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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock48,000 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | ±16V | - | 130W (Tc) | 8 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 70A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15,192 |
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MOSFET (Metal Oxide) | 40V | 70A (Tc) | 4.5V, 10V | 3V @ 250µA | 75nC @ 10V | 2800pF @ 25V | ±20V | - | 3.75W (Ta), 100W (Tc) | 7.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 4.9A 1206-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock6,048 |
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MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | - | ±20V | - | 1.3W (Ta) | 35 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 59V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.69W (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock226,908 |
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MOSFET (Metal Oxide) | 59V | 2.6A (Ta) | 3V, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | ±15V | - | 1.69W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 12V 3.4A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1053pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock426,348 |
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MOSFET (Metal Oxide) | 12V | 3.4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 1053pF @ 6V | ±8V | - | 700mW (Ta) | 40 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 12.6A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock205,104 |
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MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 95A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 48nC @ 11.5V | 2865pF @ 12V | ±20V | - | 1.41W (Ta), 79W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 1.4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock256,452 |
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MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 4.5V @ 50µA | 10nC @ 10V | 170pF @ 25V | ±30V | - | 45W (Tc) | 8 Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 162W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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Package: TO-247-4 |
Stock3,056 |
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MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 162W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
TRANSISTOR N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,136 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET N-CH 150V WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WPAK(3F) (5x6)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,368 |
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MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | - | 19nC @ 10V | 1200pF @ 25V | ±30V | - | 65W (Tc) | 58 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 10A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 30V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
- Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock25,560 |
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MOSFET (Metal Oxide) | 75V | 10A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 136nC @ 10V | 5640pF @ 30V | ±25V | - | 2.1W (Ta), 268W (Tc) | 10.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 30V 20A SOT96-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock28,800 |
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MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 3V @ 1mA | 34nC @ 4.5V | 3100pF @ 25V | ±20V | - | 3.5W (Tc) | 5.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A UMT3F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3F
- Package / Case: SC-85
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Package: SC-85 |
Stock7,936 |
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MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1V @ 1mA | - | 25pF @ 10V | ±8V | - | 150mW (Ta) | 1.2 Ohm @ 200mA, 2.5V | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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EPC |
TRANS GAN 100V 2.8OHM BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: Die |
Stock1,891,686 |
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GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | +6V, -4V | - | - | 3.3 Ohm @ 50mA, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 195.3W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock22,596 |
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MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 195.3W (Tc) | 150 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 40V SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,186 |
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MOSFET (Metal Oxide) | 40V | 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13nC @ 10V | 555pF @ 10V | ±20V | - | 3W (Tc) | 31 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MPT3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock275,112 |
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MOSFET (Metal Oxide) | 60V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 10nC @ 4V | 160pF @ 10V | ±12V | - | 500mW (Ta) | 240 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | MPT3 | TO-243AA |
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onsemi |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
PSMN3R0-30YLD/SOT669/LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 91W (Ta)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 100A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 46.4 nC @ 10 V | 2939 pF @ 15 V | ±20V | Schottky Diode (Body) | 91W (Ta) | 3.1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
E SERIES POWER MOSFET THIN-LEAD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock6,000 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1465 pF @ 100 V | ±20V | - | 33W (Tc) | 89mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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onsemi |
MOSFET N-CH 30V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 13 nC @ 10 V | 620 pF @ 15 V | ±20V | - | 800mW (Tc) | 25mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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onsemi |
MOSFET N-CH 20V 3.2A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | - | 1.2V @ 250µA | 6 nC @ 4.5 V | 200 pF @ 10 V | - | - | - | 80mOhm @ 3.6A, 4.5V | - | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 4V @ 250µA | 100 nC @ 10 V | 3000 pF @ 25 V | - | - | 140W (Tc) | 5.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Renesas |
RQA0008 - N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 0 V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 10W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 16 V | 2.4A (Ta) | - | 800mV @ 1mA | - | 44 pF @ 0 V | ±5V | - | 10W (Tc) | - | 150°C | Surface Mount | UPAK | TO-243AA |
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Vishay Siliconix |
MOSFET N-CH 800V 4.4A TO251AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Stock8,985 |
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MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 321 pF @ 100 V | ±30V | - | 62.5W (Tc) | 1.35Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Panjit International Inc. |
700V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | 2A (Ta) | 10V | 4V @ 250µA | 7.8 nC @ 10 V | 260 pF @ 25 V | ±30V | - | 45W (Tc) | 6.5Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 38A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 329W (Tc)
- Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock6,165 |
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MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 4V @ 250µA | 62 nC @ 10 V | 2587 pF @ 100 V | ±30V | - | 329W (Tc) | 99mOhm @ 11.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V
- Vgs (Max): +20V, -5V
- FET Feature: -
- Power Dissipation (Max): 122W (Tc)
- Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock900 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 16A (Tc) | 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | 513 pF @ 1000 V | +20V, -5V | - | 122W (Tc) | 196mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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