Page 1481 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD07N20GBTMA1
Infineon Technologies

MOSFET N-CH 200V 7A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,336
IRFR2905ZTRLPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
IRL8113STRL
Infineon Technologies

MOSFET N-CH 30V 105A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,528
IRF7460TR
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock44,028
JAN2N6770
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock4,032
BUK763R6-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,600
FDC655AN
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.3A 6-SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,423,164
SI7366DP-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 13A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,536
HAF1002-90STL-E
Renesas Electronics America

MOSFET P-CH 60V 15A 4LDPAK

Package: SC-83

Stock3,120
FDS4072N7
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,408
NTD40N03RT4
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock80,604
NTD80N02-001
ON Semiconductor

MOSFET N-CH 24V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock10,728
TK20S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,856
SCH1332-TL-H
ON Semiconductor

MOSFET P-CH 20V 2.5A SCH6

Package: SOT-563, SOT-666

Stock4,208
DMG2302UK-13
Diodes Incorporated

MOSFET NCH 20V 2.8A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,880
NX138AKVL
Nexperia USA Inc.

NX138AK/SOT23/TO-236AB

Package: -

Stock6,688
SIA414DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 8V 12A SC70-6

Package: PowerPAK? SC-70-6

Stock2,671,692
IRFB7430GPBF
Infineon Technologies

MOSFET N CH 40V 195A TO220AB

Package: TO-220-3

Stock46,200
DMP2066LVT-7
Diodes Incorporated

MOSFET P-CH 20V TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,128
FDS8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 18A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock261,036

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD07N20GBTMA1	Infineon Technologies	MOSFET N-CH 200V 7A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,336	MOSFET (Metal Oxide)	200V	7A (Tc)	10V	4V @ 1mA	31.5nC @ 10V	530pF @ 25V	±20V	-	40W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR2905ZTRLPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	44nC @ 10V	1380pF @ 25V	±20V	-	110W (Tc)	14.5 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL8113STRL	Infineon Technologies	MOSFET N-CH 30V 105A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,528	MOSFET (Metal Oxide)	30V	105A (Tc)	4.5V, 10V	2.25V @ 250µA	35nC @ 4.5V	2840pF @ 15V	±20V	-	110W (Tc)	6 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7460TR	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock44,028	MOSFET (Metal Oxide)	20V	12A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	2050pF @ 10V	±20V	-	2.5W (Ta)	10 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
JAN2N6770	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE (TO-3) Package / Case: TO-204AE	Package: TO-204AE	Stock4,032	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE (TO-3)	TO-204AE
BUK763R6-40C,118	Nexperia USA Inc.	MOSFET N-CH 40V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5708pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,600	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	97nC @ 10V	5708pF @ 25V	±20V	-	203W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDC655AN	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.3A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,423,164	MOSFET (Metal Oxide)	30V	6.3A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 5V	830pF @ 15V	±20V	-	1.6W (Ta)	27 mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
SI7366DP-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 13A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,536	MOSFET (Metal Oxide)	20V	13A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 4.5V	-	±20V	-	1.7W (Ta)	5.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
HAF1002-90STL-E	Renesas Electronics America	MOSFET P-CH 60V 15A 4LDPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +3V, -16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	Package: SC-83	Stock3,120	MOSFET (Metal Oxide)	60V	15A (Ta)	4V, 10V	-	-	-	+3V, -16V	-	50W (Tc)	90 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
FDS4072N7	Fairchild/ON Semiconductor	MOSFET N-CH 40V 12.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4299pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,408	MOSFET (Metal Oxide)	40V	12.4A (Ta)	4.5V, 10V	3V @ 250µA	46nC @ 4.5V	4299pF @ 20V	±12V	-	3W (Ta)	9 mOhm @ 13.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD40N03RT4	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock80,604	MOSFET (Metal Oxide)	25V	7.8A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	5.78nC @ 4.5V	584pF @ 20V	±20V	-	1.5W (Ta), 50W (Tc)	16.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD80N02-001	ON Semiconductor	MOSFET N-CH 24V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock10,728	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
TK20S06K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 20A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,856	MOSFET (Metal Oxide)	60V	20A (Ta)	6V, 10V	3V @ 1mA	18nC @ 10V	780pF @ 10V	±20V	-	38W (Tc)	29 mOhm @ 10A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1332-TL-H	ON Semiconductor	MOSFET P-CH 20V 2.5A SCH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock4,208	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	4.6nC @ 4.5V	375pF @ 10V	±10V	-	1W (Ta)	95 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
DMG2302UK-13	Diodes Incorporated	MOSFET NCH 20V 2.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,880	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	1V @ 250µA	2.8nC @ 10V	130pF @ 10V	±12V	-	660mW (Ta)	90 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NX138AKVL	Nexperia USA Inc.	NX138AK/SOT23/TO-236AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,688	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIA414DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock2,671,692	MOSFET (Metal Oxide)	8V	12A (Tc)	1.2V, 4.5V	800mV @ 250µA	32nC @ 5V	1800pF @ 4V	±5V	-	3.5W (Ta), 19W (Tc)	11 mOhm @ 9.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
IRFB7430GPBF	Infineon Technologies	MOSFET N CH 40V 195A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock46,200	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 250µA	460nC @ 10V	14240pF @ 25V	±20V	-	-	1.3 mOhm @ 100A, 10V	-	Through Hole	TO-220AB	TO-220-3
DMP2066LVT-7	Diodes Incorporated	MOSFET P-CH 20V TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1496pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,128	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	14.4nC @ 4.5V	1496pF @ 15V	±8V	-	1.2W (Ta)	45 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
FDS8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 18A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock261,036	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.5V @ 250µA	112nC @ 10V	4615pF @ 15V	±20V	-	2.5W (Ta)	4.2 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK9275-100A,118	Nexperia USA Inc.	MOSFET N-CH 100V 21.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock107,142	MOSFET (Metal Oxide)	100V	21.7A (Tc)	4.5V, 10V	2V @ 1mA	-	1690pF @ 25V	±10V	-	88W (Tc)	72 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI045N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 100A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Stock1,377	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	3.5V @ 150µA	117 nC @ 10 V	8410 pF @ 50 V	±20V	-	214W (Tc)	4.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2PAK, TO-262AA
PJL9430A_R2_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	2.5V @ 250µA	14 nC @ 10 V	815 pF @ 15 V	±20V	-	2.5W (Ta)	50mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
2SJ634-S-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPS03N60C3	Infineon Technologies	MOSFET N-CH 600V 3.2A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-11 Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.2A (Tc)	10V	3.9V @ 135µA	17 nC @ 10 V	400 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3-11	TO-251-3 Stub Leads, IPAK
FK4B01110L	Nuvoton Technology Corporation	SINGLE NCH MOSFET 12V, 2.3A 57MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 340mW (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: ALGA004-W-0606-RA01 Package / Case: 4-XFLGA	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	2.3A (Ta)	1.5V, 4.5V	1V @ 118µA	2.55 nC @ 4.5 V	274 pF @ 10 V	±8V	-	340mW (Ta)	64mOhm @ 1.5A, 4.5V	150°C	Surface Mount	ALGA004-W-0606-RA01	4-XFLGA
IRF840HPBF	Vishay Siliconix	POWER MOSFET TO220AB, 850 M @ 10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,066	MOSFET (Metal Oxide)	500 V	7.3A (Tc)	10V	4V @ 250µA	39 nC @ 10 V	1059 pF @ 25 V	±30V	-	125W (Tc)	850mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6025JNXC7G	Rohm Semiconductor	MOSFET N-CH 600V 25A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock5,913	MOSFET (Metal Oxide)	600 V	25A (Tc)	15V	7V @ 4.5mA	57 nC @ 15 V	1900 pF @ 100 V	±30V	-	85W (Tc)	182mOhm @ 12.5A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack