)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	20W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPB65R045C7ATMA1	Infineon Technologies	MOSFET N-CH 650V 46A TO-263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,766	MOSFET (Metal Oxide)	650V	46A (Tc)	10V	4V @ 1.25mA	93nC @ 10V	4340pF @ 400V	±20V	-	227W (Tc)	45 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock62,916	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1800pF @ 50V	±30V	-	35W (Tc)	165 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRF7854TRPBF	Infineon Technologies	MOSFET N-CH 80V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,348	MOSFET (Metal Oxide)	80V	10A (Ta)	10V	4.9V @ 100µA	41nC @ 10V	1620pF @ 25V	±20V	-	2.5W (Ta)	13.4 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AON6278	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 80V 34A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4646pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 208W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock36,000	MOSFET (Metal Oxide)	80V	34A (Ta), 85A (Tc)	6V, 10V	3.3V @ 250µA	86nC @ 10V	4646pF @ 40V	±20V	-	7.4W (Ta), 208W (Tc)	3.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
S2M0080120J	SMC Diode Solutions	MOSFET SILICON CARBIDE SIC 1200V FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 37A (Tj) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 234W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock900	SiC (Silicon Carbide Junction Transistor)	1200 V	37A (Tj)	20V	4V @ 10mA	54 nC @ 20 V	1324 pF @ 1000 V	+20V, -5V	-	234W (Tc)	100mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVBLS0D7N04M8TXG	onsemi	MOSFET N-CH 40V 240A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	240A (Tc)	10V	4V @ 250µA	188 nC @ 10 V	12000 pF @ 25 V	±20V	-	357W (Tj)	0.75mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
IRFH5207TR2PBF	Infineon Technologies	MOSFET N-CH 75V 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	13A (Ta), 71A (Tc)	-	4V @ 100µA	59 nC @ 10 V	2474 pF @ 25 V	-	-	-	9.6mOhm @ 43A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
CEDM7001-BK-PBFREE	Central Semiconductor Corp	MOSFET N-CH 20V 100MA SOT883 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.5V, 4V	900mV @ 250µA	0.57 nC @ 4.5 V	9 pF @ 3 V	10V	-	100mW (Ta)	3Ohm @ 10mA, 4V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883
SQ4005EY-T1_GE3	Vishay Siliconix	MOSFET P-CHANNEL 12V 15A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock24,462	MOSFET (Metal Oxide)	12 V	15A (Tc)	2.5V, 4.5V	1V @ 250µA	38 nC @ 4.5 V	3600 pF @ 6 V	±8V	-	6W (Tc)	22mOhm@ 13.5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
2N7002KW-TP	Micro Commercial Co	MOSFET N-CH 60V 340MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock210,489	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5V @ 1mA	-	40 pF @ 10 V	±20V	-	200mW	5Ohm @ 500mA, 10V	-55°C ~ 150°C	Surface Mount	SOT-323	SC-70, SOT-323