Page 390 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUK761R3-30E,118
NXP

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,568
HUF75309T3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 3A SOT-223

Package: TO-261-4, TO-261AA

Stock39,120
IPW60R099P7XKSA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Stock7,184
IPP65R095C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

Package: TO-220-3

Stock5,440
DMG4N60SJ3
Diodes Incorporated

MOSFET NCH 600V 3A TO251

Package: TO-251-3 Long Leads, IPak, TO-251AB

Stock5,680
NVC6S5A354PLZT1G
ON Semiconductor

MOSFET P-CH 60V CPH6

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,048
MCH3382-TL-W
ON Semiconductor

MOSFET P-CH 12V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock2,832
DMN1045UFR4-7
Diodes Incorporated

MOSFET N-CH 12V 3.2A DFN1010-3

Package: 3-XFDFN

Stock3,264
TPH5200FNH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 26A SOP8

Package: 8-PowerVDFN

Stock4,352
STP10NK70ZFP
STMicroelectronics

MOSFET N-CH 700V 8.6A TO-220FP

Package: TO-220-3 Full Pack

Stock197,028
IRF840ASTRRPBF
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,164
IRFU420PBF
Vishay Siliconix

MOSFET N-CH 500V 2.4A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock263,676
IRFH7004TRPBF
Infineon Technologies

MOSFET N CH 40V 100A PQFN 5X6

Package: 8-VQFN Exposed Pad

Stock57,132
PXP018-20QXJ
Nexperia USA Inc.

PXP018-20QX/SOT8002/MLPAK33

Package: -

Stock30,237
MMFTN20
Diotec Semiconductor

MOSFET SOT23 N 50V 15OHM 150C

Package: -

Request a Quote
SIHA18N60E-GE3
Vishay Siliconix

N-CHANNEL 600V

Package: -

Stock2,958
NTMFS6H800NT1G
onsemi

MOSFET N-CH 80V 28A/203A 5DFN

Package: -

Stock4,455
JANSR2N7262U
Microsemi Corporation

MOSFET N-CH 200V 5.5A 18ULCC

Package: -

Request a Quote
DMN5L06KQ-7
Diodes Incorporated

MOSFET N-CH 50V 300MA SOT23

Package: -

Request a Quote
FDB3632-F085
onsemi

MOSFET N-CH 100V 12A TO263AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK761R3-30E,118	NXP	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,568	MOSFET (Metal Oxide)	30V	120A (Tc)	10V	4V @ 1mA	154nC @ 10V	11960pF @ 25V	±20V	-	357W (Tc)	1.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75309T3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 352pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock39,120	MOSFET (Metal Oxide)	55V	3A (Ta)	10V	4V @ 250µA	23nC @ 20V	352pF @ 25V	±20V	-	1.1W (Ta)	70 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IPW60R099P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,184	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,440	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	128W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
DMG4N60SJ3	Diodes Incorporated	MOSFET NCH 600V 3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Long Leads, IPak, TO-251AB	Package: TO-251-3 Long Leads, IPak, TO-251AB	Stock5,680	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	4.5V @ 250µA	14.3nC @ 10V	532pF @ 25V	±30V	-	41W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Long Leads, IPak, TO-251AB
NVC6S5A354PLZT1G	ON Semiconductor	MOSFET P-CH 60V CPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,048	MOSFET (Metal Oxide)	60V	4A (Ta)	4V, 10V	2.6V @ 1mA	14nC @ 10V	600pF @ 20V	±20V	-	1.9W (Ta)	100 mOhm @ 2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
MCH3382-TL-W	ON Semiconductor	MOSFET P-CH 12V 2A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 6V Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock2,832	MOSFET (Metal Oxide)	12V	2A (Ta)	1.8V, 4.5V	900mV @ 1mA	2.3nC @ 4.5V	170pF @ 6V	±9V	-	800mW (Ta)	198 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
DMN1045UFR4-7	Diodes Incorporated	MOSFET N-CH 12V 3.2A DFN1010-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1010-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock3,264	MOSFET (Metal Oxide)	12V	3.2A (Ta)	1.5V, 4.5V	1V @ 250µA	4.8nC @ 4.5V	375pF @ 10V	±8V	-	500mW (Ta)	45 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1010-3	3-XFDFN
TPH5200FNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 26A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,352	MOSFET (Metal Oxide)	250V	26A (Tc)	10V	4V @ 1mA	22nC @ 10V	2200pF @ 100V	±20V	-	78W (Tc)	52 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
STP10NK70ZFP	STMicroelectronics	MOSFET N-CH 700V 8.6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock197,028	MOSFET (Metal Oxide)	700V	8.6A (Tc)	10V	4.5V @ 100µA	90nC @ 10V	2000pF @ 25V	±30V	-	35W (Tc)	850 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRF840ASTRRPBF	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,164	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	38nC @ 10V	1018pF @ 25V	±30V	-	125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU420PBF	Vishay Siliconix	MOSFET N-CH 500V 2.4A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock263,676	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	4V @ 250µA	19nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	3 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFH7004TRPBF	Infineon Technologies	MOSFET N CH 40V 100A PQFN 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6419pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	Package: 8-VQFN Exposed Pad	Stock57,132	MOSFET (Metal Oxide)	40V	100A (Tc)	6V, 10V	3.9V @ 150µA	194nC @ 10V	6419pF @ 25V	±20V	-	156W (Tc)	1.4 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-VQFN Exposed Pad
PXP018-20QXJ	Nexperia USA Inc.	PXP018-20QX/SOT8002/MLPAK33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 39.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2.36 nF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock30,237	MOSFET (Metal Oxide)	20 V	8.4A (Ta), 39.7A (Tc)	2.5V, 4.5V	1.25V @ 250µA	34.8 nC @ 4.5 V	2.36 nF @ 10 V	±12V	-	1.8W (Ta), 50W (Tc)	18mOhm @ 8.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
MMFTN20	Diotec Semiconductor	MOSFET SOT23 N 50V 15OHM 150C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	100mA (Ta)	2.5V, 10V	1.8V @ 1mA	-	15 pF @ 10 V	±20V	-	300mW (Ta)	15Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIHA18N60E-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock2,958	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4V @ 250µA	92 nC @ 10 V	1640 pF @ 100 V	±30V	-	34W (Tc)	202mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
NTMFS6H800NT1G	onsemi	MOSFET N-CH 80V 28A/203A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 330µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,455	MOSFET (Metal Oxide)	80 V	28A (Ta), 203A (Tc)	6V, 10V	4V @ 330µA	85 nC @ 10 V	5530 pF @ 40 V	±20V	-	3.8W (Ta), 200W (Tc)	2.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
JANSR2N7262U	Microsemi Corporation	MOSFET N-CH 200V 5.5A 18ULCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.5A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	-	±20V	-	25W (Tc)	364mOhm @ 5.5A, 12V	-55°C ~ 150°C	Surface Mount	18-ULCC (9.14x7.49)	18-CLCC
DMN5L06KQ-7	Diodes Incorporated	MOSFET N-CH 50V 300MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	300mA (Ta)	1.8V, 5V	1V @ 250µA	-	50 pF @ 25 V	±20V	-	350mW	2Ohm @ 50mA, 5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDB3632-F085	onsemi	MOSFET N-CH 100V 12A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	12A (Ta)	10V	4V @ 250µA	110 nC @ 10 V	6000 pF @ 25 V	±20V	-	310W (Tc)	9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TPH1R204PB-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 150A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock92,856	MOSFET (Metal Oxide)	40 V	150A (Tc)	6V, 10V	3V @ 500µA	62 nC @ 10 V	5855 pF @ 20 V	±20V	-	960mW (Ta), 132W (Tc)	1.2mOhm @ 50A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
STW45N60DM6	STMicroelectronics	MOSFET N-CH 600V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	4.75V @ 250µA	44 nC @ 10 V	1920 pF @ 100 V	±25V	-	210W (Tc)	99mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
MCB70N10YB-TP	Micro Commercial Co	MOSFET N-CH D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,986	MOSFET (Metal Oxide)	100 V	70A (Tc)	6V, 10V	4V @ 250µA	32 nC @ 10 V	2270 pF @ 50 V	±20V	-	125W (Tj)	8.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMNR60-25YLHX	Nexperia USA Inc.	MOSFET N-CH 25V 300A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 300A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8117 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 268W (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock12,045	MOSFET (Metal Oxide)	-	300A (Ta)	4.5V, 10V	2.2V @ 2mA	147 nC @ 10 V	8117 pF @ 12 V	±20V	-	268W (Ta)	700mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NTP067N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 3.9mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 266W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock768	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	4V @ 3.9mA	80 nC @ 10 V	3750 pF @ 400 V	±30V	-	266W (Tc)	67mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDD6682_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Ta)	4.5V, 10V	3V @ 250µA	31 nC @ 5 V	2400 pF @ 15 V	±20V	-	1.6W (Ta)	6.2mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDS9435ANBAD008	onsemi	MOSFET P-CH 30V 5.3A 8-SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	5.3A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
FQD9N25TM-F080	onsemi	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	7.4A (Tc)	10V	5V @ 250µA	20 nC @ 10 V	700 pF @ 25 V	±30V	-	2.5W (Ta), 55W (Tc)	420mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63