|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock68,100 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | ±20V | - | 215W (Tc) | 8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 3A 6-SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,712 |
|
MOSFET (Metal Oxide) | 80V | 3A (Ta) | 6V, 10V | 4V @ 250µA | 18nC @ 10V | 634pF @ 40V | ±20V | - | 1.6W (Ta) | 77 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
|
|
IXYS |
MOSFET N-CH 75V 128A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock3,888 |
|
MOSFET (Metal Oxide) | 75V | 128A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 160W (Tc) | 4.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 55A TO-3PN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock109,224 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 214W (Tc) | 26 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 50V 15A TO-252AA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock279,396 |
|
MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 4V @ 250µA | 150nC @ 20V | 1150pF @ 25V | ±20V | - | 80W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 31A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 31A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 355W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock4,544 |
|
MOSFET (Metal Oxide) | 600V | 31A | 10V | 5V @ 2.5mA | 215nC @ 10V | 5890pF @ 25V | ±30V | - | 355W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
|
|
Renesas Electronics America |
MOSFET N-CH 75V 70A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,792 |
|
MOSFET (Metal Oxide) | 75V | 70A (Ta) | 10V | - | 56nC @ 10V | 4150pF @ 10V | ±20V | - | 25W (Tc) | 6.7 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
IXYS |
MOSFET N-CH 1000V 1.4A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,336 |
|
MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 4.5V @ 50µA | 17.8nC @ 10V | 450pF @ 25V | ±20V | - | 63W (Tc) | 11 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 115mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,336 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 2V @ 250µA | 0.87nC @ 10V | 22pF @ 25V | ±20V | - | 370mW (Ta) | 3 Ohm @ 115mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 20V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock5,520 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 150nC @ 20V | 7150pF @ 20V | +20V, -16V | - | 48W (Tc) | 1.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
ON Semiconductor |
MOSFET N-CH 60V 3A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock7,808 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±15V | - | 1.3W (Ta) | 120 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Infineon Technologies |
MOSFET P-CH 20V 15A 2X2 PQFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
|
Package: 6-PowerVDFN |
Stock119,160 |
|
MOSFET (Metal Oxide) | 20V | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | ±12V | - | 2.1W (Ta), 9.6W (Tc) | 31 mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 56A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14685pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock10,248 |
|
MOSFET (Metal Oxide) | 800V | 56A (Tc) | 10V | 4.5V @ 5.8mA | 350nC @ 10V | 14685pF @ 100V | ±20V | Super Junction | 500W (Tc) | 60 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 30V 9.8A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1.54W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,448 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 43nC @ 10V | 1849pF @ 15V | ±12V | Schottky Diode (Body) | 1.54W (Ta) | 13 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 700MA SC59-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock420,000 |
|
MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | - | 180pF @ 10V | ±12V | - | 500mW (Ta) | 300 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
Nexperia USA Inc. |
MOSFET N-CH 100V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock32,802 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | ±20V | - | 338W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: SOT-23-3 Flat Leads |
Stock23,826 |
|
MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | +10V, -20V | - | 2W (Ta) | 134 mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
Texas Instruments |
MOSFET N-CH 60V 100A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock15,360 |
|
MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 36nC @ 10V | 2750pF @ 30V | ±20V | - | 3.2W (Ta), 116W (Tc) | 5.9 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 21A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
|
Package: 8-PowerSMD, Flat Leads |
Stock231,900 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 34A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 1540pF @ 15V | ±20V | - | 3.1W (Ta), 31W (Tc) | 4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
|
|
Central Semiconductor Corp |
MOSFET N-CH 20V 100MA SOT883VL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883VL
- Package / Case: SC-101, SOT-883
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 900mV @ 250µA | 0.57 nC @ 4.5 V | 9 pF @ 3 V | 10V | - | 100mW (Ta) | 3Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
|
|
Microchip Technology |
MOSFET N-CH 500V 26A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 1mA | 225 nC @ 10 V | 4440 pF @ 25 V | ±30V | - | 300W (Tc) | 200mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
|
|
Panjit International Inc. |
700V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 831 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 6A (Ta) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 831 pF @ 25 V | ±30V | - | 128W (Tc) | 1.7Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock6,150 |
|
MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | 683 pF @ 50 V | ±20V | - | 3.4W (Ta), 68W (Tc) | 32mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
|
|
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4115 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 129 nC @ 10 V | 4115 pF @ 25 V | ±16V | - | 260W (Tc) | 8mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 40V 160A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 160A (Tc) | - | 3V @ 250µA | 140 nC @ 5 V | 6590 pF @ 25 V | ±20V | - | 200W (Tc) | 4mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 300V 430MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 300 V | 430mA (Ta) | 4.5V, 10V | 3V @ 250µA | 4.8 nC @ 10 V | 174 pF @ 25 V | ±20V | - | 360mW (Ta) | 4Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 7.2A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 45 nC @ 10 V | 2083 pF @ 20 V | ±20V | - | 1.5W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |