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ON Semiconductor |
MOSFET P-CH 20V 2.2A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,918,620 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 10.3nC @ 4.5V | 940pF @ 10V | ±8V | - | 480mW (Ta) | 70 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 23A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,312 |
|
MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 1mA | - | 1210pF @ 25V | ±20V | - | 99W (Tc) | 75 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock17,412 |
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MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18nC @ 10V | 845pF @ 13V | ±20V | - | 39W (Tc) | 14 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 49A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 24.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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Package: SC-94 |
Stock6,408 |
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MOSFET (Metal Oxide) | 60V | 49A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | ±25V | - | 86W (Tc) | 16 mOhm @ 24.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PF | SC-94 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | - | 40W (Tc) | 5.8 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock124,464 |
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MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 270pF @ 25V | ±30V | - | 52W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 90V 0.01A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 10mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6.5pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 Ohm @ 5mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock6,160 |
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MOSFET (Metal Oxide) | 90V | 10mA (Ta) | 10V | 2.4V @ 100µA | - | 6.5pF @ 25V | ±20V | - | 625mW (Ta) | 250 Ohm @ 5mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 240V 0.16A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock2,416 |
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MOSFET (Metal Oxide) | 240V | 160mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | - | 16 Ohm @ 250mA, 10V | - | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Microsemi Corporation |
MOSFET N-CH 1000V 7A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,344 |
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MOSFET (Metal Oxide) | 1000V | 7A (Tc) | 10V | 5V @ 500µA | 58nC @ 10V | 1800pF @ 25V | ±30V | - | 290W (Tc) | 2 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 100V 76A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock12,252 |
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MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | 188W (Tc) | 13 mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock3,424 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta), 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 1150pF @ 15V | ±25V | - | 3.1W (Ta), 25W (Tc) | 7.5 mOhm @ 20A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerSMD, Flat Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11825pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 254W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,472 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 250µA | 243nC @ 10V | 11825pF @ 15V | ±20V | - | 254W (Tc) | 1.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 700V 12.8A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock20,136 |
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MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | ±16V | - | 30.5W (Tc) | 900 mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 27W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock6,144 |
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MOSFET (Metal Oxide) | 30V | 12.5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 1mA | 23nC @ 10V | 1385pF @ 15V | ±20V | - | 2.3W (Ta), 27W (Tc) | 9.3 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock27,600 |
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MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 3W (Ta), 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock110,892 |
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MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 2070pF @ 15V | +20V, -16V | - | 4.5W (Ta), 31W (Tc) | 4.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,922,408 |
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MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | ±12V | - | 540mW (Ta) | 250 mOhm @ 930mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
600V, 18A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150.6W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 250µA | 31 nC @ 10 V | 1273 pF @ 100 V | ±30V | - | 150.6W (Tc) | 190mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 30V 80A POWER MOSFET: RS1E35
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock7,200 |
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MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 185 nC @ 10 V | 7900 pF @ 15 V | ±20V | - | 3W (Ta), 35W (Tc) | 1.7mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Qorvo |
750V/23MO,SICFET,G4,TOLL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
SIC MOS D2PAK-7L 22MOHM 1200V
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 234W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,400 |
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SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 18V | 4.4V @ 20mA | 148 nC @ 18 V | 3200 pF @ 800 V | - | - | 234W (Tc) | 30mOhm @ 40A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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onsemi |
MOSFET N-CH 60V 54A/470A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 661µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Stock4,146 |
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MOSFET (Metal Oxide) | 60 V | 54A (Ta), 470A (Tc) | 6V, 10V | 4V @ 661µA | 170 nC @ 10 V | 13730 pF @ 30 V | ±20V | - | 4.2W (Ta), 314W (Tc) | 0.75mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock58,608 |
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MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Micro Commercial Co |
Interface
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333
- Package / Case: 8-VDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 35A | 4.5V, 10V | 2.5V @ 250µA | 46.7 nC @ 10 V | 1860 pF @ 20 V | ±20V | - | 40W | 8mOhm @ 20A, 10V | -55°C ~ 150°C | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 40A 8WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 40A (Ta) | - | - | 15 nC @ 4.5 V | 2200 pF @ 10 V | - | - | 45W (Tc) | 4.5mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 600V 28A PPAK 8 X 8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 174W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 5V @ 250µA | 53 nC @ 10 V | 1850 pF @ 100 V | ±30V | - | 174W (Tc) | 100mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Panjit International Inc. |
500V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 826 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 8A (Ta) | 10V | 4V @ 250µA | 16.2 nC @ 10 V | 826 pF @ 25 V | ±30V | - | 130W (Tc) | 900mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 30V LFPAK8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 315A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 131.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 50A (Ta), 315A (Tc) | 10V | 2.2V @ 200µA | 131.4 nC @ 10 V | 9550 pF @ 15 V | ±20V | - | 3.9W (Ta), 150W (Tc) | 0.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |