Page 5 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP12CN10NGXKSA1
Infineon Technologies

MOSFET N-CH 100V 67A TO-220

Package: TO-220-3

Stock2,832
EMH1405-TL-H
ON Semiconductor

MOSFET N-CH 30V 8.5A EMH8

Package: 8-SMD, Flat Lead

Stock7,936
MTD6N15T4G
ON Semiconductor

MOSFET N-CH 150V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock401,628
IXFH26N60Q
IXYS

MOSFET N-CH 600V 26A TO-247AD

Package: TO-247-3

Stock5,984
CSD17556Q5BT
Texas Instruments

N-CHANNEL NEXFET POWER MOSFET

Package: 8-PowerTDFN

Stock6,160
IRFZ34STRLPBF
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,560
SI3447CDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 7.8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock815,352
TK31V60W5,LVQ
Toshiba Semiconductor and Storage

MOSFET N -CH 600V 30.8A DFN

Package: 4-VSFN Exposed Pad

Stock19,758
SQJA84EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 46A SO8

Package: PowerPAK? SO-8

Stock23,340
RQ7E055ATTCR
Rohm Semiconductor

PCH -30V -5.5A MIDDLE POWER MOSF

Package: 8-SMD, Flat Lead

Stock23,358
BUK7M12-60EX
Nexperia USA Inc.

MOSFET N-CH 60V MLFPAK

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock15,252
BSC16DN25NS3 G
Infineon Technologies

MOSFET N-CH 250V 10.9A 8TDSON

Package: 8-PowerTDFN

Stock50,784
FDD5N60NZTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,480
CSD19536KTTT
Texas Instruments

MOSFET N-CH 100V 200A TO263

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock15,888
R6007KND3TL1
Rohm Semiconductor

NCH 600V 7A TO-252, HIGH-SPEED S

Package: -

Stock7,500
HAT1096C-EL-E
Renesas

HAT1096C - P-CHANNEL POWER MOSFE

Package: -

Request a Quote
PJMP099N60EC_T0_00601
Panjit International Inc.

600V/ 99M / 39A/ EASY TO DRIVER

Package: -

Request a Quote
IRFC024NB
Infineon Technologies

MOSFET 55V 17A DIE

Package: -

Request a Quote
DMNH6010SCTBQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TO263 T&R

Package: -

Request a Quote
HUF75344P3_NL
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP12CN10NGXKSA1	Infineon Technologies	MOSFET N-CH 100V 67A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,832	MOSFET (Metal Oxide)	100V	67A (Tc)	10V	4V @ 83µA	65nC @ 10V	4320pF @ 50V	±20V	-	125W (Tc)	12.9 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
EMH1405-TL-H	ON Semiconductor	MOSFET N-CH 30V 8.5A EMH8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock7,936	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4V, 10V	-	15nC @ 10V	820pF @ 10V	±20V	-	1.5W (Ta)	19 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	8-EMH	8-SMD, Flat Lead
MTD6N15T4G	ON Semiconductor	MOSFET N-CH 150V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock401,628	MOSFET (Metal Oxide)	150V	6A (Tc)	10V	4.5V @ 1mA	30nC @ 10V	1200pF @ 25V	±20V	-	1.25W (Ta), 20W (Tc)	300 mOhm @ 3A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH26N60Q	IXYS	MOSFET N-CH 600V 26A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,984	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	5100pF @ 25V	±20V	-	360W (Tc)	250 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
CSD17556Q5BT	Texas Instruments	N-CHANNEL NEXFET POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.65V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 191W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,160	MOSFET (Metal Oxide)	30V	100A (Ta)	4.5V, 10V	1.65V @ 250µA	39nC @ 4.5V	7020pF @ 15V	±20V	-	3.1W (Ta), 191W (Tc)	1.4 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
IRFZ34STRLPBF	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,560	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI3447CDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 7.8A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock815,352	MOSFET (Metal Oxide)	12V	7.8A (Tc)	1.8V, 4.5V	1V @ 250µA	30nC @ 8V	910pF @ 6V	±8V	-	2W (Ta), 3W (Tc)	36 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
TK31V60W5,LVQ	Toshiba Semiconductor and Storage	MOSFET N -CH 600V 30.8A DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	Package: 4-VSFN Exposed Pad	Stock19,758	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	4.5V @ 1.5mA	105nC @ 10V	3000pF @ 300V	±30V	-	240W (Tc)	109 mOhm @ 15.4A, 10V	150°C (TA)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
SQJA84EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 80V 46A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock23,340	MOSFET (Metal Oxide)	80V	46A (Tc)	4.5V, 10V	2.5V @ 250µA	35nC @ 10V	2100pF @ 25V	±20V	-	55W (Tc)	12.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
RQ7E055ATTCR	Rohm Semiconductor	PCH -30V -5.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock23,358	MOSFET (Metal Oxide)	30V	5.5A (Tc)	10V	2.5V @ 1mA	18.8nC @ 10V	860pF @ 15V	±20V	-	1.5W (Tc)	24.5 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
BUK7M12-60EX	Nexperia USA Inc.	MOSFET N-CH 60V MLFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 53A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock15,252	MOSFET (Metal Oxide)	60V	53A	10V	4V @ 1mA	24.8nC @ 10V	1625pF @ 25V	±20V	-	75W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
BSC16DN25NS3 G	Infineon Technologies	MOSFET N-CH 250V 10.9A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock50,784	MOSFET (Metal Oxide)	250V	10.9A (Tc)	10V	4V @ 32µA	11.4nC @ 10V	920pF @ 100V	±20V	-	62.5W (Tc)	165 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
FDD5N60NZTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,480	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	13nC @ 10V	600pF @ 25V	±25V	-	83W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD19536KTTT	Texas Instruments	MOSFET N-CH 100V 200A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock15,888	MOSFET (Metal Oxide)	100V	200A (Ta)	6V, 10V	3.2V @ 250µA	153nC @ 10V	12000pF @ 50V	±20V	-	375W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DDPAK/TO-263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
R6007KND3TL1	Rohm Semiconductor	NCH 600V 7A TO-252, HIGH-SPEED S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	5V @ 1mA	14.5 nC @ 10 V	470 pF @ 25 V	±20V	-	78W (Tc)	620mOhm @ 2.4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
HAT1096C-EL-E	Renesas	HAT1096C - P-CHANNEL POWER MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 790mW (Ta) Rds On (Max) @ Id, Vgs: 293mOhm @ 500µA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CMFPAK Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1A (Ta)	2.5V, 4.5V	1.4V @ 1mA	2 nC @ 4.5 V	155 pF @ 10 V	±12V	-	790mW (Ta)	293mOhm @ 500µA, 4.5V	150°C	Surface Mount	6-CMFPAK	6-SMD, Flat Leads
PJMP099N60EC_T0_00601	Panjit International Inc.	600V/ 99M / 39A/ EASY TO DRIVER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 308W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB-L Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	39A (Tc)	10V	4V @ 250µA	60 nC @ 10 V	2568 pF @ 400 V	±30V	-	308W (Tc)	99mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB-L	TO-220-3
IRFC024NB	Infineon Technologies	MOSFET 55V 17A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 17A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	17A	10V	-	-	-	-	-	-	75mOhm @ 17A, 10V	-	Surface Mount	Die	Die
DMNH6010SCTBQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TO263 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	133A (Tc)	10V	4V @ 1mA	46 nC @ 10 V	2692 pF @ 25 V	±20V	-	5W (Ta), 375W (Tc)	10mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
HUF75344P3_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	4V @ 250µA	210 nC @ 20 V	3200 pF @ 25 V	±20V	-	285W (Tc)	8mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
BUK964R2-55B-C	NXP	N-CHANNEL TRENCHMOS LOGIC LEVEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCD5N60TM-WS	onsemi	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock10,650	MOSFET (Metal Oxide)	600 V	4.6A (Tc)	10V	5V @ 250µA	16 nC @ 10 V	600 pF @ 25 V	±30V	-	54W (Tc)	950mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFS11N50A-GE3	Vishay Siliconix	MOSFET N-CH 500V 11A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	4V @ 250µA	52 nC @ 10 V	1423 pF @ 25 V	±30V	-	170W (Tc)	520mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TQM070NH04LCR-RLG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	16A (Ta), 54A (Tc)	4.5V, 10V	2.2V @ 250µA	34.5 nC @ 10 V	2169 pF @ 25 V	±16V	-	46.8W (Tc)	7mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
IRFB4020PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	4.9V @ 100µA	29 nC @ 10 V	1200 pF @ 50 V	±20V	-	100W (Tc)	100mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
G30N04D3	Goford Semiconductor	MOSFET N-CH 40V 30A DFN33-8L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 19.8W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.15x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock16,197	MOSFET (Metal Oxide)	40 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1780 pF @ 20 V	±20V	-	19.8W (Tc)	9.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3.15x3.05)	8-PowerVDFN
MCG40N03-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20.8W Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	40A	4.5V, 10V	2V @ 250µA	13 nC @ 10 V	722 pF @ 15 V	±20V	-	20.8W	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
AP3P090N-HF-ML	MOSLEADER	Single P -30V -3.1A SOT-23S FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-