Page 1489 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPU18P06P
Infineon Technologies

MOSFET P-CH 60V 18.6A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock96,732
AON6970_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: -

Stock7,664
AON6418
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 14A SDMOS 8DFN

Package: 8-PowerSMD, Flat Leads

Stock10,320
FDP6035AL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 48A TO-220

Package: TO-220-3

Stock85,608
FDI33N25TU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 33A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,480
ZXMNS3BM832TA
Diodes Incorporated

MOSFET N-CH 30V 2A 8-MLP

Package: 8-VDFN Exposed Pad

Stock5,936
STB20NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,068
IPS50R520CPBKMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock7,520
DMNH4005SCT
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO220-3

Package: TO-220-3

Stock4,224
DMPH4015SSS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,240
SIHP17N80E-GE3
Vishay Siliconix

MOSFET N-CHAN 850V TO-220AB

Package: TO-220-3

Stock6,560
IXTY2N65X2
IXYS

MOSFET N-CH 650V 2A X2 TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,708
TK72A12N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 120V 72A TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,816
IRLR2908TRPBF
Infineon Technologies

MOSFET N-CH 80V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock241,140
DMN10H220LVT-7
Diodes Incorporated

MOSFET N-CH 100V 1.87A TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,960
ZXM64P02XTA
Diodes Incorporated

MOSFET P-CH 20V 3.5A 8-MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock33,816
FDS6612A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,541,696
ZXMP10A18KTC
Diodes Incorporated

MOSFET P-CH 100V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock227,424
BUK7M20-40HX
Nexperia USA Inc.

MOSFET N-CH 40V 25A LFPAK33

Package: -

Stock13,212
IPD70N03S4L04ATMA1
Infineon Technologies

MOSFET N-CH 30V 70A TO252-3

Package: -

Stock15,240

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPU18P06P	Infineon Technologies	MOSFET P-CH 60V 18.6A TO-251 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock96,732	MOSFET (Metal Oxide)	60V	18.6A (Tc)	10V	4V @ 1mA	33nC @ 10V	860pF @ 25V	±20V	-	-	130 mOhm @ 13.2A, 10V	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
AON6970_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,664	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON6418	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 14A SDMOS 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock10,320	MOSFET (Metal Oxide)	30V	14A (Ta), 36A (Tc)	4.5V, 10V	1.8V @ 250µA	33nC @ 10V	1229pF @ 15V	±20V	-	6W (Ta), 25W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
FDP6035AL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 48A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 24A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock85,608	MOSFET (Metal Oxide)	30V	48A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 5V	1250pF @ 15V	±20V	-	52W (Tc)	12 mOhm @ 24A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDI33N25TU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 33A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 235W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,480	MOSFET (Metal Oxide)	250V	33A (Tc)	10V	5V @ 250µA	48nC @ 10V	2135pF @ 25V	±30V	-	235W (Tc)	94 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
ZXMNS3BM832TA	Diodes Incorporated	MOSFET N-CH 30V 2A 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 314pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP, MicroFET (3x2) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock5,936	MOSFET (Metal Oxide)	30V	2A (Ta)	2.5V, 4.5V	700mV @ 250µA	2.9nC @ 4.5V	314pF @ 15V	±12V	Schottky Diode (Isolated)	1W (Ta)	180 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP, MicroFET (3x2)	8-VDFN Exposed Pad
STB20NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,068	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4.5V @ 100µA	119nC @ 10V	2600pF @ 25V	±30V	-	190W (Tc)	270 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPS50R520CPBKMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,520	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4005SCT	Diodes Incorporated	MOSFET BVDSS: 41V 60V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 20V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,224	MOSFET (Metal Oxide)	40V	150A (Tc)	10V	3V @ 250µA	48nC @ 10V	2846pF @ 20V	20V	-	165W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMPH4015SSS-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.8W Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,240	MOSFET (Metal Oxide)	40V	11.4A (Ta)	4.5V, 10V	2.5V @ 250µA	91nC @ 10V	4234pF @ 20V	±25V	-	1.8W	11 mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIHP17N80E-GE3	Vishay Siliconix	MOSFET N-CHAN 850V TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2408pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,560	MOSFET (Metal Oxide)	800V	15A (Tc)	10V	4V @ 250µA	122nC @ 10V	2408pF @ 100V	±30V	-	208W (Tc)	290 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY2N65X2	IXYS	MOSFET N-CH 650V 2A X2 TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,708	MOSFET (Metal Oxide)	650V	2A (Tc)	10V	5V @ 250µA	4.3nC @ 10V	180pF @ 25V	±30V	-	55W (Tc)	2.3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
TK72A12N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 120V 72A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 36A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,816	MOSFET (Metal Oxide)	120V	72A (Tc)	10V	4V @ 1mA	130nC @ 10V	8100pF @ 60V	±20V	-	45W (Tc)	4.5 mOhm @ 36A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
IRLR2908TRPBF	Infineon Technologies	MOSFET N-CH 80V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock241,140	MOSFET (Metal Oxide)	80V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 4.5V	1890pF @ 25V	±16V	-	120W (Tc)	28 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN10H220LVT-7	Diodes Incorporated	MOSFET N-CH 100V 1.87A TSOT26 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.67W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,960	MOSFET (Metal Oxide)	100V	1.87A (Ta)	4.5V, 10V	2.5V @ 250µA	8.3nC @ 10V	401pF @ 25V	±16V	-	1.67W (Ta)	220 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
ZXM64P02XTA	Diodes Incorporated	MOSFET P-CH 20V 3.5A 8-MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock33,816	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.7V, 4.5V	700mV @ 250µA	6.9nC @ 4.5V	900pF @ 15V	±12V	-	1.1W (Ta)	90 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
FDS6612A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,541,696	MOSFET (Metal Oxide)	30V	8.4A (Ta)	4.5V, 10V	3V @ 250µA	7.6nC @ 5V	560pF @ 15V	±20V	-	2.5W (Ta)	22 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ZXMP10A18KTC	Diodes Incorporated	MOSFET P-CH 100V 3.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.17W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock227,424	MOSFET (Metal Oxide)	100V	3.8A (Ta)	6V, 10V	4V @ 250µA	26.9nC @ 10V	1055pF @ 50V	±20V	-	2.17W (Ta)	150 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7M20-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 25A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 25 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 38W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock13,212	MOSFET (Metal Oxide)	40 V	25A (Ta)	10V	3.6V @ 1mA	10.2 nC @ 10 V	598 pF @ 25 V	+20V, -10V	-	38W (Ta)	20mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IPD70N03S4L04ATMA1	Infineon Technologies	MOSFET N-CH 30V 70A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock15,240	MOSFET (Metal Oxide)	30 V	70A (Tc)	4.5V, 10V	2.2V @ 30µA	48 nC @ 10 V	3300 pF @ 25 V	±16V	-	68W (Tc)	4.3mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUS240N08S5N019ATMA1	Infineon Technologies	MOSFET N-CH 80V 240A HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	Package: -	Stock7,548	MOSFET (Metal Oxide)	80 V	240A (Tc)	6V, 10V	3.8V @ 160µA	130 nC @ 10 V	9264 pF @ 40 V	±20V	-	230W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IPC60R180P7X7SA1	Infineon Technologies	MOSFET N-CH DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIRA01DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 26A/60A PPAK SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V Vgs (Max): +16V, -20V FET Feature: - Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock23,658	MOSFET (Metal Oxide)	30 V	26A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 250µA	112 nC @ 10 V	3490 pF @ 15 V	+16V, -20V	-	5W (Ta), 62.5W (Tc)	4.9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTBLS1D7N10MCTXG	onsemi	MOSFET, POWER, SINGLE N-CHANNEL, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 698µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	29A (Ta), 272A (Tc)	10V	4V @ 698µA	115 nC @ 10 V	9200 pF @ 50 V	±20V	-	3.4W (Ta), 295W (Tc)	1.8mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
NVMFS6H864NWFT1G	onsemi	MOSFET N-CH 80V 6.7A/21A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	80 V	6.7A (Ta), 21A (Tc)	10V	4V @ 20µA	6.9 nC @ 10 V	370 pF @ 40 V	±20V	-	3.5W (Ta), 33W (Tc)	32mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
FQB7P20TM-F085PC	onsemi	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 3.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	7.3A (Tc)	10V	5V @ 250µA	25 nC @ 10 V	770 pF @ 25 V	±30V	-	3.13W (Ta), 90W (Tc)	690mOhm @ 3.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G04P10HE	Goford Semiconductor	P-100V,-4A,RD(MAX)<200M@-10V,VTH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock28,437	MOSFET (Metal Oxide)	100 V	4A (Tc)	4.5V, 10V	2.8V @ 250µA	25 nC @ 10 V	1647 pF @ 50 V	±20V	-	1.2W (Tc)	200mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
2SK2552B-T1-AT	Renesas Electronics Corporation	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-