|
|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,496 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,440 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 6TSOT
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock4,208 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 8.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,132 |
|
MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 4.5V | 1100pF @ 15V | ±12V | - | 3.1W (Ta) | 24 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Microsemi Corporation |
MOSFET P-CH 100V 11A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA (TO-3)
- Package / Case: TO-204AA, TO-3
|
Package: TO-204AA, TO-3 |
Stock2,544 |
|
MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
|
|
NXP |
MOSFET N-CH 25V 33A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock6,288 |
|
MOSFET (Metal Oxide) | 25V | 33A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | ±20V | - | 26W (Tc) | 12.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 22W (Tc)
- Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON
- Package / Case: 8-VDFN Exposed Pad
|
Package: 8-VDFN Exposed Pad |
Stock3,584 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | ±20V | - | 700mW (Ta), 22W (Tc) | 16.9 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
|
|
ON Semiconductor |
MOSFET N-CH 25V 23A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37.5W (Tj)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,552 |
|
MOSFET (Metal Oxide) | 25V | 23A (Ta) | 4.5V, 10V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 37.5W (Tj) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
STMicroelectronics |
MOSFET N-CH 30V 12A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock933,288 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 2400pF @ 25V | ±16V | - | 2.5W (Ta) | 9 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Infineon Technologies |
MOSFET N-CH TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 345µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,872 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 345µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock3,312 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 1600pF @ 15V | ±20V | - | 42W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock69,000 |
|
MOSFET (Metal Oxide) | 20V | 7A (Ta) | 1.8V, 4.5V | - | 8.4nC @ 4.5V | 660pF @ 10V | ±12V | - | 1.5W (Ta) | 24 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
|
|
ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,544 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 1W (Ta) | 156 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
STMicroelectronics |
MOSFET N-CH 950V 12A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,112 |
|
MOSFET (Metal Oxide) | 950V | 12A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 900pF @ 100V | ±30V | - | 170W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock3,120 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 5600pF @ 25V | ±20V | - | 188W (Tc) | 1.1 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | - | 79W (Tc) | 8.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,027,488 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 67nC @ 10V | 2525pF @ 15V | ±20V | - | 2.5W (Ta) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 20V 200MA SC89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
|
Package: SC-89, SOT-490 |
Stock463,188 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 300mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
|
|
STMicroelectronics |
MOSFET N-CH 800V 9A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock4,464 |
|
MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 5V @ 100µA | 22nC @ 10V | 635pF @ 100V | ±30V | - | 30W (Tc) | 600 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Nexperia USA Inc. |
PSMN2R0-55YLH/SOT1023/4 LEADS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11353 pF @ 27 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Ta)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
|
Package: - |
Stock57,702 |
|
MOSFET (Metal Oxide) | 55 V | 200A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 184 nC @ 10 V | 11353 pF @ 27 V | ±20V | - | 333W (Ta) | 2.1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
|
|
STMicroelectronics |
HIP247 IN LINE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
|
Package: - |
Stock1,707 |
|
SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 3.5V @ 1mA | 13.3 nC @ 20 V | 133 pF @ 1000 V | +22V, -10V | - | 96W (Tc) | 1.3Ohm @ 3A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
|
|
onsemi |
MOSFET N-CH 60V 9.9A/50A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock9,813 |
|
MOSFET (Metal Oxide) | 60 V | 9.9A (Ta), 50A (Tc) | 6V, 10V | 4V @ 250µA | 29 nC @ 10 V | 1350 pF @ 25 V | ±20V | - | 115W (Tc) | 13.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Nuvoton Technology Corporation |
SINGLE NCH MOSFET 12V, 3.4A, 27M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 236µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-CSP (0.8x0.8)
- Package / Case: 4-XFLGA, CSP
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 236µA | 5.8 nC @ 4.5 V | 275 pF @ 10 V | ±8V | - | 360mW (Ta) | 30mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | 4-CSP (0.8x0.8) | 4-XFLGA, CSP |
|
|
Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 760µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock3,063 |
|
MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 4.5V @ 760µA | 67 nC @ 10 V | 2721 pF @ 400 V | ±20V | - | 156W (Tc) | 70mOhm @ 15.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
Vishay Siliconix |
N-CHANNEL 20-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.2A (Ta), 7.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18 nC @ 8 V | 666 pF @ 10 V | ±8V | - | 1.7W (Ta), 2.7W (Tc) | 28mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
Toshiba Semiconductor and Storage |
650V DTMOS6 HSD 42MOHM TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: - |
Stock630 |
|
MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | 6280 pF @ 300 V | ±30V | - | 360W (Tc) | 42mOhm @ 27.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
|
|
Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tj)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 17A (Tc) | 10V | 4.9V @ 50µA | 20 nC @ 10 V | 800 pF @ 50 V | ±20V | - | 80W (Tj) | 95mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
ANBON SEMICONDUCTOR (INT'L) LIMITED |
N-CHANNEL SILICON CARBIDE POWER
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: - |
Stock150 |
|
SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 4V @ 10mA | 142 nC @ 20 V | 2946 pF @ 1000 V | +25V, -10V | - | 330W (Tc) | 55mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |