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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,888 |
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MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 82W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock12,696 |
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MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | - | 82W (Tc) | 300 mOhm @ 5.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 60V 5.1A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,104 |
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MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | - | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V TO220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,512 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 20V 4.5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock35,400 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 7.3nC @ 4.5V | 670pF @ 10V | ±10V | - | 1.5W (Ta) | 49 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 0V
- Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,080 |
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MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5V @ 250µA | 34nC @ 0V | 873pF @ 25V | ±30V | - | 40W (Tc) | 1 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A TO-220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-2 Full Pack
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Package: TO-220-2 Full Pack |
Stock2,368 |
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MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 4V @ 1mA | 25nC @ 10V | 950pF @ 25V | ±30V | - | 40W (Tc) | 1.2 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 0.22A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.06V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,560 |
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MOSFET (Metal Oxide) | 25V | 220mA (Ta) | 2.7V, 4.5V | 1.06V @ 250µA | 0.7nC @ 4.5V | 9.5pF @ 10V | 8V | - | 350mW (Ta) | 4 Ohm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 24V 15.9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock442,800 |
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MOSFET (Metal Oxide) | 24V | 95A (Ta), 120.5A (Tc) | 4.5V, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | ±20V | - | 1.98W (Ta), 113.6W (Tc) | 4.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,360 |
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MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 3.7W (Ta), 60W (Tc) | 270 mOhm @ 5.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 120A D2PAK7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 246W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock22,800 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.5V @ 250µA | 178nC @ 10V | 13530pF @ 40V | ±20V | - | 246W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-7, D2Pak (6 Leads + Tab) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,384 |
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MOSFET (Metal Oxide) | 60V | 25A | - | - | 29nC @ 10V | - | - | - | - | 18 mOhm @ 12.5A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 44A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock17,856 |
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MOSFET (Metal Oxide) | 100V | 44A (Tc) | 10V | 4.5V @ 25µA | 33nC @ 10V | 1262pF @ 25V | ±30V | - | 130W (Tc) | 30 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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EPC |
TRANS GAN 80V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: Die |
Stock7,752 |
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GaNFET (Gallium Nitride) | 80V | 60A (Ta) | 5V | 2.5V @ 14mA | 15nC @ 5V | 1700pF @ 40V | +6V, -4V | - | - | 2.5 mOhm @ 29A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
MOSFET N-CH 60V 98A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock11,196 |
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MOSFET (Metal Oxide) | 60V | 98A (Tc) | 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | ±20V | - | 115W (Tc) | 5.7 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 18.3A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,492 |
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MOSFET (Metal Oxide) | 60V | 18.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | ±20V | - | 2.3W (Ta), 38.5W (Tc) | 60 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
30V, 5A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 7 nC @ 5 V | 555 pF @ 15 V | ±20V | - | 3W (Ta) | 60mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 650V 60A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Stock300 |
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MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 5V @ 250µA | 120 nC @ 10 V | 5500 pF @ 100 V | ±25V | - | 446W (Tc) | 50mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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onsemi |
TRENCH 8 80V NFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 8.4A (Ta) | 6V, 10V | 4V @ 30µA | 8.9 nC @ 10 V | 510 pF @ 40 V | ±20V | - | 3.5W (Ta) | 20.7mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Rohm Semiconductor |
MOSFET N-CH 60V 250MA DFN1010-3W
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010-3W
- Package / Case: 3-XFDFN
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Package: - |
Stock19,356 |
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MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | - | 2.3V @ 1mA | - | 15 pF @ 25 V | ±20V | - | 1W (Ta) | 2.4Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | DFN1010-3W | 3-XFDFN |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tj)
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 4.5V @ 250µA | 14 nC @ 10 V | 502 pF @ 25 V | ±20V | - | 56.8W (Tj) | 950mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6) Single Die
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 44A (Tc) | - | 2.35V @ 25µA | 12 nC @ 4.5 V | 1125 pF @ 15 V | - | - | - | 8.1mOhm @ 15A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 15A/40A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-SMD, Flat Lead
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24 nC @ 10 V | 1380 pF @ 15 V | ±20V | - | 3.1W (Ta), 25W (Tc) | 7.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-SMD, Flat Lead |
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Renesas Electronics Corporation |
P-CHANNEL SMALL SIGNAL MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 40A 8TSDSON-33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-33
- Package / Case: 8-PowerTDFN
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Package: - |
Stock60,816 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 3.8V @ 27µA | 24 nC @ 10 V | 1525 pF @ 50 V | ±20V | - | 68W (Tc) | 13mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 4.5V @ 250µA | 23 nC @ 10 V | 510 pF @ 25 V | ±30V | - | 74W (Tc) | 2.2Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH X2-DFN1006-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.737 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 810mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.737 nC @ 4.5 V | 60.67 pF @ 16 V | ±6V | - | 460mW (Ta) | 400mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |