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Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock559,200 |
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MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | ±16V | - | 1W (Ta) | 31 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 42A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock42,876 |
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MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 3535pF @ 15V | ±20V | - | 2.5W (Ta), 73.5W (Tc) | 3.9 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,160 |
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MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 5100pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 6.1 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 710mW (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock555,084 |
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MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 400pF @ 15V | ±20V | - | 710mW (Ta) | 72 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 85V 80A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock7,104 |
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MOSFET (Metal Oxide) | 85V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | ±20V | - | 230W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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ON Semiconductor |
MOSFET N-CH 60V 60A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 60V | 60A (Ta) | 5V | 2V @ 250µA | 65nC @ 5V | 3075pF @ 25V | ±15V | - | 2.4W (Ta), 150W (Tj) | 16 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88.2W (Tc)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,864 |
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MOSFET (Metal Oxide) | 60V | 27A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 88.2W (Tc) | 46 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 13.5A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock3,856 |
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MOSFET (Metal Oxide) | 600V | 13.5A (Tc) | 10V | 4.5V @ 100µA | 75nC @ 10V | 2220pF @ 25V | ±30V | - | 160W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,832 |
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MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,712 |
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MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | ±20V | - | 71W (Tc) | 9.4 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 15A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock3,952 |
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MOSFET (Metal Oxide) | 1200V | 15A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 14000pF @ 25V | ±30V | - | 320W (Tc) | 500 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,896 |
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MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 5V | 2V @ 250µA | 64nC @ 5V | 2200pF @ 25V | ±10V | - | 48W (Tc) | 77 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP-ADV
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 17A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,400 |
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MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 300V 0.085A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock20,160 |
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MOSFET (Metal Oxide) | 300V | 85mA (Tj) | 4.5V | 2.4V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 25 Ohm @ 120mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock17,760 |
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MOSFET (Metal Oxide) | 30V | 36A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 65nC @ 10V | 3290pF @ 15V | ±12V | - | 6.2W (Ta), 48W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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IXYS |
MOSFET N-CH 650V 12A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,344 |
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MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | ±30V | - | 180W (Tc) | 300 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,312 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | 680pF @ 25V | ±20V | - | 40W (Tc) | 9 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 13A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock11,064 |
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MOSFET (Metal Oxide) | 60V | 13A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 3420pF @ 30V | ±20V | - | 2.3W (Ta), 83W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,416 |
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MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock16,548 |
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MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | - | 1W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 25A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 216W (Tc)
- Rds On (Max) @ Id, Vgs: 126 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock72,000 |
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MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 3352pF @ 100V | ±30V | - | 216W (Tc) | 126 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 300V 38A TO-220PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5168pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 69 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock15,006 |
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MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 5V @ 250µA | 125nC @ 10V | 5168pF @ 50V | ±20V | - | 341W (Tc) | 69 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 200V 30A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock22,728 |
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MOSFET (Metal Oxide) | 200V | 30A (Tc) | 5V | 3V @ 250µA | 65nC @ 10V | 1990pF @ 25V | ±20V | - | 150W (Tc) | 75 mOhm @ 15A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 35A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock6,000 |
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MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 55 nC @ 10 V | 2711 pF @ 15 V | ±20V | - | 1W (Ta) | 18mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 530MA 3DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN0604-3
- Package / Case: 3-XFDFN
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Package: - |
Stock92,553 |
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MOSFET (Metal Oxide) | 20 V | 530mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.4 nC @ 4.5 V | 28.7 pF @ 15 V | ±8V | - | 820mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0604-3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
UMOS10 DPAK 80V 5.1MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock46,704 |
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MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 3.5V @ 700µA | 56 nC @ 10 V | 3980 pF @ 40 V | ±20V | - | 104W (Tc) | 5.1mOhm @ 42A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 74W
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA (TO-3)
- Package / Case: TO-204AA, TO-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 8.4A | - | - | - | - | - | - | 74W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204 nC @ 10 V | 10500 pF @ 20 V | +20V, -16V | - | 104W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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