Page 145 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR2703PBF
Infineon Technologies

MOSFET N-CH 30V 23A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,312
IRFU3911PBF
Infineon Technologies

MOSFET N-CH 100V 14A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,264
AO4466_102
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,184
SI4324DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock450,192
IXTJ36N20
IXYS

MOSFET N-CH 200V 36A TO-247AD

Package: TO-3P-3 Full Pack

Stock4,096
PMR780SN,115
NXP

MOSFET N-CH 60V 0.55A SOT416

Package: SC-75, SOT-416

Stock142,200
FQD5N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,064
STF21NM60N
STMicroelectronics

MOSFET N-CH 600V 17A TO-220FP

Package: TO-220-3 Full Pack

Stock167,868
IPD50R399CPBTMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock3,824
IPD50R800CEAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock2,656
IPA60R099P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220FP-3

Package: TO-220-3 Full Pack

Stock7,568
AOTF11C60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A

Package: TO-220-3 Full Pack

Stock2,640
DMTH4004SK3Q-13
Diodes Incorporated

MOSFET NCH 40V 100A TO252

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock2,496
STP20NM50
STMicroelectronics

MOSFET N-CH 500V 20A TO-220

Package: TO-220-3

Stock65,040
STD18N55M5
STMicroelectronics

MOSFET N-CH 550V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock813,864
ATP208-TL-H
ON Semiconductor

MOSFET N-CH 40V 90A ATPAK

Package: ATPAK (2 leads+tab)

Stock7,136
TP86R203NL,LQ
Toshiba Semiconductor and Storage

MOSFET N CH 30V 19A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,864
AUIRF4905
Infineon Technologies

MOSFET P-CH 55V 74A TO220AB

Package: TO-220-3

Stock6,552
IRFU110PBF
Vishay Siliconix

MOSFET N-CH 100V 4.3A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock19,200
PSMN012-60YS,115
Nexperia USA Inc.

MOSFET N-CH 60V 59A LFPAK

Package: SC-100, SOT-669

Stock110,646

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR2703PBF	Infineon Technologies	MOSFET N-CH 30V 23A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,312	MOSFET (Metal Oxide)	30V	23A (Tc)	4V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	45 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU3911PBF	Infineon Technologies	MOSFET N-CH 100V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,264	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	32nC @ 10V	740pF @ 25V	±20V	-	56W (Tc)	115 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
AO4466_102	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,184	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.6V @ 250µA	8.6nC @ 10V	448pF @ 15V	±20V	-	3.1W (Ta)	23 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4324DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock450,192	MOSFET (Metal Oxide)	30V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	85nC @ 10V	3510pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTJ36N20	IXYS	MOSFET N-CH 200V 36A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock4,096	MOSFET (Metal Oxide)	200V	36A (Tc)	10V	4V @ 4mA	140nC @ 10V	2970pF @ 25V	±20V	-	300W (Tc)	70 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-3P-3 Full Pack
PMR780SN,115	NXP	MOSFET N-CH 60V 0.55A SOT416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 530mW (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock142,200	MOSFET (Metal Oxide)	60V	550mA (Ta)	4.5V, 10V	3V @ 250µA	1.05nC @ 10V	23pF @ 30V	±20V	-	530mW (Tc)	920 mOhm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
FQD5N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,064	MOSFET (Metal Oxide)	200V	3.8A (Tc)	10V	5V @ 250µA	7.5nC @ 10V	270pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF21NM60N	STMicroelectronics	MOSFET N-CH 600V 17A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock167,868	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	4V @ 250µA	66nC @ 10V	1900pF @ 50V	±25V	-	30W (Tc)	220 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPD50R399CPBTMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD50R800CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R099P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,568	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	4.5V @ 1.21mA	70nC @ 10V	3330pF @ 100V	±20V	-	34W (Tc)	99 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
AOTF11C60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,640	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	50nC @ 10V	2333pF @ 100V	±30V	-	37W (Tc)	400 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
DMTH4004SK3Q-13	Diodes Incorporated	MOSFET NCH 40V 100A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock2,496	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	68.6nC @ 10V	4305pF @ 25V	±20V	-	3.9W (Ta), 180W (Tc)	3.2 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-4L	TO-252-5, DPak (4 Leads + Tab), TO-252AD
STP20NM50	STMicroelectronics	MOSFET N-CH 500V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock65,040	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	56nC @ 10V	1480pF @ 25V	±30V	-	192W (Tc)	250 mOhm @ 10A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD18N55M5	STMicroelectronics	MOSFET N-CH 550V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 192 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock813,864	MOSFET (Metal Oxide)	550V	16A (Tc)	10V	5V @ 250µA	31nC @ 10V	1260pF @ 100V	±25V	-	110W (Tc)	192 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
ATP208-TL-H	ON Semiconductor	MOSFET N-CH 40V 90A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 45A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock7,136	MOSFET (Metal Oxide)	40V	90A (Ta)	4.5V, 10V	-	83nC @ 10V	4510pF @ 20V	±20V	-	60W (Tc)	6 mOhm @ 45A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
TP86R203NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 19A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,864	MOSFET (Metal Oxide)	30V	19A (Ta)	4.5V, 10V	2.3V @ 200µA	17nC @ 10V	1400pF @ 15V	±20V	-	1W (Tc)	6.2 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
AUIRF4905	Infineon Technologies	MOSFET P-CH 55V 74A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,552	MOSFET (Metal Oxide)	55V	74A (Tc)	10V	4V @ 250µA	180nC @ 10V	3400pF @ 25V	±20V	-	200W (Tc)	20 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFU110PBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock19,200	MOSFET (Metal Oxide)	100V	4.3A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	25W (Tc)	540 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
PSMN012-60YS,115	Nexperia USA Inc.	MOSFET N-CH 60V 59A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock110,646	MOSFET (Metal Oxide)	60V	59A (Tc)	10V	4V @ 1mA	28.4nC @ 10V	1685pF @ 30V	±20V	-	89W (Tc)	11.1 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
MTP16N25E	onsemi	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 16A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	16A	10V	4V @ 250µA	70 nC @ 10 V	2180 pF @ 25 V	±20V	-	125W (Tc)	250mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOTS32334C	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 8A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8A (Ta)	4.5V, 10V	2.3V @ 250µA	20 nC @ 10 V	600 pF @ 15 V	±20V	-	2.5W (Ta)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
RJK4532DPD-E0-J2	Renesas Electronics Corporation	MOSFET N-CH 450V 4A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	4A (Ta)	10V	4.5V @ 1mA	9 nC @ 10 V	280 pF @ 25 V	±30V	-	40.3W (Tc)	2.3Ohm @ 2A, 10V	150°C	Surface Mount	MP-3A	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPD18P06PGBTMA1	Infineon Technologies	MOSFET P-CH 60V 18.6A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock24,882	MOSFET (Metal Oxide)	60 V	18.6A (Tc)	10V	4V @ 1mA	33 nC @ 10 V	860 pF @ 25 V	±20V	-	80W (Tc)	130mOhm @ 13.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTH4L040N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET ELI FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock828	SiCFET (Silicon Carbide)	1200 V	54A (Tc)	18V	4.4V @ 10mA	75 nC @ 18 V	1700 pF @ 800 V	+22V, -10V	-	231W (Tc)	54mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IRFR014TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock324	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	4V @ 250µA	11 nC @ 10 V	300 pF @ 25 V	±20V	-	2.5W (Ta), 25W (Tc)	200mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
EPC2044	EPC	TRANSISTOR GAN 40V .0105OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock21,759	GaNFET (Gallium Nitride)	100 V	9.4A (Ta)	5V	2.5V @ 3mA	5.5 nC @ 5 V	664 pF @ 50 V	+6V, -4V	-	-	10.5mOhm @ 10A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IXTM12N100	IXYS	MOSFET N-CH 1000V 12A TO204AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (IXTM) Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	12A (Tc)	10V	4.5V @ 250µA	170 nC @ 10 V	4000 pF @ 25 V	±20V	-	300W (Tc)	1.05Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (IXTM)	TO-204AA, TO-3