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Infineon Technologies |
MOSFET N-CH 100V 21A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 44µA
- Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,640 |
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MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | ±20V | - | 90W (Tc) | 80 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-220? (TO-273AA)
- Package / Case: Super-220?-3 (Straight Leads)
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Package: Super-220?-3 (Straight Leads) |
Stock11,916 |
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MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 7660pF @ 25V | ±16V | - | 300W (Tc) | 4 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220? (TO-273AA) | Super-220?-3 (Straight Leads) |
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IXYS |
MOSFET N-CH 100V 250A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 730W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock3,824 |
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MOSFET (Metal Oxide) | 100V | 250A (Tc) | 10V | 4V @ 250µA | 430nC @ 10V | 12700pF @ 25V | ±20V | - | 730W (Tc) | 5 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET N-CH 60V 12A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock120,132 |
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MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | ±20V | - | 1.5W (Ta), 48W (Tj) | 94 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock452,232 |
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MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 600 mOhm @ 4.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,288 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 800V 15A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock2,976 |
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MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 4.5V @ 4mA | 90nC @ 10V | 4300pF @ 25V | ±20V | - | 300W (Tc) | 600 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 55V 64A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,912 |
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MOSFET (Metal Oxide) | 55V | 64A (Tc) | - | 4V @ 25µA | - | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 104A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,488 |
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MOSFET (Metal Oxide) | 75V | 85A (Tc) | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | ±20V | - | 140W (Tc) | 6.7 mOhm @ 51A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock7,088 |
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MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | ±30V | - | 30W (Tc) | 650 mOhm @ 3.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET P-CH 20V 6.6A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN1616-6
- Package / Case: 6-UFDFN Exposed Pad
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Package: 6-UFDFN Exposed Pad |
Stock3,136 |
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MOSFET (Metal Oxide) | 20V | 6.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 44nC @ 8V | 2200pF @ 10V | ±8V | - | 740mW (Ta) | 24 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1616-6 | 6-UFDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 650V 20A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,728 |
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MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1440pF @ 100V | ±25V | - | 30W (Tc) | 180 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock1,578,648 |
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MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | ±20V | - | 1W (Ta) | 75 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8A 6-SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock566,292 |
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MOSFET (Metal Oxide) | 30V | 8A (Ta), 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 18nC @ 10V | 1040pF @ 15V | ±20V | - | 1.6W (Ta) | 16 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 22A (Tc) | 10V | 4V @ 250µA | 152 nC @ 20 V | 2200 pF @ 25 V | ±20V | - | 180W (Tc) | 125mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 60V 90A, HSOP8, POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 73W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock6,258 |
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MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 28 nC @ 10 V | 1950 pF @ 30 V | ±20V | - | 3W (Ta), 73W (Tc) | 4.7mOhm @ 90A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 42A/408A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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Package: - |
Stock10,371 |
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MOSFET (Metal Oxide) | 80 V | 42A (Ta), 408A (Tc) | 6V, 10V | 3.8V @ 280µA | 223 nC @ 10 V | 17000 pF @ 40 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.1mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 700V 4.5A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Stock12 |
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MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 3.5V @ 40µA | 4.8 nC @ 400 V | 174 pF @ 400 V | ±16V | - | 25W (Tc) | 1.2Ohm @ 900mA, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Stock2,529 |
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MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 4V @ 250µA | 39 nC @ 10 V | 1100 pF @ 25 V | ±30V | - | 125W (Tc) | 1.2Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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onsemi |
MOSFET N-CH 80V 11A/42A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock7,950 |
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MOSFET (Metal Oxide) | 80 V | 11A (Ta), 42A (Tc) | 4.5V, 10V | 2V @ 45µA | 17 nC @ 10 V | 906 pF @ 40 V | ±20V | - | 3.6W (Ta), 54W (Tc) | 13.1mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 620mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 1.6 nC @ 8 V | 54 pF @ 15 V | ±8V | - | 460mW (Ta) | 1Ohm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 40 V | 13.3A (Ta), 67A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59 nC @ 10 V | 3477 pF @ 25 V | ±25V | - | 3W (Ta), 75W (Tc) | 9.4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 100A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.03W
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type K)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock5,814 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4V @ 250µA | 79.5 nC @ 10 V | 6968 pF @ 20 V | ±20V | - | 3.03W | 1.8mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6239 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 153A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 116 nC @ 10 V | 6239 pF @ 50 V | ±20V | - | 4W (Ta), 150W (Tc) | 4.2mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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onsemi |
MOSFET P-CH 20V 3.3A SOT-363
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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IceMOS Technology |
Superjunction MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 236W (Tc)
- Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 3.9V @ 250µA | 59 nC @ 10 V | 2064 pF @ 25 V | ±20V | - | 236W (Tc) | 199mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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onsemi |
MOSFET N-CH 60V 120A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Stock2,175 |
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MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4V @ 250µA | 99 nC @ 10 V | 8030 pF @ 30 V | ±20V | - | 205W (Tc) | 3.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Panjit International Inc. |
20V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: 3-UFDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 300mA (Ta) | 1.2V, 4.5V | 1V @ 250µA | 0.9 nC @ 4.5 V | 45 pF @ 10 V | ±10V | - | 700mW (Ta) | 1.2Ohm @ 300mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | 3-UFDFN |