Page 1498 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI16CN10N G
Infineon Technologies

MOSFET N-CH 100V 53A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,336
IRF3711L
Infineon Technologies

MOSFET N-CH 20V 110A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock41,208
IRFB33N15D
Infineon Technologies

MOSFET N-CH 150V 33A TO-220AB

Package: TO-220-3

Stock3,792
IRLI520N
Infineon Technologies

MOSFET N-CH 100V 8.1A TO220FP

Package: TO-220-3 Full Pack

Stock75,372
AOD522P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 17A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,192
FDU8580
Fairchild/ON Semiconductor

MOSFET N-CH 20V 35A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock120,732
HUF75343S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,368
IRFP450LC
Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC

Package: TO-247-3

Stock4,736
STW13NK50Z
STMicroelectronics

MOSFET N-CH 500V 11A TO-247

Package: TO-247-3

Stock4,480
IPC60R075CPX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock5,808
CSD17576Q5BT
Texas Instruments

N-CHANNEL NEXFET POWER MOSFET

Package: 8-PowerTDFN

Stock7,648
DMG3N60SJ3
Diodes Incorporated

MOSFET BVDSS: 501V 650V TO251

Package: TO-251-3, IPak, Short Leads

Stock2,144
SQ1440EH-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 1.6A SC70-6

Package: -

Stock3,360
DMN62D1SFB-7B
Diodes Incorporated

MOSFET N-CH 60V 410MA 3DFN

Package: 3-UFDFN

Stock7,280
IPD30N03S4L-09
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,012
STD40NF3LLT4
STMicroelectronics

MOSFET N-CH 30V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock572,580
SIS888DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 150V 20.2A 1212-8S

Package: PowerPAK? 1212-8S

Stock23,850
SI3457DV
Fairchild/ON Semiconductor

MOSFET P-CH 30V 4A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,719,504
RZM001P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VMT3

Package: SOT-723

Stock7,072
H7N0608LS90TL-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI16CN10N G	Infineon Technologies	MOSFET N-CH 100V 53A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,336	MOSFET (Metal Oxide)	100V	53A (Tc)	10V	4V @ 61µA	48nC @ 10V	3220pF @ 50V	±20V	-	100W (Tc)	16.2 mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3711L	Infineon Technologies	MOSFET N-CH 20V 110A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock41,208	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFB33N15D	Infineon Technologies	MOSFET N-CH 150V 33A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,792	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5.5V @ 250µA	90nC @ 10V	2020pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	56 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLI520N	Infineon Technologies	MOSFET N-CH 100V 8.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock75,372	MOSFET (Metal Oxide)	100V	8.1A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	30W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
AOD522P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 17A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,192	MOSFET (Metal Oxide)	30V	17A (Ta), 46A (Tc)	4.5V, 10V	2.4V @ 250µA	18nC @ 10V	1500pF @ 15V	±20V	-	2.5W (Ta), 53W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDU8580	Fairchild/ON Semiconductor	MOSFET N-CH 20V 35A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1445pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 49.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock120,732	MOSFET (Metal Oxide)	20V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	27nC @ 10V	1445pF @ 10V	±20V	-	49.5W (Tc)	9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
HUF75343S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,368	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	205nC @ 20V	3000pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP450LC	Vishay Siliconix	MOSFET N-CH 500V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,736	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	74nC @ 10V	2200pF @ 25V	±30V	-	190W (Tc)	400 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW13NK50Z	STMicroelectronics	MOSFET N-CH 500V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,480	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	1600pF @ 25V	±30V	-	140W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPC60R075CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,808	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CSD17576Q5BT	Texas Instruments	N-CHANNEL NEXFET POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,648	MOSFET (Metal Oxide)	30V	100A (Ta)	4.5V, 10V	1.8V @ 250µA	32nC @ 4.5V	4430pF @ 15V	±20V	-	3.1W (Ta), 125W (Tc)	2 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
DMG3N60SJ3	Diodes Incorporated	MOSFET BVDSS: 501V 650V TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3, IPak, Short Leads	Package: TO-251-3, IPak, Short Leads	Stock2,144	MOSFET (Metal Oxide)	650V	2.8A (Tc)	10V	4V @ 250µA	12.6nC @ 10V	354pF @ 25V	±30V	-	41W (Tc)	3.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3, IPak, Short Leads
SQ1440EH-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 1.6A SC70-6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,360	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D1SFB-7B	Diodes Incorporated	MOSFET N-CH 60V 410MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 40mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock7,280	MOSFET (Metal Oxide)	60V	410mA (Ta)	4.5V, 10V	2.3V @ 250µA	2.8nC @ 10V	80pF @ 40V	±20V	-	470mW (Ta)	1.4 Ohm @ 40mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006 (1.0x0.6)	3-UFDFN
IPD30N03S4L-09	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,012	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.2V @ 13µA	20nC @ 10V	1520pF @ 15V	±16V	-	42W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STD40NF3LLT4	STMicroelectronics	MOSFET N-CH 30V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock572,580	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	80W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SIS888DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 20.2A 1212-8S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3) Package / Case: PowerPAK? 1212-8S	Package: PowerPAK? 1212-8S	Stock23,850	MOSFET (Metal Oxide)	150V	20.2A (Tc)	7.5V, 10V	4.2V @ 250µA	14.5nC @ 10V	420pF @ 75V	±20V	-	52W (Tc)	58 mOhm @ 10A, 10V	-55°C ~ 150°C (TA)	Surface Mount	PowerPAK? 1212-8S (3.3x3.3)	PowerPAK? 1212-8S
SI3457DV	Fairchild/ON Semiconductor	MOSFET P-CH 30V 4A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,719,504	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	3V @ 250µA	8.1nC @ 5V	470pF @ 25V	±25V	-	1.6W (Ta)	50 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
RZM001P02T2L	Rohm Semiconductor	MOSFET P-CH 20V 0.1A VMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock7,072	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	150mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
H7N0608LS90TL-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI7485DP-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 12.5A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	-	900mV @ 1mA	150 nC @ 5 V	-	-	-	-	7.3mOhm @ 20A, 4.5V	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IXTA130N15X4-7	IXYS	MOSFET N-CH 150V 130A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 250µA	87 nC @ 10 V	4770 pF @ 25 V	±20V	-	400W (Tc)	8mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7 (IXTA)	TO-263-7, D2PAK (6 Leads + Tab)
MCB160N10Y-TP	Micro Commercial Co	MOSFET N-CH D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4803 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223W Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	160A (Tc)	4.5V, 10V	3V @ 250µA	105 nC @ 10 V	4803 pF @ 50 V	±20V	-	223W	4mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDN339AN_G	onsemi	MOSFET N-CH 20V 3A SUPERSOT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10 nC @ 4.5 V	700 pF @ 10 V	±8V	-	500mW (Ta)	35mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
AOSP32320C	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 8.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock52,809	MOSFET (Metal Oxide)	30 V	8.5A (Ta)	4.5V, 10V	2.3V @ 250µA	20 nC @ 10 V	650 pF @ 15 V	±20V	-	2.5W (Ta)	22mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TQM043NH04CR-RLG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock15,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISC012N04NM6ATMA1	Infineon Technologies	TRENCH <= 40V PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 747µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock41,664	MOSFET (Metal Oxide)	40 V	36A (Ta), 232A (Tc)	6V, 10V	2.8V @ 747µA	64 nC @ 10 V	4600 pF @ 20 V	±20V	-	3W (Ta), 125W (Tc)	1.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
MCTL160N15Y-TP	Micro Commercial Co	N-CHANNEL MOSFET, TOLL-8L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9440 pF @ 75 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL-8L Package / Case: 8-PowerSFN	Package: -	Stock12,000	MOSFET (Metal Oxide)	150 V	160A (Tc)	6V, 10V	4V @ 250µA	157 nC @ 10 V	9440 pF @ 75 V	±25V	-	357W (Tj)	6.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL-8L	8-PowerSFN