Page 2 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFS8409
Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,448
IRLR3303TRR
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock72,000
SI3483DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.7A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock7,840
NDF04N62ZG
ON Semiconductor

MOSFET N-CH 620V 4.4A TO220FP

Package: TO-220-3 Full Pack

Stock4,128
IXFC52N30P
IXYS

MOSFET N-CH 300V 24A ISOPLUS220

Package: ISOPLUS220?

Stock5,808
STD40N2LH5
STMicroelectronics

MOSFET N-CH 25V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock157,212
STB80NF55-08-1
STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,464
IRF6893MTRPBF
Infineon Technologies

MOSFET N-CH 25V 29A MX

Package: DirectFET? Isometric MX

Stock6,224
IRFR3709ZTRLPBF
Infineon Technologies

MOSFET N-CH 30V 86A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,620
NVMFS5C404NAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,856
TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-220SIS

Package: TO-220-3 Full Pack

Stock5,184
APT38F50J
Microsemi Corporation

MOSFET N-CH 500V 38A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,272
IRLZ24LPBF
Vishay Siliconix

MOSFET N-CH 60V 17A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock23,400
DMG4468LFG-7
Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

Package: 8-PowerUDFN

Stock35,736
IXFH21N50F
IXYS

MOSFET N-CH 500V 21A TO247

Package: TO-247-3

Stock7,296
IPW65R280E6
Infineon Technologies

MOSFET N-CH 650V 13.8A TO247

Package: TO-247-3

Stock11,244
NDF06N60ZG
ON Semiconductor

MOSFET N-CH 600V 7.1A TO-220FP

Package: TO-220-3 Full Pack

Stock67,452
ZXMN3B04N8TA
Diodes Incorporated

MOSFET N-CH 30V 8.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock527,916
SIS890ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 7.6A/24.7A PPAK

Package: -

Stock2,265
IXFP72N20X3M
IXYS

MOSFET N-CH 200V 72A TO220

Package: -

Stock3

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFS8409	Infineon Technologies	MOSFET N-CH 40V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,448	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	3.9V @ 250µA	450nC @ 10V	14240pF @ 25V	±20V	-	375W (Tc)	1.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3303TRR	Infineon Technologies	MOSFET N-CH 30V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock72,000	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	31 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI3483DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 4.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,840	MOSFET (Metal Oxide)	30V	4.7A (Ta)	4.5V, 10V	3V @ 250µA	35nC @ 10V	-	±20V	-	1.14W (Ta)	35 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NDF04N62ZG	ON Semiconductor	MOSFET N-CH 620V 4.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,128	MOSFET (Metal Oxide)	620V	4.4A (Tc)	10V	4.5V @ 50µA	19nC @ 10V	535pF @ 25V	±30V	-	28W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IXFC52N30P	IXYS	MOSFET N-CH 300V 24A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,808	MOSFET (Metal Oxide)	300V	24A (Tc)	10V	5V @ 4mA	110nC @ 10V	3490pF @ 25V	±20V	-	100W (Tc)	75 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
STD40N2LH5	STMicroelectronics	MOSFET N-CH 25V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock157,212	MOSFET (Metal Oxide)	25V	40A (Tc)	5V, 10V	1V @ 250µA	6.3nC @ 5V	700pF @ 20V	±22V	-	35W (Tc)	11.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB80NF55-08-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,464	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	155nC @ 10V	3850pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6893MTRPBF	Infineon Technologies	MOSFET N-CH 25V 29A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 29A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,224	MOSFET (Metal Oxide)	25V	29A (Ta), 168A (Tc)	4.5V, 10V	2.1V @ 100µA	38nC @ 4.5V	3480pF @ 13V	±16V	-	2.1W (Ta), 69W (Tc)	1.6 mOhm @ 29A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRFR3709ZTRLPBF	Infineon Technologies	MOSFET N-CH 30V 86A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,620	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.25V @ 250µA	26nC @ 4.5V	2330pF @ 15V	±20V	-	79W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C404NAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,856	MOSFET (Metal Oxide)	40V	53A (Ta), 378A (Tc)	10V	4V @ 250µA	128nC @ 10V	8400pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	0.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
TK12A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,184	MOSFET (Metal Oxide)	600V	12A (Ta)	10V	4V @ 1mA	38nC @ 10V	1800pF @ 25V	±30V	-	45W (Tc)	550 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
APT38F50J	Microsemi Corporation	MOSFET N-CH 500V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 355W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,272	MOSFET (Metal Oxide)	500V	38A	10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	±30V	-	355W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IRLZ24LPBF	Vishay Siliconix	MOSFET N-CH 60V 17A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock23,400	MOSFET (Metal Oxide)	60V	17A (Tc)	4V, 5V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±10V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
DMG4468LFG-7	Diodes Incorporated	MOSFET N-CH 30V 7.62A DFN3030-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 11.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN3030-8 Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock35,736	MOSFET (Metal Oxide)	30V	7.62A (Ta)	4.5V, 10V	2V @ 250µA	18.85nC @ 10V	867pF @ 10V	±20V	-	990mW (Ta)	15 mOhm @ 11.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN3030-8	8-PowerUDFN
IXFH21N50F	IXYS	MOSFET N-CH 500V 21A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,296	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	5.5V @ 4mA	77nC @ 10V	2600pF @ 25V	±20V	-	300W (Tc)	250 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IPW65R280E6	Infineon Technologies	MOSFET N-CH 650V 13.8A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,244	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
NDF06N60ZG	ON Semiconductor	MOSFET N-CH 600V 7.1A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock67,452	MOSFET (Metal Oxide)	600V	7.1A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	1107pF @ 25V	±30V	-	35W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
ZXMN3B04N8TA	Diodes Incorporated	MOSFET N-CH 30V 8.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock527,916	MOSFET (Metal Oxide)	30V	7.2A (Ta)	2.5V, 4.5V	700mV @ 250µA	23.1nC @ 4.5V	2480pF @ 15V	±12V	-	2W (Ta)	25 mOhm @ 7.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIS890ADN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 7.6A/24.7A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock2,265	MOSFET (Metal Oxide)	100 V	7.6A (Ta), 24.7A (Tc)	-	2.5V @ 250µA	29 nC @ 10 V	1330 pF @ 50 V	±20V	-	3.6W (Ta), 39W (Tc)	25.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IXFP72N20X3M	IXYS	MOSFET N-CH 200V 72A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock3	MOSFET (Metal Oxide)	200 V	72A (Tc)	10V	4.5V @ 1.5mA	55 nC @ 10 V	3780 pF @ 25 V	±20V	-	36W (Tc)	20mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
DMT64M8LSS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2664 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	13.6A (Ta)	4.5V, 10V	2.3V @ 250µA	47.5 nC @ 10 V	2664 pF @ 30 V	±20V	-	1.4W (Ta)	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
UPA2726UT1A-E2-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM4NB60CH-C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Stock67,248	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4.5V @ 250µA	14.5 nC @ 10 V	500 pF @ 25 V	±30V	-	50W (Tc)	2.5Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
RFH30N15	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-218 Isolated Package / Case: TO-218-3 Isolated Tab, TO-218AC	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	30A (Tc)	10V	4V @ 1mA	-	3000 pF @ 25 V	±20V	-	150W (Tc)	75mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-218 Isolated	TO-218-3 Isolated Tab, TO-218AC
SPP17N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock468	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	177 nC @ 10 V	2320 pF @ 25 V	±20V	-	208W (Tc)	290mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
TPIC2202KC	Texas Instruments	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT6012LFV-13	Diodes Incorporated	MOSFET N-CH 60V 43.3A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.95W (Ta), 33.78W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	43.3A (Tc)	4.5V, 10V	2.5V @ 250µA	22.2 nC @ 10 V	1522 pF @ 30 V	±20V	-	1.95W (Ta), 33.78W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
TQM300NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 6A/27A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock14,997	MOSFET (Metal Oxide)	60 V	6A (Ta), 27A (Tc)	7V, 10V	3.8V @ 250µA	20 nC @ 10 V	1009 pF @ 30 V	±20V	-	3.1W (Ta), 56W (Tc)	30mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PDFNU (5x6)	8-PowerTDFN