Page 1478 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7492TRPBF
Infineon Technologies

MOSFET N-CH 200V 3.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock41,676
IRF7210TRPBF
Infineon Technologies

MOSFET P-CH 12V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock79,116
IPP230N06L3 G
Infineon Technologies

MOSFET N-CH 60V 30A TO220-3

Package: TO-220-3

Stock7,712
FDZ203N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 7.5A BGA

Package: 9-WFBGA

Stock31,200
IPA60R060P7XKSA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Stock7,504
NTP5862NG
ON Semiconductor

MOSFET N-CH 60V TO-220-3

Package: TO-220-3

Stock7,584
BUK9Y15-100E,115
Nexperia USA Inc.

MOSFET N-CH 100V 69A LFPAK

Package: SC-100, SOT-669

Stock2,240
SIHU3N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 3A TO251 IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,752
NDD04N50Z-1G
ON Semiconductor

MOSFET N-CH 500V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,016
NTMFS4C10NT1G
ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

Package: 8-PowerTDFN

Stock94,020
STW52NK25Z
STMicroelectronics

MOSFET N-CH 250V 52A TO-247

Package: TO-247-3

Stock12,636
STS7N3LLH6
STMicroelectronics

MOSFET N-CH 30V 17A 8SOIC

Package: -

Stock4,304
BSC022N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

Package: 8-PowerTDFN

Stock2,688
STFI28N60M2
STMicroelectronics

MOSFET N-CH 600V 22A I2PAK-FP

Package: TO-262-3 Full Pack, I2Pak

Stock11,652
FDD8876
Fairchild/ON Semiconductor

MOSFET N-CH 30V 73A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock151,308
FDMS86520
Fairchild/ON Semiconductor

MOSFET N-CH 60V 14A 8-PQFN

Package: 8-PowerTDFN

Stock86,256
SIA448DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A SC70-6L

Package: PowerPAK? SC-70-6

Stock165,492
NVHL060N065SC1
onsemi

SIC MOS TO247-3L 650V

Package: -

Request a Quote
DMT68M8LFV-7
Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

Package: -

Stock4,389
PSMQC098N10LS2_R2_00201
Panjit International Inc.

100V/ 9.8M/ EXCELLECT LOW FOM MO

Package: -

Stock17,940

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7492TRPBF	Infineon Technologies	MOSFET N-CH 200V 3.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock41,676	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	2.5V @ 250µA	59nC @ 10V	1820pF @ 25V	±20V	-	2.5W (Ta)	79 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7210TRPBF	Infineon Technologies	MOSFET P-CH 12V 16A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 500µA Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock79,116	MOSFET (Metal Oxide)	12V	16A (Ta)	2.5V, 4.5V	600mV @ 500µA	212nC @ 5V	17179pF @ 10V	±12V	-	2.5W (Ta)	7 mOhm @ 16A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPP230N06L3 G	Infineon Technologies	MOSFET N-CH 60V 30A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,712	MOSFET (Metal Oxide)	60V	30A (Tc)	4.5V, 10V	2.2V @ 11µA	10nC @ 4.5V	1600pF @ 30V	±20V	-	36W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDZ203N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 7.5A BGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1127pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 9-BGA (2x2.1) Package / Case: 9-WFBGA	Package: 9-WFBGA	Stock31,200	MOSFET (Metal Oxide)	20V	7.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	15nC @ 4.5V	1127pF @ 10V	±12V	-	1.6W (Ta)	18 mOhm @ 7.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	9-BGA (2x2.1)	9-WFBGA
IPA60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,504	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTP5862NG	ON Semiconductor	MOSFET N-CH 60V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,584	MOSFET (Metal Oxide)	60V	98A (Tc)	-	4V @ 250µA	82nC @ 10V	6000pF @ 25V	-	-	-	5.7 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9Y15-100E,115	Nexperia USA Inc.	MOSFET N-CH 100V 69A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6139pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,240	MOSFET (Metal Oxide)	100V	69A (Tc)	5V, 10V	2.1V @ 1mA	45.8nC @ 5V	6139pF @ 25V	±10V	-	195W (Tc)	14.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SIHU3N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 3A TO251 IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,752	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	5V @ 250µA	12nC @ 10V	175pF @ 100V	±30V	-	69W (Tc)	3.2 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
NDD04N50Z-1G	ON Semiconductor	MOSFET N-CH 500V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,016	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	308pF @ 25V	±30V	-	61W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTMFS4C10NT1G	ON Semiconductor	MOSFET N-CH 30V 8.2A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock94,020	MOSFET (Metal Oxide)	30V	8.2A (Ta)	4.5V, 10V	2.2V @ 250µA	9.7nC @ 4.5V	987pF @ 15V	±20V	-	750mW (Ta), 23.6W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STW52NK25Z	STMicroelectronics	MOSFET N-CH 250V 52A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,636	MOSFET (Metal Oxide)	250V	52A (Tc)	10V	4.5V @ 150µA	160nC @ 10V	4850pF @ 25V	±30V	-	300W (Tc)	45 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STS7N3LLH6	STMicroelectronics	MOSFET N-CH 30V 17A 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,304	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC022N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,688	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 250µA	37nC @ 10V	2600pF @ 20V	±20V	-	2.5W (Ta), 69W (Tc)	2.2 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
STFI28N60M2	STMicroelectronics	MOSFET N-CH 600V 22A I2PAK-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock11,652	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	36nC @ 10V	1440pF @ 100V	±25V	-	30W (Tc)	150 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
FDD8876	Fairchild/ON Semiconductor	MOSFET N-CH 30V 73A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock151,308	MOSFET (Metal Oxide)	30V	15A (Ta), 73A (Tc)	4.5V, 10V	2.5V @ 250µA	47nC @ 10V	1700pF @ 15V	±20V	-	70W (Tc)	8.2 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86520	Fairchild/ON Semiconductor	MOSFET N-CH 60V 14A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock86,256	MOSFET (Metal Oxide)	60V	14A (Ta), 42A (Tc)	8V, 10V	4.5V @ 250µA	40nC @ 10V	2850pF @ 30V	±20V	-	2.5W (Ta), 69W (Tc)	7.4 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
SIA448DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock165,492	MOSFET (Metal Oxide)	20V	12A (Tc)	1.5V, 4.5V	1V @ 250µA	35nC @ 8V	1380pF @ 1V	±8V	-	3.5W (Ta), 19.2W (Tc)	15 mOhm @ 12.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
NVHL060N065SC1	onsemi	SIC MOS TO247-3L 650V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	47A (Tc)	15V, 18V	4.3V @ 6.5mA	74 nC @ 18 V	1473 pF @ 325 V	+22V, -8V	-	176W (Tc)	70mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMT68M8LFV-7	Diodes Incorporated	MOSFET N-CH 60V 54.1A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Stock4,389	MOSFET (Metal Oxide)	60 V	54.1A (Tc)	4.5V, 10V	3V @ 250µA	30 nC @ 10 V	2078 pF @ 30 V	±20V	-	2.7W (Ta), 41.7W (Tc)	9.5mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
PSMQC098N10LS2_R2_00201	Panjit International Inc.	100V/ 9.8M/ EXCELLECT LOW FOM MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock17,940	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ICE60N330	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	3.9V @ 250µA	43 nC @ 10 V	1250 pF @ 25 V	±20V	-	95W (Tc)	330mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SQJA86EP-T1_BE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual	Package: -	Stock16,137	MOSFET (Metal Oxide)	80 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	32 nC @ 10 V	1400 pF @ 25 V	±20V	-	48W (Tc)	19mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
UPA2700GR-E1-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA95R310PFD7XKSA1	Infineon Technologies	MOSFET N-CH 950V 8.7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-313 Package / Case: TO-220-3 Full Pack	Package: -	Stock1,314	MOSFET (Metal Oxide)	950 V	8.7A (Tc)	10V	3.5V @ 520µA	61 nC @ 10 V	1765 pF @ 400 V	±20V	-	31W (Tc)	310mOhm @ 10.4A, 10V	-55°C ~ 150°C	Through Hole	PG-TO220-3-313	TO-220-3 Full Pack
IPLK70R1K2P7ATMA1	Infineon Technologies	MOSFET N-CH 700V TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
AOSP66406	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	17A (Ta)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1480 pF @ 20 V	±20V	-	3.1W (Ta)	6.6mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQJ488EP-T1_BE3	Vishay Siliconix	MOSFET N-CH 100V 42A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	42A (Tc)	4.5V, 10V	2.5V @ 250µA	27 nC @ 10 V	978 pF @ 50 V	±20V	-	83W (Tc)	21mOhm @ 7.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STP22N60DM6	STMicroelectronics	MOSFET N-CH 600V 15A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	4.75V @ 250µA	20.6 nC @ 10 V	800 pF @ 100 V	±25V	-	130W (Tc)	240mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3