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Infineon Technologies |
MOSFET N-CH 25V 17A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SQ
- Package / Case: DirectFET? Isometric SQ
|
Package: DirectFET? Isometric SQ |
Stock2,000 |
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MOSFET (Metal Oxide) | 25V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 2.4V @ 50µA | 18nC @ 4.5V | 1570pF @ 13V | ±20V | - | 2.2W (Ta), 36W (Tc) | 4.9 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,296 |
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MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 61A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock12,660 |
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MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 700mV @ 250µA | 58nC @ 4.5V | 2500pF @ 15V | ±10V | - | 89W (Tc) | 13 mOhm @ 37A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 20A TO3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2097pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 347W (Tc)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock4,992 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 76nC @ 10V | 2097pF @ 25V | ±30V | - | 347W (Tc) | 330 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 30V 6A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
- Vgs (Max): -
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,328 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | - | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | - | Schottky Diode (Isolated) | - | 32 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 900V 3.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,240 |
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MOSFET (Metal Oxide) | 900V | 3.5A (Ta) | 10V | - | 33nC @ 10V | 650pF @ 30V | ±30V | - | 2W (Ta), 35W (Tc) | 3.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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NXP |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4824pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 254W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,632 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 69nC @ 10V | 4824pF @ 25V | ±20V | - | 254W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 11.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock3,072 |
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MOSFET (Metal Oxide) | 30V | 11.5A (Ta), 85A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2614pF @ 12V | ±16V | - | 880mW (Ta), 48.4W (Tc) | 4.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microsemi Corporation |
MOSFET N-CH 1200V 103A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 103A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 30900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2272W (Tc)
- Rds On (Max) @ Id, Vgs: 114 mOhm @ 51.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock2,672 |
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MOSFET (Metal Oxide) | 1200V | 103A | 10V | 5V @ 15mA | 1122nC @ 10V | 30900pF @ 25V | ±30V | - | 2272W (Tc) | 114 mOhm @ 51.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Infineon Technologies |
MOSFET N-CH 80V BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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Package: Die |
Stock6,240 |
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MOSFET (Metal Oxide) | 80V | 1A (Tj) | 10V | 3.5V @ 270µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,840 |
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MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | ±20V | - | 18W (Tc) | 3.3 Ohm @ 590mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 65µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,544 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 65µA | 23nC @ 10V | 1600pF @ 25V | ±20V | - | 3.6W (Ta), 68W (Tc) | 3.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,528 |
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MOSFET (Metal Oxide) | 24V | 80A (Tc) | 2.5V, 10V | 1.45V @ 250µA | 53.7nC @ 10V | 1683pF @ 15V | ±12V | - | 3W (Ta) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2405pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock221,940 |
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MOSFET (Metal Oxide) | 25V | 24A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 47nC @ 10V | 2405pF @ 13V | ±20V | - | 3.7W (Ta), 65W (Tc) | 4 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 60A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6V, 10V | 3.7V @ 50µA | 66nC @ 10V | 2230pF @ 25V | ±20V | - | 83W (Tc) | 9 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2683pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 148W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock21,372 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 42.3nC @ 10V | 2683pF @ 20V | ±20V | - | 148W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock235,080 |
|
MOSFET (Metal Oxide) | 200V | 15.2A (Tc) | 10V | 4V @ 30µA | 11.6nC @ 10V | 920pF @ 100V | ±20V | - | 62.5W (Tc) | 90 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
|
|
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
|
Package: - |
Stock11,175 |
|
MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 2.5V, 10V | 2.5V @ 250µA | 1.1 nC @ 4.5 V | 51 pF @ 25 V | ±20V | - | 300mW (Ta) | 4Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 45V 58A/100A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 45 V | 58A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 155 nC @ 10 V | 10000 pF @ 22.5 V | ±20V | - | 7.3W (Ta), 208W (Tc) | 1.15mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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IXYS |
MOSFET N-CH 150V 240A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 4.5V @ 4mA | 150 nC @ 10 V | 9580 pF @ 25 V | ±20V | - | 780W (Tc) | 5.4mOhm @ 120A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V PowerDI33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 100 V | 26A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | 683 pF @ 50 V | ±20V | - | 1.7W (Ta) | 30mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Infineon Technologies |
TRENCH PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 81µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-U05
- Package / Case: TO-220-3
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Package: - |
Stock2,982 |
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MOSFET (Metal Oxide) | 40 V | 29A (Ta), 121A (Tc) | 6V, 10V | 3.4V @ 81µA | 102 nC @ 10 V | 4800 pF @ 20 V | ±20V | - | 3.8W (Ta), 150W (Tc) | 2.6mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
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Taiwan Semiconductor Corporation |
700V, 3A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 317 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | 3A (Tc) | 10V | 4V @ 250µA | 7.4 nC @ 10 V | 317 pF @ 100 V | ±30V | - | 28W (Tc) | 1.4Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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MOSLEADER |
Single N 20V 4.6A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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onsemi |
MOSFET N-CH 40V 50A/330A 8LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 190µA | 143 nC @ 10 V | 8862 pF @ 25 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.82mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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onsemi |
T6 60V SL LFPAK4 5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 28.7A (Ta), 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 134.4W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 28.7A (Ta), 171A (Tc) | 10V | 4V @ 180µA | 46 nC @ 10 V | 3584 pF @ 25 V | ±20V | - | 3.8W (Ta), 134.4W (Tc) | 2.3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Sanyo |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Wolfspeed, Inc. |
SIC, MOSFET, 45M, 650V, TO-247-4
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 46A (Tc) | 15V | 3.6V @ 4.84mA | 64 nC @ 15 V | 1593 pF @ 400 V | +19V, -8V | - | 150W (Tc) | 60mOhm @ 17.6A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |