Page 1495 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPA80R1K0CEXKSA1
Infineon Technologies

MOSFET N-CH 800V TO-220-3

Package: TO-220-3 Full Pack

Stock3,328
IRFR3103TR
Infineon Technologies

MOSFET N-CH 400V 1.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,000
STF30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A TO-220FP

Package: TO-220-3 Full Pack

Stock6,608
STP22NF03L
STMicroelectronics

MOSFET N-CH 30V 22A TO-220

Package: TO-220-3

Stock995,304
AUIRF2903Z
Infineon Technologies

MOSFET N-CH 30V 260A TO-220AB

Package: TO-220-3

Stock7,936
APT30M19JVFR
Microsemi Corporation

MOSFET N-CH 300V 130A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,136
IXFN40N110P
IXYS

MOSFET N-CH 1100V 34A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,960
IXTH52P10P
IXYS

MOSFET P-CH 100V 52A TO-247

Package: TO-247-3

Stock7,152
IXFQ10N80P
IXYS

MOSFET N-CH 800V 10A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,136
IXTY26P10T
IXYS

MOSFET P-CH 100V 26A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,272
AOI409
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 26A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock54,000
NTD2955T4G
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,394,460
FDD2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 29A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock57,084
PMBF170,235
Nexperia USA Inc.

MOSFET N-CH 60V 0.3A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,936
EPC2049ENGRT
EPC

GANFET N-CH 40V 16A DIE

Package: -

Request a Quote
IPD90P04P405AUMA2
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Package: -

Request a Quote
TK16G60W5-RVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

Package: -

Stock6,000
FDP085N10A-F102
onsemi

MOSFET N-CH 100V 96A TO220-3

Package: -

Stock729
IXFP26N65X2
IXYS

IXFP26N65X2

Package: -

Request a Quote
IRFW840BTM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA80R1K0CEXKSA1	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,328	MOSFET (Metal Oxide)	800V	3.6A (Tc)	10V	3.9V @ 250µA	31nC @ 10V	785pF @ 100V	±20V	-	32W (Tc)	950 mOhm @ 3.6A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRFR3103TR	Infineon Technologies	MOSFET N-CH 400V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,000	MOSFET (Metal Oxide)	400V	1.7A (Ta)	10V	4V @ 250µA	12nC @ 10V	170pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	3.6 Ohm @ 1A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF30NM60N	STMicroelectronics	MOSFET N-CH 600V 25A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,608	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	91nC @ 10V	2700pF @ 50V	±30V	-	40W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP22NF03L	STMicroelectronics	MOSFET N-CH 30V 22A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock995,304	MOSFET (Metal Oxide)	30V	22A (Tc)	5V, 10V	1V @ 250µA	9nC @ 5V	330pF @ 25V	±15V	-	45W (Tc)	50 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRF2903Z	Infineon Technologies	MOSFET N-CH 30V 260A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,936	MOSFET (Metal Oxide)	30V	160A (Tc)	10V	4V @ 250µA	240nC @ 10V	6320pF @ 25V	±20V	-	290W (Tc)	2.4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT30M19JVFR	Microsemi Corporation	MOSFET N-CH 300V 130A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 130A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 975nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,136	MOSFET (Metal Oxide)	300V	130A	10V	4V @ 5mA	975nC @ 10V	21600pF @ 25V	±30V	-	700W (Tc)	19 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IXFN40N110P	IXYS	MOSFET N-CH 1100V 34A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,960	MOSFET (Metal Oxide)	1100V	34A	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	890W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTH52P10P	IXYS	MOSFET P-CH 100V 52A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,152	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	4.5V @ 250µA	60nC @ 10V	2845pF @ 25V	±20V	-	300W (Tc)	50 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFQ10N80P	IXYS	MOSFET N-CH 800V 10A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,136	MOSFET (Metal Oxide)	800V	10A (Tc)	10V	5.5V @ 2.5mA	40nC @ 10V	2050pF @ 25V	±30V	-	300W (Tc)	1.1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTY26P10T	IXYS	MOSFET P-CH 100V 26A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,272	MOSFET (Metal Oxide)	100V	26A (Tc)	10V	4.5V @ 250µA	52nC @ 10V	3820pF @ 25V	±15V	-	150W (Tc)	90 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
AOI409	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 60V 26A TO251A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock54,000	MOSFET (Metal Oxide)	60V	26A (Tc)	4.5V, 10V	2.4V @ 250µA	54nC @ 10V	3600pF @ 30V	±20V	-	2.5W (Ta), 60W (Tc)	40 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
NTD2955T4G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,394,460	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 29A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock57,084	MOSFET (Metal Oxide)	150V	4A (Ta), 29A (Tc)	6V, 10V	4V @ 250µA	34nC @ 10V	1770pF @ 25V	±20V	-	135W (Tc)	54 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
PMBF170,235	Nexperia USA Inc.	MOSFET N-CH 60V 0.3A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,936	MOSFET (Metal Oxide)	60V	300mA (Ta)	4.5V, 10V	2V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Tc)	5 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
EPC2049ENGRT	EPC	GANFET N-CH 40V 16A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	GaNFET (Gallium Nitride)	40 V	16A (Ta)	5V	2.5V @ 6mA	7.6 nC @ 5 V	805 pF @ 20 V	+6V, -4V	-	-	5mOhm @ 15A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IPD90P04P405AUMA2	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	90A (Tc)	10V	4V @ 250µA	154 nC @ 10 V	10300 pF @ 25 V	±20V	-	125W (Tc)	4.7mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK16G60W5-RVQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock6,000	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	4.5V @ 790µA	43 nC @ 10 V	1350 pF @ 300 V	±30V	-	130W (Tc)	230mOhm @ 7.9A, 10V	150°C	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDP085N10A-F102	onsemi	MOSFET N-CH 100V 96A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock729	MOSFET (Metal Oxide)	100 V	96A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	2695 pF @ 50 V	±20V	-	188W (Tc)	8.5mOhm @ 96A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFP26N65X2	IXYS	IXFP26N65X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	5V @ 2.5mA	45 nC @ 10 V	2450 pF @ 25 V	±30V	-	460W (Tc)	130mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFW840BTM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	4V @ 250µA	53 nC @ 10 V	1800 pF @ 25 V	±30V	-	3.13W (Ta), 134W (Tc)	800mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP4N100PM	IXYS	MOSFET N-CH 1000V 2.1A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2.1A (Tc)	10V	6V @ 250µA	26 nC @ 10 V	1456 pF @ 25 V	±20V	-	40W (Tc)	3.3Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
NTNS41S006PZTCG	onsemi	NTNS41S006PZ - MOSFET 3-SON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN1004UFDF-13	Diodes Incorporated	MOSFET N-CH 12V 15A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	15A (Ta)	2.5V, 4.5V	1V @ 250µA	47 nC @ 10 V	2385 pF @ 6 V	±8V	-	2.1W (Ta)	4.8mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6	6-UDFN Exposed Pad
GT400P10K	Goford Semiconductor	MOSFET P-CH 100V 35A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,830	MOSFET (Metal Oxide)	100 V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	3128 pF @ 50 V	±20V	-	106W (Tc)	35mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
STP50N60DM6	STMicroelectronics	MOSFET N-CH 600V 36A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock2,205	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	4.75V @ 250µA	55 nC @ 10 V	2350 pF @ 100 V	±25V	-	250W (Tc)	80mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
AOSS62934	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 2A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Stock1,416,840	MOSFET (Metal Oxide)	100 V	2A (Ta)	4.5V, 10V	2.7V @ 250µA	3.8 nC @ 10 V	250 pF @ 50 V	±20V	-	1.4W (Ta)	140mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
IXFP72N30X3M	IXYS	MOSFET N-CH 300V 72A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	36W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
NTMFS4C908NAT1G	onsemi	TRENCH 6 30V NCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock13,500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-