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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 12A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,080 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1954pF @ 100V | ±30V | - | 50W (Tc) | 520 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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|
EPC |
TRANS GAN 100V 25A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
Package: Die |
Stock2,288 |
|
GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | +6V, -5V | - | - | 7 mOhm @ 25A, 5V | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
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Renesas Electronics America |
MOSFET N-CH 55V 100A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 50A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,688 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 3.25 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 280V 80A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 280V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock18,204 |
|
MOSFET (Metal Oxide) | 280V | 80A (Tc) | 10V | 5V @ 1mA | 115nC @ 10V | 5000pF @ 25V | ±30V | - | 500W (Tc) | 49 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 100V DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock452,388 |
|
MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 300V 35A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock11,148 |
|
MOSFET (Metal Oxide) | 300V | 35A (Tc) | 10V | 4V @ 4mA | 200nC @ 10V | 4800pF @ 25V | ±20V | - | 300W (Tc) | 100 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH TO263-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock3,568 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock5,536 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock62,100 |
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MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | ±20V | - | 3.8W (Ta), 130W (Tc) | 14 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
IXYS |
MOSFET N-CH 600V 47A I4-PAC-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
|
Package: i4-Pac?-5 |
Stock4,768 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | ±20V | - | - | 45 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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IXYS |
MOSFET N-CH 60V 200A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 714W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 400A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock4,848 |
|
MOSFET (Metal Oxide) | 60V | 200A (Tc) | 10V | 5V @ 250µA | 200nC @ 10V | 5400pF @ 25V | ±20V | - | 714W (Tc) | 5 mOhm @ 400A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
Nexperia USA Inc. |
MOSFET P-CH 20V 3.2A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
|
Package: SC-74, SOT-457 |
Stock3,744 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 7.8nC @ 4.5V | 602pF @ 10V | ±12V | - | 500mW (Ta), 6.25W (Tc) | 85 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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IXYS |
MOSFET P-CH 65V 28A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,664 |
|
MOSFET (Metal Oxide) | 65V | 28A (Tc) | 10V | 4.5V @ 250µA | 46nC @ 10V | 2030pF @ 25V | ±15V | - | 83W (Tc) | 45 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 950V 9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,960 |
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MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 450pF @ 100V | ±30V | - | 90W (Tc) | 1.25 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 24A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,432 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 250µA | 43nC @ 10V | 1870pF @ 100V | ±25V | - | 190W (Tc) | 130 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 1.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,272 |
|
MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | - | - | 27nC @ 5V | 645pF @ 25V | ±20V | Depletion Mode | 100W (Tc) | 10 Ohm @ 800mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 24A PT8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6), Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock326,928 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 47nC @ 10V | 3000pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 2.8 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
|
|
STMicroelectronics |
MOSFET N-CH 950V 7.2A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock14,820 |
|
MOSFET (Metal Oxide) | 950V | 7.2A (Tc) | 10V | 5V @ 100µA | 34nC @ 10V | 1031pF @ 100V | ±30V | - | 150W (Tc) | 1.35 Ohm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 650V 32.4A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 313W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock17,748 |
|
MOSFET (Metal Oxide) | 650V | 32.4A (Tc) | 10V | 4V @ 250µA | 173nC @ 10V | 4040pF @ 100V | ±30V | - | 313W (Tc) | 105 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock30,900 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 250µA | 18nC @ 10V | 615pF @ 25V | ±30V | - | 104W (Tc) | 2.2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Transphorm |
650 V 35 A GAN FET HIGH VOLTAGE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,296 |
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GaNFET (Gallium Nitride) | 650 V | 35A (Tc) | 10V | 4.8V @ 700µA | 24 nC @ 10 V | 1000 pF @ 400 V | ±20V | - | 132W (Tc) | 60mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V SOT323
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 290mW (Ta)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 380mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 4.5 V | 19 pF @ 15 V | ±20V | - | 290mW (Ta) | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Panjit International Inc. |
900V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 900 V | 6A (Ta) | 10V | 4V @ 250µA | 23.6 nC @ 10 V | 915 pF @ 25 V | ±30V | - | 56W (Tc) | 2.3Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 163µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TTFN-9-U02
- Package / Case: 9-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 3.3V @ 163µA | 150 nC @ 10 V | 12000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN
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Package: - |
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- | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Harris Corporation |
N-CHANNEL, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 5V | 2V @ 1mA | - | 2000 pF @ 25 V | ±10V | - | 75W (Tc) | 85mOhm @ 12.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Diodes Incorporated |
MOSFET P-CH 30V 11A PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock51,021 |
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MOSFET (Metal Oxide) | 30 V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 51 nC @ 10 V | 2147 pF @ 15 V | ±25V | - | 1W (Ta) | 12mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |