Page 388 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF1404ZGPBF
Infineon Technologies

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock4,656
BSP296E6327
Infineon Technologies

MOSFET N-CH 100V 1.1A SOT223

Package: TO-261-4, TO-261AA

Stock4,176
IRF7807D2TR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock46,200
AON6426
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 14A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock183,876
IRF840B
Fairchild/ON Semiconductor

MOSFET N-CH 500V 8A TO-220

Package: TO-220-3

Stock109,968
HUF75321D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,000
STB200NF04L
STMicroelectronics

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,504
IRFSL5615PBF
Infineon Technologies

MOSFET N-CH 150V 33A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,392
IRFU7740PBF
Infineon Technologies

MOSFET N CH 75V 87A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,928
IPD50R2K0CEAUMA1
Infineon Technologies

MOSFET N-CH 500V 2.4A PG-TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,856
IXTQ96N20P
IXYS

MOSFET N-CH 200V 96A TO-3P

Package: TO-3P-3, SC-65-3

Stock433,524
C3M0075120J
Cree/Wolfspeed

1200V, 75 MOHM, G3 SIC MOSFET

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock2,576
STP20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-220

Package: TO-220-3

Stock2,304
IXFA8N85XHV
IXYS

MOSFET N-CH 850V 8A TO263HV

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
IPB65R190CFD
Infineon Technologies

MOSFET N-CH 650V 17.5A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,960
FQP7N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.6A TO-220

Package: TO-220-3

Stock103,464
RVQ040N05TR
Rohm Semiconductor

MOSFET N-CH 45V 4A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock475,092
IXFH6N100
IXYS

MOSFET N-CH 1KV 6A TO-247AD

Package: TO-247-3

Stock6,256
AOB29S50L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 29A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,008
CSD16556Q5B
Texas Instruments

MOSFET N-CH 25V 100A 8VSON

Package: 8-PowerTDFN

Stock43,848

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1404ZGPBF	Infineon Technologies	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,656	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	150nC @ 10V	4340pF @ 25V	±20V	-	220W (Tc)	3.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSP296E6327	Infineon Technologies	MOSFET N-CH 100V 1.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,176	MOSFET (Metal Oxide)	100V	1.1A (Ta)	4.5V, 10V	1.8V @ 400µA	17.2nC @ 10V	364pF @ 25V	±20V	-	1.79W (Ta)	700 mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRF7807D2TR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock46,200	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	17nC @ 5V	-	±12V	Schottky Diode (Isolated)	2.5W (Tc)	25 mOhm @ 7A, 4.5V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AON6426	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 14A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock183,876	MOSFET (Metal Oxide)	30V	14A (Ta), 65A (Tc)	4.5V, 10V	2.5V @ 250µA	45nC @ 10V	2300pF @ 15V	±20V	-	2W (Ta), 42W (Tc)	5.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IRF840B	Fairchild/ON Semiconductor	MOSFET N-CH 500V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock109,968	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	53nC @ 10V	1800pF @ 25V	±30V	-	134W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUF75321D3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,000	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	36 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
STB200NF04L	STMicroelectronics	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,504	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	4V @ 250µA	90nC @ 4.5V	6400pF @ 25V	±16V	-	300W (Tc)	3.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFSL5615PBF	Infineon Technologies	MOSFET N-CH 150V 33A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,392	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5V @ 100µA	40nC @ 10V	1750pF @ 50V	±20V	-	144W (Tc)	42 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFU7740PBF	Infineon Technologies	MOSFET N CH 75V 87A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,928	MOSFET (Metal Oxide)	75V	87A (Tc)	6V, 10V	3.7V @ 100µA	126nC @ 10V	4430pF @ 25V	±20V	-	140W (Tc)	7.2 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IPD50R2K0CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,856	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	33W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTQ96N20P	IXYS	MOSFET N-CH 200V 96A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock433,524	MOSFET (Metal Oxide)	200V	96A (Tc)	10V	5V @ 250µA	145nC @ 10V	4800pF @ 25V	±20V	-	600W (Tc)	24 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
C3M0075120J	Cree/Wolfspeed	1200V, 75 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock2,576	SiC (Silicon Carbide Junction Transistor)	1200V	30A (Tc)	15V	4V @ 5mA	51nC @ 15V	1350pF @ 1000V	+19V, -8V	-	113.6W (Tc)	90 mOhm @ 20A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
STP20N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,304	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	-	250W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFA8N85XHV	IXYS	MOSFET N-CH 850V 8A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	850V	8A (Tc)	10V	5.5V @ 250µA	17nC @ 10V	654pF @ 25V	±30V	-	200W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R190CFD	Infineon Technologies	MOSFET N-CH 650V 17.5A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,960	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	4.5V @ 730µA	68nC @ 10V	1850pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP7N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 6.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	200V	6.6A (Tc)	10V	5V @ 250µA	10nC @ 10V	400pF @ 25V	±30V	-	63W (Tc)	690 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
RVQ040N05TR	Rohm Semiconductor	MOSFET N-CH 45V 4A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Vgs (Max): 21V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock475,092	MOSFET (Metal Oxide)	45V	4A (Ta)	4V, 10V	2.5V @ 1mA	8.8nC @ 5V	530pF @ 10V	21V	-	600mW (Ta)	53 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
IXFH6N100	IXYS	MOSFET N-CH 1KV 6A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,256	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	4.5V @ 2.5mA	130nC @ 10V	2600pF @ 25V	±20V	-	180W (Tc)	2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
AOB29S50L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 29A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1312pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,008	MOSFET (Metal Oxide)	500V	29A (Tc)	10V	3.9V @ 250µA	26.6nC @ 10V	1312pF @ 100V	±30V	-	357W (Tc)	150 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CSD16556Q5B	Texas Instruments	MOSFET N-CH 25V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 191W (Tc) Rds On (Max) @ Id, Vgs: 1.07 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock43,848	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.7V @ 250µA	47nC @ 4.5V	6180pF @ 15V	±20V	-	3.2W (Ta), 191W (Tc)	1.07 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
TP2104N3-G	Microchip Technology	MOSFET P-CH 40V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,216	MOSFET (Metal Oxide)	40V	175mA (Tj)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	740mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
RSJ301N10FRATL	Rohm Semiconductor	MOSFET N-CH 100V 30A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,150	MOSFET (Metal Oxide)	100 V	30A (Ta)	4V, 10V	2.5V @ 1mA	60 nC @ 10 V	2100 pF @ 25 V	±20V	-	50W (Ta)	46mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ISP12DP06NMXTSA1	Infineon Technologies	MOSFET P-CH 60V 2.8A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: -	Stock4,914	MOSFET (Metal Oxide)	60 V	2.8A (Ta)	10V	4V @ 520µA	20.2 nC @ 10 V	790 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	125mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRLML6344TRPBF-ML	MOSLEADER	N 30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIR626LDP-T1-RE3	Vishay Siliconix	MOSFET N-CH 60V 45.6A/186A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock11,253	MOSFET (Metal Oxide)	60 V	45.6A (Ta), 186A (Tc)	4.5V, 10V	2.5V @ 250µA	135 nC @ 10 V	5900 pF @ 30 V	±20V	-	6.25W (Ta), 104W (Tc)	1.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIDR402EP-T1-RE3	Vishay Siliconix	N-CHANNEL 40 V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	65.2A (Ta), 291A (Tc)	4.5V, 10V	2.3V @ 250µA	165 nC @ 10 V	9100 pF @ 20 V	+20V, -16V	-	7.5W (Ta), 150W (Tc)	0.88mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
AUIRFSL8408	Infineon Technologies	MOSFET N-CH 40V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	195A (Tc)	-	3.9V @ 250µA	324 nC @ 10 V	10820 pF @ 25 V	-	-	294W (Tc)	1.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
APT8065SVRG	Microchip Technology	MOSFET N-CH 800V 13A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	13A (Tc)	-	4V @ 1mA	225 nC @ 10 V	3700 pF @ 25 V	-	-	-	650mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA