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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,109,232 |
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MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | ±20V | - | 80W (Tc) | 130 mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 3.4A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock457,188 |
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MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | - | ±20V | - | 1.14W (Ta) | 60 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 25V 9.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock30,036 |
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MOSFET (Metal Oxide) | 25V | 9.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 5V | 1400pF @ 20V | ±20V | - | 1.3W (Ta), 50W (Tc) | 8.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 26A PLUS220-SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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Package: PLUS-220SMD |
Stock6,384 |
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MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 5.5V @ 250µA | 65nC @ 10V | 3600pF @ 25V | ±30V | - | 460W (Tc) | 230 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 31A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock58,644 |
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MOSFET (Metal Oxide) | 60V | 31A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | ±25V | - | 47W (Tc) | 22 mOhm @ 15.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,928 |
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MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 25pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,688 |
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MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 3.7W (Ta), 60W (Tc) | 270 mOhm @ 5.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock37,332 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | ±20V | - | 2.5W (Ta) | 13.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Sanken |
MOSFET N-CH 250V 50A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3 Full Pack
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Package: TO-3P-3 Full Pack |
Stock6,780 |
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MOSFET (Metal Oxide) | 250V | 50A (Ta) | 10V | 4.5V @ 1mA | - | 3800pF @ 25V | ±30V | - | 85W (Tc) | 43 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 70A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock6,176 |
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MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 5V @ 250µA | 86nC @ 10V | 3970pF @ 25V | ±30V | - | 417W (Tc) | 35 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 36A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,768 |
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MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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Package: 8-WFDFN Exposed Pad |
Stock28,740 |
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MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | - | 21.2nC @ 4.5V | 3850pF @ 10V | ±20V | - | 40W (Tc) | 2.8 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 200V 140A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 140A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: ISOTOP
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Package: ISOTOP |
Stock3,904 |
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MOSFET (Metal Oxide) | 200V | 140A | 10V | 4V @ 250µA | 338nC @ 10V | 11100pF @ 25V | ±20V | - | 500W (Tc) | 12 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock8,172 |
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MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 60W (Tc) | 1.05 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 20V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock397,968 |
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MOSFET (Metal Oxide) | 20V | 8.3A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 18.9nC @ 4.5V | 1900pF @ 10V | ±12V | - | 1.56W (Ta) | 20 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 26.5A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,200 |
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MOSFET (Metal Oxide) | 30V | 26.5A (Ta), 207A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 84nC @ 10V | 6000pF @ 15V | ±20V | - | 1.5W (Ta) | 1.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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EPC |
TRANS GAN 100V 1A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
Package: Die |
Stock5,327,856 |
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GaNFET (Gallium Nitride) | 100V | 1A (Ta) | 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | +6V, -4V | - | - | 65 mOhm @ 1A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET N-CH 60V 45.6A/2.4A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
|
Package: - |
Stock46,914 |
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MOSFET (Metal Oxide) | 60 V | 45.6A (Ta), 2.4A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135 nC @ 10 V | 5900 pF @ 30 V | ±20V | - | 6.25W (Ta), 125W (Tc) | 1.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 780mW (Tj)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 280mA (Ta) | 4.5V, 10V | 2.8V @ 250µA | 2 nC @ 10 V | 60 pF @ 25 V | ±20V | - | 780mW (Tj) | 6Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 40V 50A/300A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6985 pF @ 25 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.3W (Ta), 159.6W (Tc)
- Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 50A (Ta), 300A (Tc) | 10V | 4V @ 250µA | 108 nC @ 10 V | 6985 pF @ 25 V | +20V, -16V | - | 4.3W (Ta), 159.6W (Tc) | 0.95mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Micro Commercial Co |
MOSFET N-CH 60VDS 20VGS 20A 4.1N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 20A | 10V | 3V @ 250µA | 12 nC @ 10 V | 500 pF @ 30 V | ±20V | - | - | 45mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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UMW |
30V 2.6A 130MR@10V,2.6A 1.4W 3V@
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock8,970 |
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MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 9 nC @ 10 V | 370 pF @ 15 V | ±20V | - | 1.4W (Ta) | 130mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Comchip Technology |
MOSFET N-CH 40V 70A DFN5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 72.3W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5x6 (PR-PAK)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19.7 nC @ 10 V | 1278 pF @ 25 V | ±20V | - | 2W (Ta), 72.3W (Tc) | 8.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5x6 (PR-PAK) | 8-PowerTDFN |
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EPC Space, LLC |
GAN FET HEMT 200V 80A 5UB
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
- Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-SMD
- Package / Case: 5-SMD, No Lead
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Package: - |
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GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 2.5V @ 7mA | 13.5 nC @ 100 V | 1313 pF @ 100 V | +6V, -4V | - | - | 14.5mOhm @ 30A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 5-SMD | 5-SMD, No Lead |
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UMW |
TO-252 N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,407 |
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MOSFET (Metal Oxide) | 600 V | 1A (Tj) | 10V | 4V @ 250µA | 4.8 nC @ 10 V | 150 pF @ 25 V | ±30V | - | - | 11Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SIC_DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-14
- Package / Case: TO-247-4
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Package: - |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 22A (Tc) | 18V, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | 458 pF @ 800 V | +23V, -5V | - | 133W (Tc) | 150mOhm @ 7A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
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STMicroelectronics |
SICFET N-CH 1200V 20A H2PAK-2
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 3.5V @ 1mA | 45 nC @ 20 V | 650 pF @ 400 V | +25V, -10V | - | 175W (Tc) | 290mOhm @ 10A, 20V | -55°C ~ 200°C (TJ) | Surface Mount | H2PAK-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 30V 6A TO236AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock9,981 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 18.6 nC @ 4.5 V | 1150 pF @ 15 V | ±8V | - | 610mW (Ta), 8.3W (Tc) | 24mOhm @ 6A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |