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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock14,196 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | - | 300W (Tc) | 3.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock8,172 |
|
MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | ±8V | - | 2.5W (Ta) | 14 mOhm @ 11.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 26A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,864 |
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MOSFET (Metal Oxide) | 100V | 26A (Ta) | 4V, 10V | - | 44nC @ 10V | 2150pF @ 20V | ±20V | - | 1.65W (Ta), 50W (Tc) | 60 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | TO-263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 38.3A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
Package: PowerPAK? 1212-8 |
Stock6,624 |
|
MOSFET (Metal Oxide) | 30V | 38.3A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 21.5nC @ 10V | 1000pF @ 15V | +20V, -16V | - | 3.2W (Ta), 19.8W (Tc) | 7.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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IXYS |
MOSFET N-CH ECO-PAC2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ECO-PAC2
- Package / Case: ECO-PAC2
|
Package: ECO-PAC2 |
Stock3,008 |
|
MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Chassis Mount | ECO-PAC2 | ECO-PAC2 |
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NXP |
MOSFET N-CH 25V 75A SOT533
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,192 |
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MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 16.3nC @ 4.5V | 1375pF @ 12V | ±20V | - | 187W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 700V 6.4A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 152W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 700V | 6.4A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1400pF @ 25V | ±30V | - | 152W (Tc) | 1.5 Ohm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 30V 12A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SQ
- Package / Case: DirectFET? Isometric SQ
|
Package: DirectFET? Isometric SQ |
Stock27,672 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 55A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 17.5nC @ 4.5V | 1460pF @ 15V | ±20V | - | 2.2W (Ta), 42W (Tc) | 9.1 mOhm @ 12A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
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IXYS |
MOSFET N-CH 500V 12A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,248 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 5.5V @ 250µA | 29nC @ 10V | 1830pF @ 25V | ±30V | - | 200W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4682pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,152 |
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MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 4V @ 1mA | 59.8nC @ 10V | 4682pF @ 25V | ±20V | - | 182W (Tc) | 9.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 60V 57A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 28.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,608 |
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MOSFET (Metal Oxide) | 60V | 57A (Tc) | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | - | 90W (Tc) | 8.8 mOhm @ 28.5A, 10V | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 30V 9A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock81,048 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 44A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.3nC @ 10V | 1004pF @ 15V | ±20V | - | 920mW (Ta), 21.6W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock7,280 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | - | 10nC @ 10V | 430pF @ 10V | ±20V | - | 1.6W (Ta) | 59 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 650V 7A I2PAKFP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock3,584 |
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MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 12.5nC @ 10V | 410pF @ 100V | ±25V | - | 25W (Tc) | 670 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
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Infineon Technologies |
MOSFET N-CH 30V 56A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock42,576 |
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MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 2.25V @ 25µA | 14nC @ 4.5V | 1150pF @ 15V | ±20V | - | 50W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 300V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,440 |
|
MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 6.5V @ 4mA | 65nC @ 10V | 3160pF @ 25V | ±20V | - | 690W (Tc) | 80 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 20A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock22,680 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 590pF @ 25V | ±25V | - | 53W (Tc) | 60 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Rohm Semiconductor |
MOSFET N-CH 45V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock145,728 |
|
MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | - | 16.8nC @ 5V | 1000pF @ 10V | 20V | - | 2W (Ta) | 25 mOhm @ 7A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 28A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5315pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6), Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock80,976 |
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MOSFET (Metal Oxide) | 30V | 28A (Ta), 116A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 88nC @ 10V | 5315pF @ 15V | ±20V | - | 2.5W (Ta), 78W (Tc) | 2 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 1000V 6A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,668 |
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MOSFET (Metal Oxide) | 1000V | 6A (Tc) | - | - | 95nC @ 5V | 2650pF @ 25V | ±20V | Depletion Mode | 300W (Tc) | 2.2 Ohm @ 3A, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 30V 24A 8-SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,696 |
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MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.35V @ 100µA | 66nC @ 4.5V | 5720pF @ 15V | ±20V | - | 2.5W (Ta) | 2.8 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock11,472 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | ±20V | - | 375W (Tc) | 2.5 mOhm @ 170A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 1A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock120,180 |
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MOSFET (Metal Oxide) | 100V | 1A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | ±30V | - | 2W (Tc) | 1.05 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock8,802 |
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MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 56 nC @ 10 V | 4210 pF @ 25 V | ±20V | - | 150W (Tc) | 1.6mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Goford Semiconductor |
P-60V,-18A,RD(MAX)<70M@-10V,VTH-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock4,845 |
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MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1446 pF @ 30 V | ±20V | - | 32W (Tc) | 70mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
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Fairchild Semiconductor |
1-ELEMENT, N-CHANNEL POWER MOSFE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET N-CH 100V PWRDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 8.4A (Ta), 50.5A (Tc) | 6V, 10V | 4V @ 250µA | 30.1 nC @ 10 V | 2343 pF @ 50 V | ±20V | - | 1.5W (Ta), 55W (Tc) | 14.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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MOSLEADER |
N 20V 6A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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